JPH0480533B2 - - Google Patents
Info
- Publication number
- JPH0480533B2 JPH0480533B2 JP14499586A JP14499586A JPH0480533B2 JP H0480533 B2 JPH0480533 B2 JP H0480533B2 JP 14499586 A JP14499586 A JP 14499586A JP 14499586 A JP14499586 A JP 14499586A JP H0480533 B2 JPH0480533 B2 JP H0480533B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- anisotropic etching
- cleaning
- present
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14499586A JPS632322A (ja) | 1986-06-23 | 1986-06-23 | シリコン半導体における異方性エツチング面の突起物除去方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14499586A JPS632322A (ja) | 1986-06-23 | 1986-06-23 | シリコン半導体における異方性エツチング面の突起物除去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS632322A JPS632322A (ja) | 1988-01-07 |
| JPH0480533B2 true JPH0480533B2 (cs) | 1992-12-18 |
Family
ID=15375021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14499586A Granted JPS632322A (ja) | 1986-06-23 | 1986-06-23 | シリコン半導体における異方性エツチング面の突起物除去方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS632322A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3054123B2 (ja) * | 1998-06-08 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | イオン注入方法 |
| US6426254B2 (en) * | 1999-06-09 | 2002-07-30 | Infineon Technologies Ag | Method for expanding trenches by an anisotropic wet etch |
-
1986
- 1986-06-23 JP JP14499586A patent/JPS632322A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS632322A (ja) | 1988-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |