JPH0455531B2 - - Google Patents
Info
- Publication number
- JPH0455531B2 JPH0455531B2 JP61314164A JP31416486A JPH0455531B2 JP H0455531 B2 JPH0455531 B2 JP H0455531B2 JP 61314164 A JP61314164 A JP 61314164A JP 31416486 A JP31416486 A JP 31416486A JP H0455531 B2 JPH0455531 B2 JP H0455531B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- amorphous alloy
- semiconductor device
- lead wire
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 22
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000007747 plating Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61314164A JPS63168031A (ja) | 1986-12-29 | 1986-12-29 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61314164A JPS63168031A (ja) | 1986-12-29 | 1986-12-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63168031A JPS63168031A (ja) | 1988-07-12 |
JPH0455531B2 true JPH0455531B2 (enrdf_load_stackoverflow) | 1992-09-03 |
Family
ID=18050012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61314164A Granted JPS63168031A (ja) | 1986-12-29 | 1986-12-29 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63168031A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2201545B (en) * | 1987-01-30 | 1991-09-11 | Tanaka Electronics Ind | Method for connecting semiconductor material |
JP3407275B2 (ja) | 1998-10-28 | 2003-05-19 | インターナショナル・ビジネス・マシーンズ・コーポレーション | バンプ及びその形成方法 |
US7271497B2 (en) * | 2003-03-10 | 2007-09-18 | Fairchild Semiconductor Corporation | Dual metal stud bumping for flip chip applications |
-
1986
- 1986-12-29 JP JP61314164A patent/JPS63168031A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63168031A (ja) | 1988-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4750666A (en) | Method of fabricating gold bumps on IC's and power chips | |
US5514912A (en) | Method for connecting semiconductor material and semiconductor device used in connecting method | |
US5186381A (en) | Semiconductor chip bonding process | |
EP0435009B1 (en) | Semiconductor package connecting method and semiconductor package connecting wires | |
TW490773B (en) | Semiconductor device and its manufacture method | |
US20050248027A1 (en) | Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface | |
EP1037277B1 (en) | Lead frame and method of fabricating a lead frame | |
JPH0455531B2 (enrdf_load_stackoverflow) | ||
US5935719A (en) | Lead-free, nickel-free and cyanide-free plating finish for semiconductor leadframes | |
JPH0565051B2 (enrdf_load_stackoverflow) | ||
US20050133571A1 (en) | Flip-chip solder bump formation using a wirebonder apparatus | |
JPH0565052B2 (enrdf_load_stackoverflow) | ||
JP3470245B2 (ja) | バンプ形成用金属粒 | |
JPH0465534B2 (enrdf_load_stackoverflow) | ||
JPH02312240A (ja) | バンプ形成方法およびバンプ形成装置およびバンプ | |
JPS61181136A (ja) | ダイボンデイング方法 | |
JPS63304587A (ja) | 電気的接続接点の形成方法 | |
JPS638136Y2 (enrdf_load_stackoverflow) | ||
JPH04127547A (ja) | Lsi実装構造体 | |
JP3032789B2 (ja) | 超伝導装置 | |
JPH07122562A (ja) | バンプ形成方法及びワイヤボンディング方法並びにバンプ構造及びワイヤボンディング構造 | |
JPH0732170B2 (ja) | 半導体装置 | |
JPH061779B2 (ja) | 半導体装置の製造方法 | |
JPS647630A (en) | Bonding structure of semiconductor device | |
JPH0656860B2 (ja) | 超電導装置 |