JPH0471877B2 - - Google Patents
Info
- Publication number
- JPH0471877B2 JPH0471877B2 JP62109519A JP10951987A JPH0471877B2 JP H0471877 B2 JPH0471877 B2 JP H0471877B2 JP 62109519 A JP62109519 A JP 62109519A JP 10951987 A JP10951987 A JP 10951987A JP H0471877 B2 JPH0471877 B2 JP H0471877B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- cuo
- material rod
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 55
- 239000002994 raw material Substances 0.000 claims description 25
- 239000002904 solvent Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- NZPIUJUFIFZSPW-UHFFFAOYSA-H lanthanum carbonate Chemical compound [La+3].[La+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O NZPIUJUFIFZSPW-UHFFFAOYSA-H 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910017569 La2(CO3)3 Inorganic materials 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229960001633 lanthanum carbonate Drugs 0.000 claims description 3
- 238000000034 method Methods 0.000 description 15
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 230000012010 growth Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 238000007716 flux method Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62109519A JPS63274697A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
| US07/168,021 US4956334A (en) | 1987-05-01 | 1988-03-14 | Method for preparing a single crystal of lanthanum cuprate |
| EP88104090A EP0288709B1 (en) | 1987-05-01 | 1988-03-15 | method for preparing a single crystal of lanthanum cuprate |
| DE8888104090T DE3872922T2 (de) | 1987-05-01 | 1988-03-15 | Verfahren zur herstellung von lanthankuprat-einkristall. |
| US07/521,624 US5057492A (en) | 1987-05-01 | 1990-05-10 | Method for preparing a single crystal of lanthanum cuprate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62109519A JPS63274697A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63274697A JPS63274697A (ja) | 1988-11-11 |
| JPH0471877B2 true JPH0471877B2 (nl) | 1992-11-16 |
Family
ID=14512318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62109519A Granted JPS63274697A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63274697A (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5157017A (en) * | 1987-06-12 | 1992-10-20 | At&T Bell Laboratories | Method of fabricating a superconductive body |
| JP2684432B2 (ja) * | 1988-12-29 | 1997-12-03 | 弘直 兒嶋 | 超電導酸化物の単結晶及びその製造方法 |
-
1987
- 1987-05-01 JP JP62109519A patent/JPS63274697A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63274697A (ja) | 1988-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0004974B1 (en) | Process for producing a single crystal of ktiopo4 or its analogues | |
| US5057492A (en) | Method for preparing a single crystal of lanthanum cuprate | |
| US5444040A (en) | Superconductive oxide single crystal and manufacturing method thereof | |
| JPH0471877B2 (nl) | ||
| JP2684432B2 (ja) | 超電導酸化物の単結晶及びその製造方法 | |
| EP0148946B1 (en) | Method of producing a chrysoberyl single crystal | |
| US4708763A (en) | Method of manufacturing bismuth germanate crystals | |
| JP3548910B2 (ja) | ＺｎＯ単結晶の製造方法 | |
| JPH0512317B2 (nl) | ||
| JP3000137B2 (ja) | 超伝導体ＰｒＢａ２Ｃｕ３Ｏｙ単結晶の製造方法 | |
| JP2733197B2 (ja) | 希土類元素含有単結晶の製造方法 | |
| JPH0471876B2 (nl) | ||
| JP3870258B2 (ja) | 酸化物半導体単結晶の製造方法 | |
| JPH06345583A (ja) | 単結晶製造方法及び単結晶製造装置 | |
| JP3906359B2 (ja) | Ｐ形半導体ＳｒＣｕ２Ｏ２単結晶の製造方法 | |
| JPH0243717B2 (ja) | Bapbo3keisankabutsuchodendotaitanketsushonoyoekihikiagehonyoruseizohoho | |
| JPS5938192B2 (ja) | 星彩を放つコランダム単結晶の製造法 | |
| JPS63274695A (ja) | 銅酸ランタン単結晶の製造方法 | |
| JP2622165B2 (ja) | ゲルマニウム酸ビスマス単結晶の製造方法 | |
| JPS6156200B2 (nl) | ||
| JPH0269393A (ja) | 超伝導酸化物単結晶成長方法 | |
| JPH01275493A (ja) | 酸化物超電導体単結晶の育成方法 | |
| JPS6128638B2 (nl) | ||
| JPS62275097A (ja) | 四チタン酸バリウムの巨大単結晶及びその製造方法 | |
| JPS6027677A (ja) | 浮遊帯溶融法による固溶体単結晶の製造法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |