JPH0470781B2 - - Google Patents

Info

Publication number
JPH0470781B2
JPH0470781B2 JP58007236A JP723683A JPH0470781B2 JP H0470781 B2 JPH0470781 B2 JP H0470781B2 JP 58007236 A JP58007236 A JP 58007236A JP 723683 A JP723683 A JP 723683A JP H0470781 B2 JPH0470781 B2 JP H0470781B2
Authority
JP
Japan
Prior art keywords
conductivity type
transistor
layer
type
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58007236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59134870A (ja
Inventor
Isao Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58007236A priority Critical patent/JPS59134870A/ja
Publication of JPS59134870A publication Critical patent/JPS59134870A/ja
Publication of JPH0470781B2 publication Critical patent/JPH0470781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58007236A 1983-01-21 1983-01-21 半導体装置の製造方法 Granted JPS59134870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58007236A JPS59134870A (ja) 1983-01-21 1983-01-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58007236A JPS59134870A (ja) 1983-01-21 1983-01-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59134870A JPS59134870A (ja) 1984-08-02
JPH0470781B2 true JPH0470781B2 (cs) 1992-11-11

Family

ID=11660357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58007236A Granted JPS59134870A (ja) 1983-01-21 1983-01-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59134870A (cs)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474367A (en) * 1977-11-26 1979-06-14 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS59134870A (ja) 1984-08-02

Similar Documents

Publication Publication Date Title
JPH04266047A (ja) 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
EP0001300B1 (en) Method of manufacturing a locos semiconductor device
KR910006672B1 (ko) 반도체 집적회로 장치 및 그의 제조 방법
JPS60194558A (ja) 半導体装置の製造方法
JPH0123949B2 (cs)
JPH0470781B2 (cs)
JP3877459B2 (ja) 半導体装置の製造方法
KR100208645B1 (ko) 광 반도체 장치
JPH10242456A (ja) 横型絶縁ゲートバイポーラトランジスタ
JPH0425711B2 (cs)
JPS60123062A (ja) 半導体集積回路の製造方法
JPH0271526A (ja) 半導体集積回路およびその製造方法
JPS6347965A (ja) 半導体集積回路
JPH065708B2 (ja) 半導体集積回路装置
JPS63136660A (ja) 半導体装置とその製造法
JPS58107645A (ja) 半導体装置の製法
JPS6149460A (ja) 半導体装置の製造方法
JPS62122169A (ja) 半導体装置の製造法
JPH0243338B2 (cs)
JPH0379870B2 (cs)
JPH061814B2 (ja) 半導体装置
JPH02278866A (ja) 半導体装置の製造方法
JP2002076132A (ja) 半導体装置およびその製造方法
JPS61125079A (ja) 半導体装置およびその製造方法
JPH0590275A (ja) 半導体装置及びその製造方法