JPH0245341B2 - - Google Patents
Info
- Publication number
- JPH0245341B2 JPH0245341B2 JP55001162A JP116280A JPH0245341B2 JP H0245341 B2 JPH0245341 B2 JP H0245341B2 JP 55001162 A JP55001162 A JP 55001162A JP 116280 A JP116280 A JP 116280A JP H0245341 B2 JPH0245341 B2 JP H0245341B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- memory
- memory cell
- well
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP116280A JPS5698855A (en) | 1980-01-09 | 1980-01-09 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP116280A JPS5698855A (en) | 1980-01-09 | 1980-01-09 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698855A JPS5698855A (en) | 1981-08-08 |
| JPH0245341B2 true JPH0245341B2 (enrdf_load_stackoverflow) | 1990-10-09 |
Family
ID=11493736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP116280A Granted JPS5698855A (en) | 1980-01-09 | 1980-01-09 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698855A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58148450A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体集積回路 |
| JPS58148451A (ja) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | 半導体集積回路 |
-
1980
- 1980-01-09 JP JP116280A patent/JPS5698855A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698855A (en) | 1981-08-08 |
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