JPH0447466B2 - - Google Patents

Info

Publication number
JPH0447466B2
JPH0447466B2 JP57147357A JP14735782A JPH0447466B2 JP H0447466 B2 JPH0447466 B2 JP H0447466B2 JP 57147357 A JP57147357 A JP 57147357A JP 14735782 A JP14735782 A JP 14735782A JP H0447466 B2 JPH0447466 B2 JP H0447466B2
Authority
JP
Japan
Prior art keywords
film
transparent conductive
conductive film
laser
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57147357A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935489A (ja
Inventor
Toshiaki Yokoo
Takashi Shibuya
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57147357A priority Critical patent/JPS5935489A/ja
Publication of JPS5935489A publication Critical patent/JPS5935489A/ja
Publication of JPH0447466B2 publication Critical patent/JPH0447466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57147357A 1982-08-24 1982-08-24 光半導体装置の製造方法 Granted JPS5935489A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57147357A JPS5935489A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147357A JPS5935489A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3300520A Division JP2648064B2 (ja) 1991-11-15 1991-11-15 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5935489A JPS5935489A (ja) 1984-02-27
JPH0447466B2 true JPH0447466B2 (enrdf_load_stackoverflow) 1992-08-04

Family

ID=15428363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147357A Granted JPS5935489A (ja) 1982-08-24 1982-08-24 光半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5935489A (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182757A (ja) * 1984-02-29 1985-09-18 Kanegafuchi Chem Ind Co Ltd 集積型太陽電池
JPH0650781B2 (ja) * 1984-06-29 1994-06-29 三洋電機株式会社 半導体装置の製造方法
JPS6142971A (ja) * 1984-08-06 1986-03-01 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS616828A (ja) * 1984-06-20 1986-01-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US4668840A (en) * 1984-06-29 1987-05-26 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6174376A (ja) * 1984-09-19 1986-04-16 Fuji Electric Co Ltd 薄膜光起電力素子の製造方法
JPH0624198B2 (ja) * 1984-10-29 1994-03-30 株式会社半導体エネルギー研究所 光加工方法
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS6265479A (ja) * 1985-09-18 1987-03-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JP2820466B2 (ja) * 1989-11-13 1998-11-05 三菱重工業株式会社 光起電力発生装置の製造方法
JP2648064B2 (ja) * 1991-11-15 1997-08-27 三洋電機株式会社 光半導体装置の製造方法
GB2459274A (en) * 2008-04-15 2009-10-21 Renewable Energy Corp Asa Wafer based solar panels
CN102612756A (zh) * 2010-03-18 2012-07-25 富士电机株式会社 薄膜太阳能电池和其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52108780A (en) * 1976-03-08 1977-09-12 Seiko Epson Corp Manufacture for solar cell

Also Published As

Publication number Publication date
JPS5935489A (ja) 1984-02-27

Similar Documents

Publication Publication Date Title
JP3436858B2 (ja) 薄膜太陽電池の製造方法
US4874920A (en) Electronic device manufacturing methods
US4181755A (en) Thin film pattern generation by an inverse self-lifting technique
US4542578A (en) Method of manufacturing photovoltaic device
JPH0447466B2 (enrdf_load_stackoverflow)
US4680855A (en) Electronic device manufacturing methods
JPH05218472A (ja) 薄膜構成体のレーザ加工方法
US4906491A (en) Semiconductor device manufacturing methods
JPH053151B2 (enrdf_load_stackoverflow)
JP2648064B2 (ja) 光半導体装置の製造方法
JP2002231986A (ja) 集積型薄膜太陽電池の製造方法
JPH0536998A (ja) 電極の形成方法
JPH0613356A (ja) 薄膜パターン形成方法
JPH0799335A (ja) 半導体膜の除去加工方法及び光起電力素子の製造方法
JP3521268B2 (ja) 光起電力装置の製造方法
JP3525048B2 (ja) 光起電力装置の製造方法
JPS6276786A (ja) 光起電力装置の製造方法
JPS61280680A (ja) 半導体装置の製造方法
JPH053150B2 (enrdf_load_stackoverflow)
JP3505201B2 (ja) 光起電力装置の製造方法
JPH06163959A (ja) 透光性導電酸化物膜の分離形成方法
JP3208219B2 (ja) 光起電力装置
JPH0370184A (ja) 光起電力装置の製造方法
JPS60262471A (ja) 光起電力装置の製造方法
JPH02295132A (ja) 薄膜トランジスタの製造方法