JPS61159725A - 化合物半導体液相成長法 - Google Patents

化合物半導体液相成長法

Info

Publication number
JPS61159725A
JPS61159725A JP59281563A JP28156384A JPS61159725A JP S61159725 A JPS61159725 A JP S61159725A JP 59281563 A JP59281563 A JP 59281563A JP 28156384 A JP28156384 A JP 28156384A JP S61159725 A JPS61159725 A JP S61159725A
Authority
JP
Japan
Prior art keywords
type
layer
solution
liquid phase
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59281563A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464456B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroyuki Kano
浩之 加納
Masafumi Hashimoto
雅文 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59281563A priority Critical patent/JPS61159725A/ja
Publication of JPS61159725A publication Critical patent/JPS61159725A/ja
Publication of JPH0464456B2 publication Critical patent/JPH0464456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59281563A 1984-12-29 1984-12-29 化合物半導体液相成長法 Granted JPS61159725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Publications (2)

Publication Number Publication Date
JPS61159725A true JPS61159725A (ja) 1986-07-19
JPH0464456B2 JPH0464456B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-15

Family

ID=17640928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281563A Granted JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Country Status (1)

Country Link
JP (1) JPS61159725A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Also Published As

Publication number Publication date
JPH0464456B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-15

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