JPH0480540B2 - - Google Patents

Info

Publication number
JPH0480540B2
JPH0480540B2 JP58005084A JP508483A JPH0480540B2 JP H0480540 B2 JPH0480540 B2 JP H0480540B2 JP 58005084 A JP58005084 A JP 58005084A JP 508483 A JP508483 A JP 508483A JP H0480540 B2 JPH0480540 B2 JP H0480540B2
Authority
JP
Japan
Prior art keywords
insulating film
layer
semiconductor
conductive layer
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58005084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59129461A (ja
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58005084A priority Critical patent/JPS59129461A/ja
Publication of JPS59129461A publication Critical patent/JPS59129461A/ja
Publication of JPH0480540B2 publication Critical patent/JPH0480540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Memories (AREA)
JP58005084A 1983-01-13 1983-01-13 半導体装置とその製造方法 Granted JPS59129461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58005084A JPS59129461A (ja) 1983-01-13 1983-01-13 半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58005084A JPS59129461A (ja) 1983-01-13 1983-01-13 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPS59129461A JPS59129461A (ja) 1984-07-25
JPH0480540B2 true JPH0480540B2 (enrdf_load_stackoverflow) 1992-12-18

Family

ID=11601518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58005084A Granted JPS59129461A (ja) 1983-01-13 1983-01-13 半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS59129461A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE41267T1 (de) * 1984-04-25 1989-03-15 Siemens Ag Ein-transistor-speicherzelle fuer hochintegrierte dynamische halbleiterspeicher und verfahren zu ihrer herstellung.
JPS60250665A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体記憶装置
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5687359A (en) * 1979-12-19 1981-07-15 Fujitsu Ltd Manufacture of one transistor type memory cell
JPS58212160A (ja) * 1982-06-02 1983-12-09 Toshiba Corp 半導体記憶装置
JPS59110154A (ja) * 1982-12-16 1984-06-26 Nec Corp 半導体メモリセル

Also Published As

Publication number Publication date
JPS59129461A (ja) 1984-07-25

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