JPH0454978B2 - - Google Patents

Info

Publication number
JPH0454978B2
JPH0454978B2 JP57214468A JP21446882A JPH0454978B2 JP H0454978 B2 JPH0454978 B2 JP H0454978B2 JP 57214468 A JP57214468 A JP 57214468A JP 21446882 A JP21446882 A JP 21446882A JP H0454978 B2 JPH0454978 B2 JP H0454978B2
Authority
JP
Japan
Prior art keywords
insulating film
input
protection resistor
diffusion layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57214468A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59104171A (ja
Inventor
Ryuhei Myagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP57214468A priority Critical patent/JPS59104171A/ja
Publication of JPS59104171A publication Critical patent/JPS59104171A/ja
Publication of JPH0454978B2 publication Critical patent/JPH0454978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57214468A 1982-12-06 1982-12-06 半導体装置 Granted JPS59104171A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57214468A JPS59104171A (ja) 1982-12-06 1982-12-06 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57214468A JPS59104171A (ja) 1982-12-06 1982-12-06 半導体装置

Publications (2)

Publication Number Publication Date
JPS59104171A JPS59104171A (ja) 1984-06-15
JPH0454978B2 true JPH0454978B2 (de) 1992-09-01

Family

ID=16656217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57214468A Granted JPS59104171A (ja) 1982-12-06 1982-12-06 半導体装置

Country Status (1)

Country Link
JP (1) JPS59104171A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
US4893212A (en) * 1988-12-20 1990-01-09 North American Philips Corp. Protection of power integrated circuits against load voltage surges
JP2843393B2 (ja) * 1989-12-29 1999-01-06 沖電気工業株式会社 多値レベル出力回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51886A (ja) * 1974-06-20 1976-01-07 Sony Corp Teikososhi
JPS55110069A (en) * 1979-02-16 1980-08-25 Hitachi Ltd Semiconductor memory device
JPS55141748A (en) * 1979-04-20 1980-11-05 Sony Corp Thin film resistor for mos field effect transistor
JPS56146277A (en) * 1980-04-15 1981-11-13 Toshiba Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51886A (ja) * 1974-06-20 1976-01-07 Sony Corp Teikososhi
JPS55110069A (en) * 1979-02-16 1980-08-25 Hitachi Ltd Semiconductor memory device
JPS55141748A (en) * 1979-04-20 1980-11-05 Sony Corp Thin film resistor for mos field effect transistor
JPS56146277A (en) * 1980-04-15 1981-11-13 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS59104171A (ja) 1984-06-15

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