JPH0481855B2 - - Google Patents
Info
- Publication number
- JPH0481855B2 JPH0481855B2 JP59248162A JP24816284A JPH0481855B2 JP H0481855 B2 JPH0481855 B2 JP H0481855B2 JP 59248162 A JP59248162 A JP 59248162A JP 24816284 A JP24816284 A JP 24816284A JP H0481855 B2 JPH0481855 B2 JP H0481855B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- aluminum nitride
- ray
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59248162A JPS61126551A (ja) | 1984-11-26 | 1984-11-26 | X線リソグラフイ−用マスク構造体の製造方法 |
US06/794,180 US4677042A (en) | 1984-11-05 | 1985-11-01 | Mask structure for lithography, method for preparation thereof and lithographic method |
DE19853539201 DE3539201A1 (de) | 1984-11-05 | 1985-11-05 | Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59248162A JPS61126551A (ja) | 1984-11-26 | 1984-11-26 | X線リソグラフイ−用マスク構造体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61126551A JPS61126551A (ja) | 1986-06-14 |
JPH0481855B2 true JPH0481855B2 (en, 2012) | 1992-12-25 |
Family
ID=17174137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59248162A Granted JPS61126551A (ja) | 1984-11-05 | 1984-11-26 | X線リソグラフイ−用マスク構造体の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61126551A (en, 2012) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795512B2 (ja) * | 1987-05-14 | 1995-10-11 | 沖電気工業株式会社 | X線露光マスク用メンブレンの製造方法 |
US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
US6284411B1 (en) | 1996-10-02 | 2001-09-04 | Japan Storage Battery Co., Ltd. | Valve regulated type battery and producing method thereof |
-
1984
- 1984-11-26 JP JP59248162A patent/JPS61126551A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61126551A (ja) | 1986-06-14 |
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