JPH0449054B2 - - Google Patents

Info

Publication number
JPH0449054B2
JPH0449054B2 JP56024833A JP2483381A JPH0449054B2 JP H0449054 B2 JPH0449054 B2 JP H0449054B2 JP 56024833 A JP56024833 A JP 56024833A JP 2483381 A JP2483381 A JP 2483381A JP H0449054 B2 JPH0449054 B2 JP H0449054B2
Authority
JP
Japan
Prior art keywords
electrode
detection
voltage
charge
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56024833A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56133628A (en
Inventor
Eichi Booraa Kurihoodo
Jei Uiruwaadeingu Denisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of JPS56133628A publication Critical patent/JPS56133628A/ja
Publication of JPH0449054B2 publication Critical patent/JPH0449054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/71—Circuitry for evaluating the brightness variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
JP2483381A 1980-02-22 1981-02-20 Method of and apparatus for detecting electromagnetic radiant rays and picking up signal thereof Granted JPS56133628A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/123,636 US4321486A (en) 1980-02-22 1980-02-22 Photodetector signal control in charge transfer device imager

Publications (2)

Publication Number Publication Date
JPS56133628A JPS56133628A (en) 1981-10-19
JPH0449054B2 true JPH0449054B2 (en, 2012) 1992-08-10

Family

ID=22409883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2483381A Granted JPS56133628A (en) 1980-02-22 1981-02-20 Method of and apparatus for detecting electromagnetic radiant rays and picking up signal thereof

Country Status (6)

Country Link
US (1) US4321486A (en, 2012)
JP (1) JPS56133628A (en, 2012)
CA (1) CA1164555A (en, 2012)
DE (1) DE3105910A1 (en, 2012)
FR (1) FR2476916A1 (en, 2012)
GB (1) GB2070332B (en, 2012)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56154880A (en) * 1980-04-30 1981-11-30 Toshiba Corp Solid-state image sensor
JPS5737888A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Photo detector
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
JPS5793782A (en) * 1980-12-02 1982-06-10 Canon Inc Solid-state image pickup device having storage time controlling function
US4488163A (en) * 1981-01-19 1984-12-11 Westinghouse Electric Corp. Highly isolated photodetectors
GB8219853D0 (en) * 1982-07-14 1995-04-12 British Aerospace Image sensing
JPS60254770A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd イメージセンサ
US4684798A (en) * 1985-10-03 1987-08-04 Honeywell Inc. Performance improvement for camera autofocus
DE69129008T2 (de) * 1990-07-02 1998-08-20 Varian Associates Röntgenstrahlentherapiesimulator
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721904B2 (en, 2012) * 1973-10-03 1982-05-10
JPS5339211B2 (en, 2012) * 1973-10-26 1978-10-20
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
US4087833A (en) * 1977-01-03 1978-05-02 Reticon Corporation Interlaced photodiode array employing analog shift registers
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4271240A (en) * 1977-12-27 1981-06-02 Braun Engineering Company Lobed preparatory blank for cold extruding a cup-shaped article with hollow polygonal interior
JPS54154382A (en) * 1978-05-25 1979-12-05 Canon Inc Photo sensor device

Also Published As

Publication number Publication date
DE3105910C2 (en, 2012) 1989-09-28
FR2476916B1 (en, 2012) 1985-03-29
GB2070332A (en) 1981-09-03
US4321486A (en) 1982-03-23
CA1164555A (en) 1984-03-27
GB2070332B (en) 1984-01-04
JPS56133628A (en) 1981-10-19
FR2476916A1 (fr) 1981-08-28
DE3105910A1 (de) 1981-12-24

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