JPH0464456B2 - - Google Patents

Info

Publication number
JPH0464456B2
JPH0464456B2 JP59281563A JP28156384A JPH0464456B2 JP H0464456 B2 JPH0464456 B2 JP H0464456B2 JP 59281563 A JP59281563 A JP 59281563A JP 28156384 A JP28156384 A JP 28156384A JP H0464456 B2 JPH0464456 B2 JP H0464456B2
Authority
JP
Japan
Prior art keywords
type
layer
solution
liquid phase
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59281563A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61159725A (ja
Inventor
Hiroyuki Kano
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59281563A priority Critical patent/JPS61159725A/ja
Publication of JPS61159725A publication Critical patent/JPS61159725A/ja
Publication of JPH0464456B2 publication Critical patent/JPH0464456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59281563A 1984-12-29 1984-12-29 化合物半導体液相成長法 Granted JPS61159725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Publications (2)

Publication Number Publication Date
JPS61159725A JPS61159725A (ja) 1986-07-19
JPH0464456B2 true JPH0464456B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-15

Family

ID=17640928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281563A Granted JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Country Status (1)

Country Link
JP (1) JPS61159725A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS6036970B2 (ja) * 1978-08-28 1985-08-23 日産自動車株式会社 バンパ−構造
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Also Published As

Publication number Publication date
JPS61159725A (ja) 1986-07-19

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