JPH0462174B2 - - Google Patents

Info

Publication number
JPH0462174B2
JPH0462174B2 JP57171462A JP17146282A JPH0462174B2 JP H0462174 B2 JPH0462174 B2 JP H0462174B2 JP 57171462 A JP57171462 A JP 57171462A JP 17146282 A JP17146282 A JP 17146282A JP H0462174 B2 JPH0462174 B2 JP H0462174B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
tft
film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57171462A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961183A (ja
Inventor
Toshihiko Mano
Toshimoto Kodaira
Hiroyuki Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP57171462A priority Critical patent/JPS5961183A/ja
Publication of JPS5961183A publication Critical patent/JPS5961183A/ja
Publication of JPH0462174B2 publication Critical patent/JPH0462174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
JP57171462A 1982-09-30 1982-09-30 薄膜トランジスタの製造方法 Granted JPS5961183A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57171462A JPS5961183A (ja) 1982-09-30 1982-09-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57171462A JPS5961183A (ja) 1982-09-30 1982-09-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5961183A JPS5961183A (ja) 1984-04-07
JPH0462174B2 true JPH0462174B2 (cs) 1992-10-05

Family

ID=15923553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57171462A Granted JPS5961183A (ja) 1982-09-30 1982-09-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5961183A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPH07120635B2 (ja) * 1986-12-26 1995-12-20 株式会社東芝 半導体装置の製造方法
JPH0391932A (ja) * 1989-09-04 1991-04-17 Canon Inc 半導体装置の製造方法
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor

Also Published As

Publication number Publication date
JPS5961183A (ja) 1984-04-07

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