JPH0445972B2 - - Google Patents

Info

Publication number
JPH0445972B2
JPH0445972B2 JP58079019A JP7901983A JPH0445972B2 JP H0445972 B2 JPH0445972 B2 JP H0445972B2 JP 58079019 A JP58079019 A JP 58079019A JP 7901983 A JP7901983 A JP 7901983A JP H0445972 B2 JPH0445972 B2 JP H0445972B2
Authority
JP
Japan
Prior art keywords
transparent electrode
electrode material
amorphous silicon
kinetic energy
photoconductive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58079019A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59204282A (ja
Inventor
Yoshio Furuya
Hisao Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58079019A priority Critical patent/JPS59204282A/ja
Publication of JPS59204282A publication Critical patent/JPS59204282A/ja
Publication of JPH0445972B2 publication Critical patent/JPH0445972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
JP58079019A 1983-05-06 1983-05-06 薄膜形成方法および薄膜形成装置 Granted JPS59204282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58079019A JPS59204282A (ja) 1983-05-06 1983-05-06 薄膜形成方法および薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58079019A JPS59204282A (ja) 1983-05-06 1983-05-06 薄膜形成方法および薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS59204282A JPS59204282A (ja) 1984-11-19
JPH0445972B2 true JPH0445972B2 (enrdf_load_stackoverflow) 1992-07-28

Family

ID=13678226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58079019A Granted JPS59204282A (ja) 1983-05-06 1983-05-06 薄膜形成方法および薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS59204282A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745356B2 (ja) * 1989-12-28 1995-05-17 株式会社島津製作所 薄膜製造方法
JP5942476B2 (ja) * 2012-02-29 2016-06-29 沖電気工業株式会社 発光素子における透明電極の製造方法
JP2014110300A (ja) * 2012-11-30 2014-06-12 Nichia Chem Ind Ltd 半導体発光素子の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100075A (enrdf_load_stackoverflow) * 1972-03-29 1973-12-18
JPS57208180A (en) * 1981-06-17 1982-12-21 Hitachi Ltd Manufacture of photoconductive film

Also Published As

Publication number Publication date
JPS59204282A (ja) 1984-11-19

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