JPH049393B2 - - Google Patents

Info

Publication number
JPH049393B2
JPH049393B2 JP56133140A JP13314081A JPH049393B2 JP H049393 B2 JPH049393 B2 JP H049393B2 JP 56133140 A JP56133140 A JP 56133140A JP 13314081 A JP13314081 A JP 13314081A JP H049393 B2 JPH049393 B2 JP H049393B2
Authority
JP
Japan
Prior art keywords
semiconductor
layer
insulating substrate
cladding layer
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56133140A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5833888A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13314081A priority Critical patent/JPS5833888A/ja
Publication of JPS5833888A publication Critical patent/JPS5833888A/ja
Publication of JPH049393B2 publication Critical patent/JPH049393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP13314081A 1981-08-25 1981-08-25 半導体レ−ザ Granted JPS5833888A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13314081A JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13314081A JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5833888A JPS5833888A (ja) 1983-02-28
JPH049393B2 true JPH049393B2 (enrdf_load_stackoverflow) 1992-02-20

Family

ID=15097678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13314081A Granted JPS5833888A (ja) 1981-08-25 1981-08-25 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5833888A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307001A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レ−ザダイオ−ドおよびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135281A (en) * 1976-05-06 1977-11-12 Mitsubishi Electric Corp Semiconductor device
JPS54123887A (en) * 1978-03-17 1979-09-26 Matsushita Electric Ind Co Ltd Photo integrated citcuit

Also Published As

Publication number Publication date
JPS5833888A (ja) 1983-02-28

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