JPH0211011B2 - - Google Patents

Info

Publication number
JPH0211011B2
JPH0211011B2 JP58240723A JP24072383A JPH0211011B2 JP H0211011 B2 JPH0211011 B2 JP H0211011B2 JP 58240723 A JP58240723 A JP 58240723A JP 24072383 A JP24072383 A JP 24072383A JP H0211011 B2 JPH0211011 B2 JP H0211011B2
Authority
JP
Japan
Prior art keywords
film
transparent conductive
target
silicon layer
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58240723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60132319A (ja
Inventor
Hisao Ito
Yoshio Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP58240723A priority Critical patent/JPS60132319A/ja
Publication of JPS60132319A publication Critical patent/JPS60132319A/ja
Publication of JPH0211011B2 publication Critical patent/JPH0211011B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
JP58240723A 1983-12-20 1983-12-20 薄膜形成方法 Granted JPS60132319A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58240723A JPS60132319A (ja) 1983-12-20 1983-12-20 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58240723A JPS60132319A (ja) 1983-12-20 1983-12-20 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS60132319A JPS60132319A (ja) 1985-07-15
JPH0211011B2 true JPH0211011B2 (enrdf_load_stackoverflow) 1990-03-12

Family

ID=17063741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58240723A Granted JPS60132319A (ja) 1983-12-20 1983-12-20 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS60132319A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216112A (ja) * 1986-03-11 1987-09-22 田崎　明 透明導電膜の製造方法
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440073A (en) * 1977-09-05 1979-03-28 Matsushita Electric Ind Co Ltd Film forming method
JPS5616671A (en) * 1979-07-17 1981-02-17 Fujitsu Ltd Sputtering apparatus
DE3069702D1 (en) * 1980-08-08 1985-01-10 Battelle Development Corp Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
DE3371439D1 (en) * 1982-01-26 1987-06-11 Materials Research Corp Magnetron reactive bias sputtering method and apparatus

Also Published As

Publication number Publication date
JPS60132319A (ja) 1985-07-15

Similar Documents

Publication Publication Date Title
GB1588452A (en) Devices including a layer of amorphous silicon
JPS6091626A (ja) アモルフアスシリコンｐｉｎ半導体装置の製造方法
JP4429418B2 (ja) マグネトロンスパッタ装置による金属酸化物薄膜の成膜方法
JPH07224379A (ja) スパッタ方法およびそのスパッタ装置
JP3697190B2 (ja) 太陽電池
JPH0772346B2 (ja) 低抵抗透明導電膜の製造方法
JPH09246577A (ja) 太陽電池の金属電極形成方法
JP3615647B2 (ja) 透明導電膜の製造方法およびその透明導電膜
WO2009084527A1 (ja) 太陽電池の製造方法及び太陽電池
JP2009021607A (ja) 透明導電性酸化物コーティングの製造方法
JPH0211011B2 (enrdf_load_stackoverflow)
JPH01187983A (ja) フォトダイオードの製造方法
JP4229803B2 (ja) 透明導電膜の製造方法
US4266984A (en) Enhanced open circuit voltage in amorphous silicon photovoltaic devices
JP3478561B2 (ja) スパッタ成膜方法
JP3261049B2 (ja) スパッタリング成膜方法
JPS61292817A (ja) 透明電導性金属酸化物膜の形成方法
TW200937661A (en) Solar cell manufacturing method
JPH0445972B2 (enrdf_load_stackoverflow)
JPH08107225A (ja) 薄膜太陽電池の製造方法
JP2841213B2 (ja) 太陽電池用基板の製造方法
JPH056286B2 (enrdf_load_stackoverflow)
JPH0978236A (ja) 酸化インジウム・すず透明導電膜の成膜方法
JP3679937B2 (ja) 非晶質シリコン太陽電池及びその製造方法
JPS60157269A (ja) ＧａＡｓ太陽電池およびその製造方法