JPH0481856B2 - - Google Patents
Info
- Publication number
- JPH0481856B2 JPH0481856B2 JP59261838A JP26183884A JPH0481856B2 JP H0481856 B2 JPH0481856 B2 JP H0481856B2 JP 59261838 A JP59261838 A JP 59261838A JP 26183884 A JP26183884 A JP 26183884A JP H0481856 B2 JPH0481856 B2 JP H0481856B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- holder
- aluminum nitride
- ray
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59261838A JPS61140942A (ja) | 1984-12-13 | 1984-12-13 | リソグラフイ−用マスク構造体 |
US06/794,180 US4677042A (en) | 1984-11-05 | 1985-11-01 | Mask structure for lithography, method for preparation thereof and lithographic method |
DE19853539201 DE3539201A1 (de) | 1984-11-05 | 1985-11-05 | Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59261838A JPS61140942A (ja) | 1984-12-13 | 1984-12-13 | リソグラフイ−用マスク構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61140942A JPS61140942A (ja) | 1986-06-28 |
JPH0481856B2 true JPH0481856B2 (en, 2012) | 1992-12-25 |
Family
ID=17367442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59261838A Granted JPS61140942A (ja) | 1984-11-05 | 1984-12-13 | リソグラフイ−用マスク構造体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61140942A (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249623A (ja) * | 1985-07-19 | 1987-03-04 | Nec Corp | X線露光マスク |
JP2638080B2 (ja) * | 1988-05-31 | 1997-08-06 | 日新電機株式会社 | X線露光用マスク素材の製造方法 |
JPH0316116A (ja) * | 1989-03-09 | 1991-01-24 | Canon Inc | X線リソグラフィー用マスク構造体及びそれを用いたx線露光方法 |
-
1984
- 1984-12-13 JP JP59261838A patent/JPS61140942A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61140942A (ja) | 1986-06-28 |
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