JPS59124154A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS59124154A
JPS59124154A JP57230042A JP23004282A JPS59124154A JP S59124154 A JPS59124154 A JP S59124154A JP 57230042 A JP57230042 A JP 57230042A JP 23004282 A JP23004282 A JP 23004282A JP S59124154 A JPS59124154 A JP S59124154A
Authority
JP
Japan
Prior art keywords
layer
region
substrate
depletion layer
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57230042A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0474870B2 (enrdf_load_stackoverflow
Inventor
Tomio Nakano
中野　富男
Yoshihiro Takemae
義博 竹前
Kimiaki Sato
公昭 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57230042A priority Critical patent/JPS59124154A/ja
Publication of JPS59124154A publication Critical patent/JPS59124154A/ja
Publication of JPH0474870B2 publication Critical patent/JPH0474870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
JP57230042A 1982-12-29 1982-12-29 半導体記憶装置 Granted JPS59124154A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230042A JPS59124154A (ja) 1982-12-29 1982-12-29 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230042A JPS59124154A (ja) 1982-12-29 1982-12-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59124154A true JPS59124154A (ja) 1984-07-18
JPH0474870B2 JPH0474870B2 (enrdf_load_stackoverflow) 1992-11-27

Family

ID=16901649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230042A Granted JPS59124154A (ja) 1982-12-29 1982-12-29 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59124154A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417681A (en) * 1977-07-08 1979-02-09 Fujitsu Ltd Manufacture of semiconductor memory device
JPS55156461U (enrdf_load_stackoverflow) * 1979-04-27 1980-11-11

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417681A (en) * 1977-07-08 1979-02-09 Fujitsu Ltd Manufacture of semiconductor memory device
JPS55156461U (enrdf_load_stackoverflow) * 1979-04-27 1980-11-11

Also Published As

Publication number Publication date
JPH0474870B2 (enrdf_load_stackoverflow) 1992-11-27

Similar Documents

Publication Publication Date Title
US4298962A (en) Memory
US4688064A (en) Dynamic memory cell and method for manufacturing the same
EP0145606B1 (en) Semiconductor memory device
EP0032695A2 (en) Semiconductor memory device
JP2634163B2 (ja) 半導体記憶装置
US5030586A (en) Method for manufacturing semiconductor memory device having improved resistance to α particle induced soft errors
EP0018764B1 (en) A semiconductor memory device in which soft errors due to alpha particles are prevented
US4635085A (en) Semiconductor memory device
KR930009127B1 (ko) 스택형캐패시터를구비하는반도체메모리장치
EP0159824A2 (en) Semiconductor device with recessed capacitor
KR890004765B1 (ko) 반도체 기억장치
JPS59124154A (ja) 半導体記憶装置
US4825268A (en) Semiconductor memory device
US5023682A (en) Semiconductor memory device
JPS58125863A (ja) 半導体装置
JPS60113462A (ja) 半導体記憶装置
US5027167A (en) Semiconductor intergrated circuit
JP2666335B2 (ja) 半導体メモリ装置の製造方法
JPS58105566A (ja) 半導体構体
EP0058998A1 (en) Semiconductor memory device
JPH0245341B2 (enrdf_load_stackoverflow)
JP2830808B2 (ja) 不揮発性半導体記憶装置
JPS61140166A (ja) 半導体装置
JPH0470782B2 (enrdf_load_stackoverflow)
JPS62152156A (ja) 半導体記憶装置