JPH0449516B2 - - Google Patents
Info
- Publication number
- JPH0449516B2 JPH0449516B2 JP13271584A JP13271584A JPH0449516B2 JP H0449516 B2 JPH0449516 B2 JP H0449516B2 JP 13271584 A JP13271584 A JP 13271584A JP 13271584 A JP13271584 A JP 13271584A JP H0449516 B2 JPH0449516 B2 JP H0449516B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- magnetic pole
- control
- magnetic
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
- 230000004907 flux Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000002123 temporal effect Effects 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13271584A JPS6114194A (ja) | 1984-06-27 | 1984-06-27 | マグネトロンスパッタ装置及び化合物単結晶膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13271584A JPS6114194A (ja) | 1984-06-27 | 1984-06-27 | マグネトロンスパッタ装置及び化合物単結晶膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6114194A JPS6114194A (ja) | 1986-01-22 |
| JPH0449516B2 true JPH0449516B2 (enExample) | 1992-08-11 |
Family
ID=15087883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13271584A Granted JPS6114194A (ja) | 1984-06-27 | 1984-06-27 | マグネトロンスパッタ装置及び化合物単結晶膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6114194A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2690909B2 (ja) * | 1987-10-05 | 1997-12-17 | 株式会社日立製作所 | マグネトロンスパッタ装置、及びその装置による成膜方法 |
| US5736019A (en) * | 1996-03-07 | 1998-04-07 | Bernick; Mark A. | Sputtering cathode |
| US7223322B2 (en) * | 2002-07-22 | 2007-05-29 | Angstrom Sciences, Inc. | Moving magnetic/cathode arrangement and method |
| JP4807120B2 (ja) * | 2006-03-23 | 2011-11-02 | アイシン精機株式会社 | 超電導磁場発生装置及びスパッタリング成膜装置 |
| US8398834B2 (en) * | 2010-04-02 | 2013-03-19 | NuvoSun, Inc. | Target utilization improvement for rotatable magnetrons |
| CN112725750B (zh) * | 2020-12-12 | 2022-02-11 | 河南大学 | 利用磁控溅射技术制备bvo外延单晶薄膜的方法 |
-
1984
- 1984-06-27 JP JP13271584A patent/JPS6114194A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6114194A (ja) | 1986-01-22 |
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