JPH05109940A - 混成集積回路 - Google Patents

混成集積回路

Info

Publication number
JPH05109940A
JPH05109940A JP27264691A JP27264691A JPH05109940A JP H05109940 A JPH05109940 A JP H05109940A JP 27264691 A JP27264691 A JP 27264691A JP 27264691 A JP27264691 A JP 27264691A JP H05109940 A JPH05109940 A JP H05109940A
Authority
JP
Japan
Prior art keywords
wire
conductive path
heat sink
power
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27264691A
Other languages
English (en)
Other versions
JP3048707B2 (ja
Inventor
Shinichi Toyooka
伸一 豊岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP27264691A priority Critical patent/JP3048707B2/ja
Publication of JPH05109940A publication Critical patent/JPH05109940A/ja
Application granted granted Critical
Publication of JP3048707B2 publication Critical patent/JP3048707B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Abstract

(57)【要約】 【目的】 パワー回路と小信号回路とが１チップ化され
たパワーモノ型半導体素子をヒートシンクを介して基板
上に実装する。 【構成】 基板（１）上に形成された導電路（３）上に
ヒートシンク（４）を固着し、そのヒートシンク（４）
上に中継基板（６）を設けて、半導体素子（５）の小信
号回路用の細いＡｌワイヤ線（７Ｂ）を中継基板（６）
を介して導電路（３）と接続する。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は混成集積回路、特にパワ
ー部と小信号部とを集積化したパワーモノＩＣを搭載し
た混成集積回路に関する。
【０００２】
【従来の技術】従来、パワー系の半導体素子を搭載した
混成集積回路は図３に示す如く、セラミックスあるいは
表面を陽極酸化したアルミニウム等の絶縁基板（１１）
と、前記基板（１１）上に任意の形状に設けられた導電
路（１２）と、前記導電路（１２）上に半田付けされた
ヒートシンク（１３）とそのヒートシンク（１３）上に
固着されたパワートランジスタ等のパワー系の素子（１
４）と、そのパワー素子（１４）と周辺の導電路（１
２）とを接続するボンディングワイヤ線（１５）とで構
成され、所望出力の混成集積回路が実現されている。
【０００３】このような混成集積回路のヒートシンク上
に搭載されるパワー素子は、パワー段のみを構成する回
路が集積化されており、そのパワー素子を駆動させるド
ライバー用の小信号系の駆動用の回路素子は図３では示
されてないがパワー素子の近傍の導電路上に接続され両
者が接続される。
【０００４】
【発明が解決しようとする課題】従って、従来の混成集
積回路ではパワー素子とそのパワー素子を駆動させる小
信号素子とが夫々別に搭載されているため約１０Ａ以上
の大出力を有するパワー用の混成集積回路が実現でき
る。最近、パワー部とそのパワー部を駆動させる小信号
部とが１チップ化された（例えば高耐圧用のＭＯＳＦＥ
Ｔ等）ＬＳＩ素子が出現している。かかる素子のパワー
出力は前述した従来の混成集積回路の如き、大出力では
なく約１〜１０Ａ位の大きさの出力である。
【０００５】しかしながら、放熱性を考慮するとヒート
シンクの厚みは最低でも２．５〜３ｍｍ位の厚みが必要
であり、パワー部の電極と導電路とを接続する約２００
μ径の太いＡｌワイヤ線はボンディング接続できるもの
の、小信号部の電極と導電路とを接続する約４０μ径の
細いＡｌワイヤ線はボンディング接続が行えず、パワー
部と小信号部とを備えた、いわゆるパワーモノＩＣを従
来の混成集積回路では実装することができなかった。
【０００６】
【課題を解決するための手段】本発明は上述した課題に
鑑みて為されたものであり、この発明に係わる混成集積
回路は、良熱伝導性の良好な混成集積回路基板と、前記
基板上に形成された導電路の所定位置に固着されたヒー
トシンクと、前記ヒートシンク上に固着され近傍の導電
路とワイヤ線に接続されたパワー半導体素子とを具備
し、前記パワー半導体素子と前記導電路とを接続する所
定のワイヤ線を前記ヒートシンク上に設けられた中継基
板を介して接続したことを特徴とする。
【０００７】また、この発明に係わる混成集積回路は、
良熱伝導性の良好な混成集積回路基板と、前記基板上に
形成された導電路の所定位置に固着されたヒートシンク
と、前記ヒートシンク上に固着され且つ近傍の導電路と
ワイヤ線に接続されたパワー回路部とそのパワー回路部
を駆動させる小信号系回路部とが１チップ化されたパワ
ー半導体素子とを具備し、前記パワー半導体素子の小信
号回路用の比較的細いワイヤ線のみが、前記ヒートシン
ク上に設けられた中継基板を介して導電路と接続され、
パワー回路部用の比較的太いワイヤ線が直接導電路に接
続されたことを特徴とする。
【０００８】
【作用】以上のように構成される混成集積回路において
は、ヒートシンク上に中継基板を設けているために、従
来の構造では実装不可能であった、パワー回路部とその
パワー回路部を駆動させる小信号系回路とが１チップ化
されたパワーモノ型のパワー半導体素子を固着実装する
ことができる。即ち、細線（約３０μ〜４０μ）と太線
（約２００μ〜３００μ）とのボンディングワイヤ接続
を必要とするパワー半導体素子をヒートシンク上に固着
実装することができる。
【０００９】
【実施例】以下に図１及び図２に示した実施例に基づい
て本発明を説明する。図１は本発明の混成集積回路の要
部拡大断面図であり、（１）は混成集積回路基板、
（２）は絶縁樹脂層、（３）は導電路、（４）はヒート
シンク、（５）はパワー半導体素子、（６）は中継基
板、（７）はワイヤ線である。
【００１０】混成集積回路基板（１）は良熱伝導性に優
れたアルミニウム基板が用いられ、その表面は周知技術
である陽極酸化法により、酸化アルミニウム膜が形成さ
れている。基板（１）上にはエポキシ樹脂等の絶縁樹脂
層（２）を介して、銅箔あるいは金属メッキ等の手段に
より所望形状の導電路（３）が形成されている。導電路
（３）上の所定位置には、図示されないがトランジス
タ、チップ抵抗、チップコンデンサー等の複数の回路素
子が固着実装されている。一方、パワー系の回路素子は
ヒートシンク（４）を介して実装される。
【００１１】本実施例で使用されるパワー半導体素子
（５）はパワートランジスタの如き、パワー回路のみが
形成されるものではなく、パワー回路部とそのパワー回
路部を駆動させる小信号系回路とが１チップ化された、
例えば高耐圧用ＭＯＳＦＥＴ等のパワーモノＩＣが使用
される。かかる、素子（５）を基板（１）上の導電路
（３）と接続する場合二種類のワイヤ線（７）を必要と
する。即ち、パワー回路部領域に形成された電極は約２
００μ〜５００μ径の比較的太いＡｌワイヤ線（７Ａ）
が用いられて接続され、小信号回路領域に形成された電
極は約２０〜５０μ径の比較的細いＡｌ等のワイヤ線
（７Ｂ）が用いられて接続される。
【００１２】一方、ヒートシンク（４）は銅等の材質が
用いられ、パワー半導体素子（５）の熱放散を考慮する
とヒートシンク（４）の肉厚は約２．５ｍｍ〜３．５ｍ
ｍ位必要である。ヒートシンク（４）はパワー半導体素
子（５）よりも大きめに形成され、ヒートシンク（４）
の略中央部に素子（５）が半田等のろう材により固着さ
れる。
【００１３】本発明の特徴とするところは、パワー半導
体素子（５）が固着されたヒートシンク（４）上に中継
基板（６）を配置し、小信号系回路用の細いＡｌワイヤ
線（７Ｂ）を中継基板（６）を介して導電路（３）に接
続するところにある。中継基板（６）はガラエポ、セラ
ミックス等の絶縁基板が用いられ、その主面上には導体
パターン（６Ａ）が形成されている。中継基板（６）は
図２に示す如く、パワー半導体素子（５）を囲むように
枠状に形成され、内側周端部には細いワイヤ線（７Ｂ）
が接続される固着パッド（６Ｂ）が形成され、外側周端
部には中継基板（６）と導電路（３）とを接続する固着
パッド（６Ｃ）が形成される。前述したように中継基板
（６）上には固着パッド（６Ｂ）（６Ｃ）が形成され、
夫々のパッドは導電パターンにより接続されている。中
継基板（６）の肉厚は細いＡｌ等のワイヤ線（７Ｂ）を
ボンディング可能にするために約０．４ｍｍ〜１．４ｍ
ｍ厚に形成されている。即ち、パワー半導体素子（５）
と中継基板（６）との段差が約１ｍｍ位までがＡｌ等の
細線を用いてボンディングできる範囲であるためチップ
の厚みが変化すれば中継基板の厚みも変化する。
【００１４】ヒートシンク（４）上にパワー半導体素子
（５）及び中継基板（６）を接着剤等を用いて仮接着し
た後、ヒートシンク（４）は導電路（３）上に半田固着
される。パワー半導体素子（５）の小信号系回路領域に
形成された電極と中継基板（６）の一方の固着パッド
（６Ｂ）とが細いＡｌワイヤ線（７Ｂ）により接続さ
れ、次に中継基板（６）の他の固着パッド（６Ａ）と導
電路（３）が太いＡｌワイヤ線（７Ａ）により接続され
る。この際、パワー半導体素子（５）のパワー回路領域
に形成された例えばベース、エミッタ電極と基板（１）
上の導電路（３）が太いＡｌワイヤ線（７Ａ）により接
続される。
【００１５】パワー半導体素子（５）と周辺の導電路
（３）とを接続した後、パワー半導体素子（５）及びワ
イヤ線（７）は図示されないがエポキシ樹脂等の封止樹
脂層によって封止される。ところで、本実施例で用いら
れた中継基板（６）はヒートシンク（４）と略同一の大
きさであるが、中継基板（６）の大きさは、これに限ら
れるものではなく、例えば若干大きめに形成することも
可能である。
【００１６】更に、中継基板（６）を大きめに形成し、
中継基板（６）上にチップコンデンサー等の回路素子を
搭載し、中継基板（６）と基板（１）とをリード端子で
接続すれば多層化された混成集積回路を実現することが
できる。
【００１７】
【発明の効果】以上に詳述した如く、本発明に依れば、
ヒートシンク上に中継基板を配置することにより、パワ
ー回路部とそのパワー回路部を駆動させる小信号回路と
が１チップ化された、いわゆるパワーモノ型のパワー半
導体素子の実装が可能となる。
【図面の簡単な説明】
【図１】図１は本発明の実施例を示す要部拡大断面図で
ある。
【図２】図２は図１の平面図である。
【図３】図３は従来の混成集積回路を示す断面図であ
る。
【符号の説明】
（１） 混成集積回路基板 （２） 絶縁樹脂層 （３） 導電路 （４） ヒートシンク （５） パワー半導体素子 （６） 中継基板 （７） ワイヤ線

