CA1164555A - Photodetector signal control - Google Patents
Photodetector signal controlInfo
- Publication number
- CA1164555A CA1164555A CA000366767A CA366767A CA1164555A CA 1164555 A CA1164555 A CA 1164555A CA 000366767 A CA000366767 A CA 000366767A CA 366767 A CA366767 A CA 366767A CA 1164555 A CA1164555 A CA 1164555A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- electrode
- sensor electrode
- regions
- material body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 39
- 238000012544 monitoring process Methods 0.000 claims abstract description 9
- 230000004044 response Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000012546 transfer Methods 0.000 claims description 42
- 230000005855 radiation Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 11
- 238000005304 joining Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 6
- 229940035564 duration Drugs 0.000 claims 1
- 238000005070 sampling Methods 0.000 abstract description 15
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000001934 delay Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 15
- 239000000523 sample Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 235000003625 Acrocomia mexicana Nutrition 0.000 description 1
- 244000202285 Acrocomia mexicana Species 0.000 description 1
- 241001415166 Alona Species 0.000 description 1
- 241001502381 Budorcas taxicolor Species 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 101150087426 Gnal gene Proteins 0.000 description 1
- 101150046062 NCDN gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000950638 Symphysodon discus Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- SYOKIDBDQMKNDQ-XWTIBIIYSA-N vildagliptin Chemical compound C1C(O)(C2)CC(C3)CC1CC32NCC(=O)N1CCC[C@H]1C#N SYOKIDBDQMKNDQ-XWTIBIIYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US123,636 | 1980-02-22 | ||
US06/123,636 US4321486A (en) | 1980-02-22 | 1980-02-22 | Photodetector signal control in charge transfer device imager |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1164555A true CA1164555A (en) | 1984-03-27 |
Family
ID=22409883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000366767A Expired CA1164555A (en) | 1980-02-22 | 1980-12-15 | Photodetector signal control |
Country Status (6)
Country | Link |
---|---|
US (1) | US4321486A (en, 2012) |
JP (1) | JPS56133628A (en, 2012) |
CA (1) | CA1164555A (en, 2012) |
DE (1) | DE3105910A1 (en, 2012) |
FR (1) | FR2476916A1 (en, 2012) |
GB (1) | GB2070332B (en, 2012) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56154880A (en) * | 1980-04-30 | 1981-11-30 | Toshiba Corp | Solid-state image sensor |
JPS5737888A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Photo detector |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
JPS5793782A (en) * | 1980-12-02 | 1982-06-10 | Canon Inc | Solid-state image pickup device having storage time controlling function |
US4488163A (en) * | 1981-01-19 | 1984-12-11 | Westinghouse Electric Corp. | Highly isolated photodetectors |
GB8219853D0 (en) * | 1982-07-14 | 1995-04-12 | British Aerospace | Image sensing |
JPS60254770A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | イメージセンサ |
US4684798A (en) * | 1985-10-03 | 1987-08-04 | Honeywell Inc. | Performance improvement for camera autofocus |
DE69129008T2 (de) * | 1990-07-02 | 1998-08-20 | Varian Associates | Röntgenstrahlentherapiesimulator |
US5436476A (en) * | 1993-04-14 | 1995-07-25 | Texas Instruments Incorporated | CCD image sensor with active transistor pixel |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721904B2 (en, 2012) * | 1973-10-03 | 1982-05-10 | ||
JPS5339211B2 (en, 2012) * | 1973-10-26 | 1978-10-20 | ||
US3931463A (en) * | 1974-07-23 | 1976-01-06 | Rca Corporation | Scene brightness compensation system with charge transfer imager |
US4087833A (en) * | 1977-01-03 | 1978-05-02 | Reticon Corporation | Interlaced photodiode array employing analog shift registers |
US4139784A (en) * | 1977-08-02 | 1979-02-13 | Rca Corporation | CCD Input circuits |
US4271240A (en) * | 1977-12-27 | 1981-06-02 | Braun Engineering Company | Lobed preparatory blank for cold extruding a cup-shaped article with hollow polygonal interior |
JPS54154382A (en) * | 1978-05-25 | 1979-12-05 | Canon Inc | Photo sensor device |
-
1980
- 1980-02-22 US US06/123,636 patent/US4321486A/en not_active Expired - Lifetime
- 1980-12-15 CA CA000366767A patent/CA1164555A/en not_active Expired
-
1981
- 1981-02-17 GB GB8104947A patent/GB2070332B/en not_active Expired
- 1981-02-18 DE DE19813105910 patent/DE3105910A1/de active Granted
- 1981-02-20 JP JP2483381A patent/JPS56133628A/ja active Granted
- 1981-02-20 FR FR8103453A patent/FR2476916A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3105910C2 (en, 2012) | 1989-09-28 |
FR2476916B1 (en, 2012) | 1985-03-29 |
GB2070332A (en) | 1981-09-03 |
US4321486A (en) | 1982-03-23 |
GB2070332B (en) | 1984-01-04 |
JPS56133628A (en) | 1981-10-19 |
FR2476916A1 (fr) | 1981-08-28 |
JPH0449054B2 (en, 2012) | 1992-08-10 |
DE3105910A1 (de) | 1981-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry | ||
MKEX | Expiry |
Effective date: 20010327 |