JPH0458168B2 - - Google Patents
Info
- Publication number
- JPH0458168B2 JPH0458168B2 JP58214499A JP21449983A JPH0458168B2 JP H0458168 B2 JPH0458168 B2 JP H0458168B2 JP 58214499 A JP58214499 A JP 58214499A JP 21449983 A JP21449983 A JP 21449983A JP H0458168 B2 JPH0458168 B2 JP H0458168B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- resist film
- resist
- pattern forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214499A JPS60106132A (ja) | 1983-11-15 | 1983-11-15 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214499A JPS60106132A (ja) | 1983-11-15 | 1983-11-15 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60106132A JPS60106132A (ja) | 1985-06-11 |
| JPH0458168B2 true JPH0458168B2 (ko) | 1992-09-16 |
Family
ID=16656717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58214499A Granted JPS60106132A (ja) | 1983-11-15 | 1983-11-15 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60106132A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000771A1 (en) | 1991-06-27 | 1993-01-07 | Nippon Hoso Kyokai | Sub-sampling transmission system for improving transmitted picture quality in time-varying picture region of wide-band color picture signal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636134A (en) * | 1979-09-03 | 1981-04-09 | Oki Electric Ind Co Ltd | Forming method for pattern of semiconductor substrate |
| JPS5834921A (ja) * | 1981-08-27 | 1983-03-01 | Nec Corp | 半導体装置の製造方法 |
-
1983
- 1983-11-15 JP JP58214499A patent/JPS60106132A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636134A (en) * | 1979-09-03 | 1981-04-09 | Oki Electric Ind Co Ltd | Forming method for pattern of semiconductor substrate |
| JPS5834921A (ja) * | 1981-08-27 | 1983-03-01 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60106132A (ja) | 1985-06-11 |
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