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 良熱伝導性の良好な混成集積回路基板
    と、前記基板上に形成された導電路の所定位置に固着さ
    れたヒートシンクと、前記ヒートシンク上に固着され近
    傍の導電路とワイヤ線に接続されたパワー半導体素子と
    を具備し、 前記パワー半導体素子と前記導電路とを接続する所定の
    ワイヤ線を前記ヒートシンク上に設けられた中継基板を
    介して接続したことを特徴とする混成集積回路。
  2. 【請求項２】 良熱伝導性の良好な混成集積回路基板
    と、前記基板上に形成された導電路の所定位置に固着さ
    れたヒートシンクと、前記ヒートシンク上に固着され且
    つ近傍の導電路とワイヤ線に接続されたパワー回路部と
    そのパワー回路部を駆動させる小信号系回路部とが１チ
    ップ化されたパワー半導体素子とを具備し、 前記パワー半導体素子の小信号回路用の比較的細いワイ
    ヤ線のみが、前記ヒートシンク上に設けられた中継基板
    を介して導電路と接続され、パワー回路部用の比較的太
    いワイヤ線が直接導電路に接続されたことを特徴とする
    混成集積回路。
JP27264691A 1991-10-21 1991-10-21 混成集積回路 Expired - Fee Related JP3048707B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27264691A JP3048707B2 (ja) 1991-10-21 1991-10-21 混成集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27264691A JP3048707B2 (ja) 1991-10-21 1991-10-21 混成集積回路

Publications (2)

Publication Number Publication Date
JPH05109940A true JPH05109940A (ja) 1993-04-30
JP3048707B2 JP3048707B2 (ja) 2000-06-05

Family

ID=17516827

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228491A (ja) * 1999-02-09 2000-08-15 Toshiba Corp 半導体モジュール及び電力変換装置
JP2007335782A (ja) * 2006-06-19 2007-12-27 Fuji Electric Fa Components & Systems Co Ltd 半導体装置モジュールの製造方法及び半導体装置モジュール
WO2014013705A1 (ja) * 2012-07-17 2014-01-23 富士電機株式会社 半導体モジュール

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000228491A (ja) * 1999-02-09 2000-08-15 Toshiba Corp 半導体モジュール及び電力変換装置
JP2007335782A (ja) * 2006-06-19 2007-12-27 Fuji Electric Fa Components & Systems Co Ltd 半導体装置モジュールの製造方法及び半導体装置モジュール
WO2014013705A1 (ja) * 2012-07-17 2014-01-23 富士電機株式会社 半導体モジュール
US9245832B2 (en) 2012-07-17 2016-01-26 Fuji Electric Co., Ltd. Semiconductor module

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