JPH0478180B2 - - Google Patents

Info

Publication number
JPH0478180B2
JPH0478180B2 JP60186068A JP18606885A JPH0478180B2 JP H0478180 B2 JPH0478180 B2 JP H0478180B2 JP 60186068 A JP60186068 A JP 60186068A JP 18606885 A JP18606885 A JP 18606885A JP H0478180 B2 JPH0478180 B2 JP H0478180B2
Authority
JP
Japan
Prior art keywords
silicon glass
groove
silicon
forming
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60186068A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6246543A (ja
Inventor
Keimei Mikoshiba
Yumi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP18606885A priority Critical patent/JPS6246543A/ja
Publication of JPS6246543A publication Critical patent/JPS6246543A/ja
Publication of JPH0478180B2 publication Critical patent/JPH0478180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
JP18606885A 1985-08-23 1985-08-23 半導体装置の製造方法 Granted JPS6246543A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18606885A JPS6246543A (ja) 1985-08-23 1985-08-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18606885A JPS6246543A (ja) 1985-08-23 1985-08-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6246543A JPS6246543A (ja) 1987-02-28
JPH0478180B2 true JPH0478180B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-12-10

Family

ID=16181825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18606885A Granted JPS6246543A (ja) 1985-08-23 1985-08-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6246543A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233273A (ja) * 1990-12-28 1992-08-21 Matsushita Electron Corp カラー固体撮像装置の製造方法
DE59402986D1 (de) * 1993-07-27 1997-07-10 Siemens Ag Verfahren zur Herstellung eines Halbleiterschichtaufbaus mit planarisierter Oberfläche und dessen Verwendung bei der Herstellung eines Bipolartransistors sowie eines DRAM
US5459096A (en) * 1994-07-05 1995-10-17 Motorola Inc. Process for fabricating a semiconductor device using dual planarization layers
US5661073A (en) * 1995-08-11 1997-08-26 Micron Technology, Inc. Method for forming field oxide having uniform thickness
KR100326251B1 (ko) * 1999-06-28 2002-03-08 박종섭 고밀도 플라즈마 산화막 평탄화 방법 및 그를 이용한 반도체소자의 소자분리막 형성 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167934A (ja) * 1984-09-11 1986-04-08 Nec Corp 溝埋込分離の形成方法

Also Published As

Publication number Publication date
JPS6246543A (ja) 1987-02-28

Similar Documents

Publication Publication Date Title
US5480832A (en) Method for fabrication of semiconductor device
JPH02156552A (ja) 半導体装置およびその製造方法
JP3539483B2 (ja) 半導体装置の製造方法
JPH0478180B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6174350A (ja) 半導体装置の製造方法
JPH0434306B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6325708B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3021850B2 (ja) 半導体装置の製造方法
JPH08306783A (ja) 半導体装置のコンタクト形成方法
JP2964635B2 (ja) 半導体記憶装置の製造方法
JP2812013B2 (ja) 半導体装置の製造方法
JPS6130046A (ja) 半導体集積回路装置の製造方法
JP4228414B2 (ja) 半導体装置の製造方法
US5541136A (en) Method of forming a field oxide film in a semiconductor device
JP3552913B2 (ja) 半導体素子の素子分離方法
JPS63228732A (ja) 半導体装置の製造方法
JPH0521592A (ja) 半導体装置の製造方法及び半導体装置
JPH079930B2 (ja) 半導体装置の製造方法
JPS6116545A (ja) 半導体集積回路装置の製造方法
JPH033948B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62232143A (ja) 半導体装置の製造方法
JPS62296438A (ja) 半導体素子の製造方法
JPS6139736B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62273750A (ja) 半導体装置およびその製造方法
JPH01315160A (ja) 半導体装置の製造方法