JPH0480544B2 - - Google Patents

Info

Publication number
JPH0480544B2
JPH0480544B2 JP57003584A JP358482A JPH0480544B2 JP H0480544 B2 JPH0480544 B2 JP H0480544B2 JP 57003584 A JP57003584 A JP 57003584A JP 358482 A JP358482 A JP 358482A JP H0480544 B2 JPH0480544 B2 JP H0480544B2
Authority
JP
Japan
Prior art keywords
impurity diffusion
diffusion layer
floating gate
gate conductor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57003584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58121679A (ja
Inventor
Ryuichi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11561497&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0480544(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57003584A priority Critical patent/JPS58121679A/ja
Publication of JPS58121679A publication Critical patent/JPS58121679A/ja
Publication of JPH0480544B2 publication Critical patent/JPH0480544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57003584A 1982-01-12 1982-01-12 半導体不揮発性記憶装置 Granted JPS58121679A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003584A JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP23801193A Division JPH0783067B2 (ja) 1993-09-24 1993-09-24 半導体不揮発性記憶装置の書き込み及び消去方法

Publications (2)

Publication Number Publication Date
JPS58121679A JPS58121679A (ja) 1983-07-20
JPH0480544B2 true JPH0480544B2 (zh) 1992-12-18

Family

ID=11561497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003584A Granted JPS58121679A (ja) 1982-01-12 1982-01-12 半導体不揮発性記憶装置

Country Status (1)

Country Link
JP (1) JPS58121679A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPH01211979A (ja) * 1988-02-19 1989-08-25 Toshiba Corp 不揮発性半導体メモリ
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
KR960009995B1 (ko) * 1992-07-31 1996-07-25 삼성전자 주식회사 반도체 장치의 제조 방법 및 그 구조
US5424979A (en) * 1992-10-02 1995-06-13 Matsushita Electric Industrial Co., Ltd. Non-volatile memory cell
JP2536413B2 (ja) * 1993-06-28 1996-09-18 日本電気株式会社 半導体集積回路装置の製造方法
JP2573464B2 (ja) * 1993-10-12 1997-01-22 株式会社東芝 不揮発性半導体記憶装置
EP0748521B1 (en) * 1994-03-03 2001-11-07 Rohm Corporation Over-erase detection in a low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
JP2885134B2 (ja) * 1995-06-15 1999-04-19 日本電気株式会社 半導体メモリ装置の製造方法
JP4605956B2 (ja) 2001-09-19 2011-01-05 株式会社リコー 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160471A (en) * 1979-04-26 1980-12-13 Itt Programmable semiconductor memory cell
JPS5633882A (en) * 1979-08-24 1981-04-04 Centre Electron Horloger Nonnvolatile memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法

Also Published As

Publication number Publication date
JPS58121679A (ja) 1983-07-20

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