JPH0466379B2 - - Google Patents
Info
- Publication number
- JPH0466379B2 JPH0466379B2 JP11189886A JP11189886A JPH0466379B2 JP H0466379 B2 JPH0466379 B2 JP H0466379B2 JP 11189886 A JP11189886 A JP 11189886A JP 11189886 A JP11189886 A JP 11189886A JP H0466379 B2 JPH0466379 B2 JP H0466379B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- bonding layer
- forming
- shallow
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- -1 silicon ions Chemical class 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11189886A JPS62266829A (ja) | 1986-05-14 | 1986-05-14 | 浅い接合層の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11189886A JPS62266829A (ja) | 1986-05-14 | 1986-05-14 | 浅い接合層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62266829A JPS62266829A (ja) | 1987-11-19 |
| JPH0466379B2 true JPH0466379B2 (US07709020-20100504-C00041.png) | 1992-10-23 |
Family
ID=14572897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11189886A Granted JPS62266829A (ja) | 1986-05-14 | 1986-05-14 | 浅い接合層の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62266829A (US07709020-20100504-C00041.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0644559B2 (ja) * | 1987-09-04 | 1994-06-08 | 株式会社東芝 | 半導体集積回路の製造方法 |
| JPH0291932A (ja) * | 1988-09-28 | 1990-03-30 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2810947B2 (ja) * | 1990-01-19 | 1998-10-15 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JPH04245424A (ja) * | 1991-01-30 | 1992-09-02 | Nippon Precision Circuits Kk | 半導体装置の製造方法 |
| WO1997013273A1 (en) * | 1995-10-04 | 1997-04-10 | Intel Corporation | Formation of source/drain from doped glass |
| JPWO2014064873A1 (ja) * | 2012-10-22 | 2016-09-08 | シャープ株式会社 | 半導体装置の製造方法 |
-
1986
- 1986-05-14 JP JP11189886A patent/JPS62266829A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62266829A (ja) | 1987-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |