JPH0472384B2 - - Google Patents

Info

Publication number
JPH0472384B2
JPH0472384B2 JP58093524A JP9352483A JPH0472384B2 JP H0472384 B2 JPH0472384 B2 JP H0472384B2 JP 58093524 A JP58093524 A JP 58093524A JP 9352483 A JP9352483 A JP 9352483A JP H0472384 B2 JPH0472384 B2 JP H0472384B2
Authority
JP
Japan
Prior art keywords
gallium arsenide
layer
arsenide layer
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58093524A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59218778A (ja
Inventor
Kinshiro Kosemura
Yoshimi Yamashita
Sumio Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58093524A priority Critical patent/JPS59218778A/ja
Publication of JPS59218778A publication Critical patent/JPS59218778A/ja
Publication of JPH0472384B2 publication Critical patent/JPH0472384B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58093524A 1983-05-27 1983-05-27 半導体装置及びその製造方法 Granted JPS59218778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58093524A JPS59218778A (ja) 1983-05-27 1983-05-27 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093524A JPS59218778A (ja) 1983-05-27 1983-05-27 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS59218778A JPS59218778A (ja) 1984-12-10
JPH0472384B2 true JPH0472384B2 (enrdf_load_stackoverflow) 1992-11-18

Family

ID=14084704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093524A Granted JPS59218778A (ja) 1983-05-27 1983-05-27 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS59218778A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500218A (nl) * 1985-01-28 1986-08-18 Philips Nv Halfgeleiderinrichting met tweedimensionaal ladingsdragergas.
JP2607310B2 (ja) * 1990-11-30 1997-05-07 ローム株式会社 電界効果トランジスタの製造方法
JPH04260338A (ja) * 1991-02-14 1992-09-16 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002217212A (ja) * 2001-01-19 2002-08-02 Murata Mfg Co Ltd ヘテロ接合電界効果トランジスタ

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE ELECTRON DEVICE LETTERS=1981 *
JAPANESE JOURNAL OF APPLIED PHYSICS=1981 *

Also Published As

Publication number Publication date
JPS59218778A (ja) 1984-12-10

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