JPH0474870B2 - - Google Patents
Info
- Publication number
- JPH0474870B2 JPH0474870B2 JP57230042A JP23004282A JPH0474870B2 JP H0474870 B2 JPH0474870 B2 JP H0474870B2 JP 57230042 A JP57230042 A JP 57230042A JP 23004282 A JP23004282 A JP 23004282A JP H0474870 B2 JPH0474870 B2 JP H0474870B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- substrate
- region
- layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57230042A JPS59124154A (ja) | 1982-12-29 | 1982-12-29 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57230042A JPS59124154A (ja) | 1982-12-29 | 1982-12-29 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59124154A JPS59124154A (ja) | 1984-07-18 |
JPH0474870B2 true JPH0474870B2 (enrdf_load_stackoverflow) | 1992-11-27 |
Family
ID=16901649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57230042A Granted JPS59124154A (ja) | 1982-12-29 | 1982-12-29 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59124154A (enrdf_load_stackoverflow) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417681A (en) * | 1977-07-08 | 1979-02-09 | Fujitsu Ltd | Manufacture of semiconductor memory device |
JPS55156461U (enrdf_load_stackoverflow) * | 1979-04-27 | 1980-11-11 |
-
1982
- 1982-12-29 JP JP57230042A patent/JPS59124154A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59124154A (ja) | 1984-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5012308A (en) | Semiconductor memory device | |
US6087691A (en) | Semiconductor device having lower minority carrier noise | |
JP2634163B2 (ja) | 半導体記憶装置 | |
US4833647A (en) | Semiconductor memory device having high capacitance and improved radiation immunity | |
US5030586A (en) | Method for manufacturing semiconductor memory device having improved resistance to α particle induced soft errors | |
EP0018764B1 (en) | A semiconductor memory device in which soft errors due to alpha particles are prevented | |
KR930009127B1 (ko) | 스택형캐패시터를구비하는반도체메모리장치 | |
JPS602782B2 (ja) | 半導体記憶装置 | |
US6399989B1 (en) | Radiation hardened silicon-on-insulator (SOI) transistor having a body contact | |
KR900002474B1 (ko) | 반도체 메모리 | |
JPH0474870B2 (enrdf_load_stackoverflow) | ||
US5023682A (en) | Semiconductor memory device | |
US6716728B2 (en) | Radiation hardened silicon-on-insulator (SOI) transistor having a body contact | |
US4763182A (en) | Semiconductor memory device with deep bit-line channel stopper | |
JPS58125863A (ja) | 半導体装置 | |
KR900002915B1 (ko) | 반도체 기억 장치 | |
JP2666335B2 (ja) | 半導体メモリ装置の製造方法 | |
JP2572624B2 (ja) | 半導体装置 | |
KR890002589B1 (ko) | 반도체 메모리장치 | |
JPH0140504B2 (enrdf_load_stackoverflow) | ||
JPH0669081B2 (ja) | 半導体メモリの製造方法 | |
JPS58105566A (ja) | 半導体構体 | |
EP0222506A1 (en) | Semiconductor memory | |
JPH0245341B2 (enrdf_load_stackoverflow) | ||
JPS62141758A (ja) | 半導体記憶装置 |