JPH0478187B2 - - Google Patents

Info

Publication number
JPH0478187B2
JPH0478187B2 JP61271211A JP27121186A JPH0478187B2 JP H0478187 B2 JPH0478187 B2 JP H0478187B2 JP 61271211 A JP61271211 A JP 61271211A JP 27121186 A JP27121186 A JP 27121186A JP H0478187 B2 JPH0478187 B2 JP H0478187B2
Authority
JP
Japan
Prior art keywords
region
thyristor
base
npn transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61271211A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63124566A (ja
Inventor
Kuniaki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61271211A priority Critical patent/JPS63124566A/ja
Priority to KR1019870012690A priority patent/KR900008151B1/ko
Publication of JPS63124566A publication Critical patent/JPS63124566A/ja
Publication of JPH0478187B2 publication Critical patent/JPH0478187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/1302—GTO - Gate Turn-Off thyristor

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
JP61271211A 1986-11-14 1986-11-14 サイリスタ Granted JPS63124566A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61271211A JPS63124566A (ja) 1986-11-14 1986-11-14 サイリスタ
KR1019870012690A KR900008151B1 (ko) 1986-11-14 1987-11-11 다이리스터

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61271211A JPS63124566A (ja) 1986-11-14 1986-11-14 サイリスタ

Publications (2)

Publication Number Publication Date
JPS63124566A JPS63124566A (ja) 1988-05-28
JPH0478187B2 true JPH0478187B2 (enrdf_load_stackoverflow) 1992-12-10

Family

ID=17496894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61271211A Granted JPS63124566A (ja) 1986-11-14 1986-11-14 サイリスタ

Country Status (2)

Country Link
JP (1) JPS63124566A (enrdf_load_stackoverflow)
KR (1) KR900008151B1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452312B1 (ko) * 1997-05-13 2005-07-05 삼성전자주식회사 지티오(gto)를이용한메모리소자및그의제조방법

Also Published As

Publication number Publication date
JPS63124566A (ja) 1988-05-28
KR880006784A (ko) 1988-07-25
KR900008151B1 (ko) 1990-11-03

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