JPH0452613B2 - - Google Patents

Info

Publication number
JPH0452613B2
JPH0452613B2 JP58160355A JP16035583A JPH0452613B2 JP H0452613 B2 JPH0452613 B2 JP H0452613B2 JP 58160355 A JP58160355 A JP 58160355A JP 16035583 A JP16035583 A JP 16035583A JP H0452613 B2 JPH0452613 B2 JP H0452613B2
Authority
JP
Japan
Prior art keywords
workpiece
dry etching
substrate
etching method
synchrotron orbital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58160355A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6053025A (ja
Inventor
Kozo Mochiji
Takeshi Kimura
Hidehito Oohayashi
Akihiko Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58160355A priority Critical patent/JPS6053025A/ja
Publication of JPS6053025A publication Critical patent/JPS6053025A/ja
Publication of JPH0452613B2 publication Critical patent/JPH0452613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/267—

Landscapes

  • Drying Of Semiconductors (AREA)
JP58160355A 1983-09-02 1983-09-02 ドライエツチング方法 Granted JPS6053025A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58160355A JPS6053025A (ja) 1983-09-02 1983-09-02 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160355A JPS6053025A (ja) 1983-09-02 1983-09-02 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS6053025A JPS6053025A (ja) 1985-03-26
JPH0452613B2 true JPH0452613B2 (cg-RX-API-DMAC10.html) 1992-08-24

Family

ID=15713179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160355A Granted JPS6053025A (ja) 1983-09-02 1983-09-02 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS6053025A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2709058B2 (ja) * 1987-02-16 1998-02-04 日本電信電話株式会社 光ドライエツチング装置及び方法
JPH02225680A (ja) * 1989-02-27 1990-09-07 Nippon Telegr & Teleph Corp <Ntt> 光励起エッチング法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116077A (en) * 1977-03-22 1978-10-11 Hitachi Ltd Etching method
JPS56147438A (en) * 1980-04-16 1981-11-16 Fujitsu Ltd Microplasma treatment apparatus

Also Published As

Publication number Publication date
JPS6053025A (ja) 1985-03-26

Similar Documents

Publication Publication Date Title
JP2932650B2 (ja) 微細構造物の製造方法
US4620898A (en) Ion beam sputter etching
US5041361A (en) Oxygen ion-beam microlithography
JPS61154031A (ja) 基板表面上にサブミクロン構造体を形成する方法
KR100590575B1 (ko) 새로운 물질을 이용한 전자빔 리소그래피 방법
EP0321144A2 (en) Patterning method in the manufacture of miniaturized devices
JP3271616B2 (ja) 電子線露光用マスク及びその製造方法
JPH0452613B2 (cg-RX-API-DMAC10.html)
JPH0466345B2 (cg-RX-API-DMAC10.html)
JPS6031909B2 (ja) エツチング加工法
EP0518545A1 (en) Dry lithographic etching with gaseous mixtures of oxygen and chlorine
JPS62106625A (ja) 露光マスク
JPS62232927A (ja) ドライエツチング方法及び装置
US4368215A (en) High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
JP3078164B2 (ja) 微細加工方法
JPS61203642A (ja) ドライエツチング方法
JP2699196B2 (ja) Ｘ線露光用マスクの製造方法
JP2899542B2 (ja) 転写マスクの製造方法
JPH1078667A (ja) 微細加工方法
JPH02976A (ja) 微細パターン形成方法
JPH10274700A (ja) 超微細加工方法
JPS6060725A (ja) パタ−ン形成方法
JPH05263218A (ja) 電子線レジスト及びその製造方法
JPH0366656B2 (cg-RX-API-DMAC10.html)
JP3286425B2 (ja) 微細パターンの形成方法