JPH0453106B2 - - Google Patents

Info

Publication number
JPH0453106B2
JPH0453106B2 JP60136405A JP13640585A JPH0453106B2 JP H0453106 B2 JPH0453106 B2 JP H0453106B2 JP 60136405 A JP60136405 A JP 60136405A JP 13640585 A JP13640585 A JP 13640585A JP H0453106 B2 JPH0453106 B2 JP H0453106B2
Authority
JP
Japan
Prior art keywords
layer
base
emitter
collector
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60136405A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61294858A (ja
Inventor
Kazuo Eda
Masaki Inada
Toshimichi Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60136405A priority Critical patent/JPS61294858A/ja
Priority to DE8686304785T priority patent/DE3682959D1/de
Priority to EP86304785A priority patent/EP0206787B1/en
Publication of JPS61294858A publication Critical patent/JPS61294858A/ja
Priority to US07/048,470 priority patent/US4746626A/en
Publication of JPH0453106B2 publication Critical patent/JPH0453106B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60136405A 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法 Granted JPS61294858A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60136405A JPS61294858A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法
DE8686304785T DE3682959D1 (de) 1985-06-21 1986-06-20 Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
EP86304785A EP0206787B1 (en) 1985-06-21 1986-06-20 Heterojunction bipolar transistor and method of manufacturing same
US07/048,470 US4746626A (en) 1985-06-21 1987-05-08 Method of manufacturing heterojunction bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60136405A JPS61294858A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61294858A JPS61294858A (ja) 1986-12-25
JPH0453106B2 true JPH0453106B2 (enrdf_load_stackoverflow) 1992-08-25

Family

ID=15174393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60136405A Granted JPS61294858A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61294858A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS61294858A (ja) 1986-12-25

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