JPH0474430B2 - - Google Patents
Info
- Publication number
- JPH0474430B2 JPH0474430B2 JP60228077A JP22807785A JPH0474430B2 JP H0474430 B2 JPH0474430 B2 JP H0474430B2 JP 60228077 A JP60228077 A JP 60228077A JP 22807785 A JP22807785 A JP 22807785A JP H0474430 B2 JPH0474430 B2 JP H0474430B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- cyclotron resonance
- substrate
- product gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22807785A JPS6286165A (ja) | 1985-10-14 | 1985-10-14 | 薄膜形成方法 |
CN86106620A CN1027549C (zh) | 1985-10-14 | 1986-10-14 | 利用磁场的微波增强型cvd系统和方法 |
KR1019860008597A KR920000591B1 (ko) | 1985-10-14 | 1986-10-14 | 마이크로파 강화 cvd시스템 |
US08/219,287 US5512102A (en) | 1985-10-14 | 1994-03-28 | Microwave enhanced CVD system under magnetic field |
CN94106741A CN1053230C (zh) | 1985-10-14 | 1994-06-21 | 利用磁场的微波增强型cvd系统和方法 |
CN94106740A CN1053229C (zh) | 1985-10-14 | 1994-06-21 | 利用磁场的微波增强型cvd系统和方法 |
US08/814,993 US6230650B1 (en) | 1985-10-14 | 1997-03-14 | Microwave enhanced CVD system under magnetic field |
US08/853,589 US6673722B1 (en) | 1985-10-14 | 1997-05-09 | Microwave enhanced CVD system under magnetic field |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22807785A JPS6286165A (ja) | 1985-10-14 | 1985-10-14 | 薄膜形成方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1309388A Division JPH0198221A (ja) | 1988-01-23 | 1988-01-23 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6286165A JPS6286165A (ja) | 1987-04-20 |
JPH0474430B2 true JPH0474430B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-11-26 |
Family
ID=16870830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22807785A Granted JPS6286165A (ja) | 1985-10-14 | 1985-10-14 | 薄膜形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6286165A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0732135B2 (ja) * | 1987-10-07 | 1995-04-10 | 松下電器産業株式会社 | ヘテロ接合素子の製造方法 |
JPH0198221A (ja) * | 1988-01-23 | 1989-04-17 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
CN115679443B (zh) * | 2021-12-02 | 2023-06-30 | 北京大学 | 一种光辅助金属有机化合物化学气相沉积装置及实现方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61248420A (ja) * | 1985-04-26 | 1986-11-05 | Canon Inc | 堆積膜形成法 |
JPS6227575A (ja) * | 1985-07-30 | 1987-02-05 | Yasuo Tarui | 成膜方法 |
-
1985
- 1985-10-14 JP JP22807785A patent/JPS6286165A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6286165A (ja) | 1987-04-20 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |