JPH048367B2 - - Google Patents
Info
- Publication number
- JPH048367B2 JPH048367B2 JP61045755A JP4575586A JPH048367B2 JP H048367 B2 JPH048367 B2 JP H048367B2 JP 61045755 A JP61045755 A JP 61045755A JP 4575586 A JP4575586 A JP 4575586A JP H048367 B2 JPH048367 B2 JP H048367B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- pyrolytic graphite
- anisotropy
- reaction tube
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Conductive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045755A JPS62202809A (ja) | 1986-02-28 | 1986-02-28 | 熱分解黒鉛の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61045755A JPS62202809A (ja) | 1986-02-28 | 1986-02-28 | 熱分解黒鉛の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202809A JPS62202809A (ja) | 1987-09-07 |
| JPH048367B2 true JPH048367B2 (cs) | 1992-02-14 |
Family
ID=12728112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61045755A Granted JPS62202809A (ja) | 1986-02-28 | 1986-02-28 | 熱分解黒鉛の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202809A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7387680B2 (en) * | 2005-05-13 | 2008-06-17 | Cree, Inc. | Method and apparatus for the production of silicon carbide crystals |
| JP5220049B2 (ja) * | 2010-03-09 | 2013-06-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232904A (ja) * | 1983-06-14 | 1984-12-27 | Agency Of Ind Science & Technol | 導電性薄膜の製造方法 |
| JPS6037045A (ja) * | 1983-08-09 | 1985-02-26 | Ricoh Co Ltd | 情報記憶装置 |
-
1986
- 1986-02-28 JP JP61045755A patent/JPS62202809A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62202809A (ja) | 1987-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100287489B1 (ko) | 저온에서결정성탄화규소피막을형성시키는방법 | |
| EP0201696B1 (en) | Production of carbon films | |
| Diefendorf | The deposition of pyrolytic graphite | |
| US3900540A (en) | Method for making a film of refractory material having bi-directional reinforcing properties | |
| Zhang et al. | High‐speed preparation of< 111>‐and< 110>‐oriented β‐SiC films by laser chemical vapor deposition | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| EP0348026B1 (en) | Diamond growth on a substrate using microwave energy | |
| KR960012710B1 (ko) | 단일 유기규소 화합물을 이용한 탄화규소 막의 제조 | |
| US4761308A (en) | Process for the preparation of reflective pyrolytic graphite | |
| JPH048367B2 (cs) | ||
| US3537877A (en) | Low temperature method for producing amorphous boron-carbon deposits | |
| JPS634069A (ja) | 熱分解黒鉛の製造方法 | |
| JPH0321518B2 (cs) | ||
| Wang et al. | Synthesis of diamond from polymer seeded with nanometer-sized diamond particles | |
| US3398013A (en) | Preparation of films of boron carbide | |
| JPH0510425B2 (cs) | ||
| Yoshimoto et al. | Low temperature growth of pyrolytic carbon with well-ordered graphite structure by chemical vapour deposition methods | |
| RU2149215C1 (ru) | Способ получения слоев пироуглерода | |
| JPH06115913A (ja) | 炭窒化ほう素の合成法 | |
| JPS63252997A (ja) | ダイヤモンド単結晶の製造方法 | |
| JP2803396B2 (ja) | ダイヤモンド薄膜合成装置 | |
| US3556834A (en) | Low temperature method for producing amorphous boron-carbon deposits | |
| JPH072508A (ja) | グラファイト薄膜の形成方法 | |
| JPH048366B2 (cs) | ||
| JPH0413425B2 (cs) |