JPH0481852B2 - - Google Patents
Info
- Publication number
- JPH0481852B2 JPH0481852B2 JP59237615A JP23761584A JPH0481852B2 JP H0481852 B2 JPH0481852 B2 JP H0481852B2 JP 59237615 A JP59237615 A JP 59237615A JP 23761584 A JP23761584 A JP 23761584A JP H0481852 B2 JPH0481852 B2 JP H0481852B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum nitride
- mask holder
- nitride film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59237615A JPS61117545A (ja) | 1984-11-13 | 1984-11-13 | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 |
US06/794,180 US4677042A (en) | 1984-11-05 | 1985-11-01 | Mask structure for lithography, method for preparation thereof and lithographic method |
DE19853539201 DE3539201A1 (de) | 1984-11-05 | 1985-11-05 | Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59237615A JPS61117545A (ja) | 1984-11-13 | 1984-11-13 | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61117545A JPS61117545A (ja) | 1986-06-04 |
JPH0481852B2 true JPH0481852B2 (en, 2012) | 1992-12-25 |
Family
ID=17017940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59237615A Granted JPS61117545A (ja) | 1984-11-05 | 1984-11-13 | X線リソグラフイ−法及びx線リソグラフイ−用マスク保持体 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61117545A (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639932A (ja) * | 1986-06-30 | 1988-01-16 | Hoya Corp | X線露光用マスク |
JPH02309A (ja) * | 1987-12-29 | 1990-01-05 | Canon Inc | X線用マスクとそれをを用いた露光方法 |
DE10134752B4 (de) * | 2001-07-17 | 2005-01-27 | Epcos Ag | Überspannungsableiter |
-
1984
- 1984-11-13 JP JP59237615A patent/JPS61117545A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61117545A (ja) | 1986-06-04 |
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