JPH0462178B2 - - Google Patents
Info
- Publication number
- JPH0462178B2 JPH0462178B2 JP57021144A JP2114482A JPH0462178B2 JP H0462178 B2 JPH0462178 B2 JP H0462178B2 JP 57021144 A JP57021144 A JP 57021144A JP 2114482 A JP2114482 A JP 2114482A JP H0462178 B2 JPH0462178 B2 JP H0462178B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- poly
- semiconductor region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 31
- 238000000034 method Methods 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 9
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57021144A JPS58139442A (ja) | 1982-02-15 | 1982-02-15 | 半導体装置の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57021144A JPS58139442A (ja) | 1982-02-15 | 1982-02-15 | 半導体装置の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139442A JPS58139442A (ja) | 1983-08-18 |
| JPH0462178B2 true JPH0462178B2 (de) | 1992-10-05 |
Family
ID=12046696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57021144A Granted JPS58139442A (ja) | 1982-02-15 | 1982-02-15 | 半導体装置の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139442A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376366A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 半導体記憶装置とその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128861A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor integrated circuit device and method of fabricating the same |
| JPS5642367A (en) * | 1979-09-14 | 1981-04-20 | Toshiba Corp | Manufacture of bipolar integrated circuit |
-
1982
- 1982-02-15 JP JP57021144A patent/JPS58139442A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128861A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor integrated circuit device and method of fabricating the same |
| JPS5642367A (en) * | 1979-09-14 | 1981-04-20 | Toshiba Corp | Manufacture of bipolar integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58139442A (ja) | 1983-08-18 |
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