JPH0482049B2 - - Google Patents

Info

Publication number
JPH0482049B2
JPH0482049B2 JP60001890A JP189085A JPH0482049B2 JP H0482049 B2 JPH0482049 B2 JP H0482049B2 JP 60001890 A JP60001890 A JP 60001890A JP 189085 A JP189085 A JP 189085A JP H0482049 B2 JPH0482049 B2 JP H0482049B2
Authority
JP
Japan
Prior art keywords
film
mask holder
silicon oxide
silicon
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60001890A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61160747A (ja
Inventor
Hideo Kato
Masaaki Matsushima
Keiko Matsuda
Hirofumi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60001890A priority Critical patent/JPS61160747A/ja
Priority to DE19863600169 priority patent/DE3600169A1/de
Publication of JPS61160747A publication Critical patent/JPS61160747A/ja
Priority to US07/170,688 priority patent/US4837123A/en
Publication of JPH0482049B2 publication Critical patent/JPH0482049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60001890A 1985-01-07 1985-01-09 リソグラフイ−法及びリソグラフイ−用マスク保持体 Granted JPS61160747A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60001890A JPS61160747A (ja) 1985-01-09 1985-01-09 リソグラフイ−法及びリソグラフイ−用マスク保持体
DE19863600169 DE3600169A1 (de) 1985-01-07 1986-01-07 Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
US07/170,688 US4837123A (en) 1985-01-07 1988-03-14 Mask structure for lithography, method of preparation thereof and lithographic method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60001890A JPS61160747A (ja) 1985-01-09 1985-01-09 リソグラフイ−法及びリソグラフイ−用マスク保持体

Publications (2)

Publication Number Publication Date
JPS61160747A JPS61160747A (ja) 1986-07-21
JPH0482049B2 true JPH0482049B2 (en, 2012) 1992-12-25

Family

ID=11514172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60001890A Granted JPS61160747A (ja) 1985-01-07 1985-01-09 リソグラフイ−法及びリソグラフイ−用マスク保持体

Country Status (1)

Country Link
JP (1) JPS61160747A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL88837A (en) * 1988-12-30 1993-08-18 Technion Res & Dev Foundation Method for the preparation of mask for x-ray lithography

Also Published As

Publication number Publication date
JPS61160747A (ja) 1986-07-21

Similar Documents

Publication Publication Date Title
US4677042A (en) Mask structure for lithography, method for preparation thereof and lithographic method
JPS599921A (ja) Ｘ線マスク用フイルム及びその製造方法
US4837123A (en) Mask structure for lithography, method of preparation thereof and lithographic method
JPS5916978A (ja) 金属被膜の選択的エツチング方法
US4468799A (en) Radiation lithography mask and method of manufacturing same
JPH0482049B2 (en, 2012)
JPH0481852B2 (en, 2012)
JPH0481853B2 (en, 2012)
JP3226250B2 (ja) 転写マスク
JPH0482047B2 (en, 2012)
JPH0481854B2 (en, 2012)
JPH0481855B2 (en, 2012)
JPH0482048B2 (en, 2012)
JPH0481851B2 (en, 2012)
JPH0481856B2 (en, 2012)
JPH0656831B2 (ja) リソグラフィー用マスク構造体の製造方法、及び薄膜の製造方法
JPS62119924A (ja) 透過マスクの作製方法
JPS63155618A (ja) Ｘ線露光用マスクの製造方法
JPH03105912A (ja) Ｘ線マスクブランクス及びｘ線マスク構造体
JP2000150364A (ja) Ｘ線マスクブランク及びその製造方法、並びにｘ線マスク及びその製造方法
JPH0428132B2 (en, 2012)
JPH0690998B2 (ja) Ｘ線リソグラフィー用マスク構造体の製造方法
JP3143035B2 (ja) 転写マスクの製造方法
JP2962049B2 (ja) Ｘ線マスク
JPS60120526A (ja) 微細パタン形成法