JPH0445972B2 - - Google Patents
Info
- Publication number
- JPH0445972B2 JPH0445972B2 JP58079019A JP7901983A JPH0445972B2 JP H0445972 B2 JPH0445972 B2 JP H0445972B2 JP 58079019 A JP58079019 A JP 58079019A JP 7901983 A JP7901983 A JP 7901983A JP H0445972 B2 JPH0445972 B2 JP H0445972B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- electrode material
- amorphous silicon
- kinetic energy
- photoconductive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007772 electrode material Substances 0.000 claims description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 238000005137 deposition process Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 230000001629 suppression Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008685 targeting Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、光導電素子の製造方法に関し、特に
アモルフアスシリコン上にスパツタリング等の物
理蒸着法を用いて透明電極薄膜を形成する方法の
改良に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a photoconductive element, and in particular to an improvement in a method for forming a transparent electrode thin film on amorphous silicon using a physical vapor deposition method such as sputtering. Regarding.
［従来の技術］
従来、例えば第１図に示すような光導電素子Ｕ
が提案されている。すなわち、絶縁性基板１上に
金属膜２、光導電性半導体基体３および透明電極
薄膜４がこれらの順に積層されて構成されてい
る。半導体基体３は、例えば水素化アモルフアス
シリコンよりなり、この半導体基体３上に、例え
ば酸化インジウム錫よりなる透明電極薄膜４が、
スパツタリングのような物理蒸着法（PVD）に
よつて着膜形成されている。[Prior Art] Conventionally, for example, a photoconductive element U as shown in FIG.
is proposed. That is, a metal film 2, a photoconductive semiconductor substrate 3, and a transparent electrode thin film 4 are laminated in this order on an insulating substrate 1. The semiconductor substrate 3 is made of, for example, hydrogenated amorphous silicon, and a transparent electrode thin film 4 made of, for example, indium tin oxide is disposed on the semiconductor substrate 3.
The film is formed by a physical vapor deposition method (PVD) such as sputtering.
第２図は、上述のような半導体基体３上に透明
電極薄膜４を形成する場合に適用されるスパツタ
リング装置を概略的に示す。すなわち、陰極５上
に、透明電極材料よりなるターゲツト６が固着さ
れ、このターゲツト６と対向して、陽極となる半
導体基体３が所定の距離を隔てて配置される。 FIG. 2 schematically shows a sputtering apparatus used for forming the transparent electrode thin film 4 on the semiconductor substrate 3 as described above. That is, a target 6 made of a transparent electrode material is fixed on the cathode 5, and a semiconductor substrate 3, which will become an anode, is placed opposite the target 6 at a predetermined distance.
このような構成において、アルゴンその他の不
活性ガスを主成分とする低圧ガス中において両極
間で直流高圧グロー放電を行うと、＋イオンが発
生し、これがターゲツト６に衝突してターゲツト
６の表面の原子を叩き出す。そしてこれにより、
透明電極材料の粒子が基体３の表面３ａに付着し
て透明電極薄膜４が形成される。なお、第２図に
おいて、７はグロー放電領域を示す。 In such a configuration, when a DC high-pressure glow discharge is performed between the two electrodes in a low-pressure gas mainly composed of argon or other inert gas, positive ions are generated, which collide with the target 6 and cause damage to the surface of the target 6. Knock out atoms. And with this,
Particles of the transparent electrode material adhere to the surface 3a of the base 3 to form a transparent electrode thin film 4. In addition, in FIG. 2, 7 indicates a glow discharge area.
［発明が解決しようとする課題］
ところで上述のような従来の光導電素子の製造
方法において、基体３となるアモンフアスシリン
コン上に付着せしめられる際の透明電極材料の粒
子の運動エネルギは、一般に１〜50eV程度に設
定される。したがつて着膜工程の初期において
は、このような高い運動エネルグの粒子の衝突に
より、基体３の表面３ａが損傷を受け易くなる。[Problem to be Solved by the Invention] By the way, in the conventional method for manufacturing a photoconductive element as described above, the kinetic energy of the particles of the transparent electrode material when deposited on the Amonphas silicon serving as the base 3 is generally It is set to about 1 to 50 eV. Therefore, in the early stage of the film deposition process, the surface 3a of the substrate 3 is easily damaged by collisions of particles with such high kinetic energy.
また、こうした高い運動エネルギと粒子の衝突
は、同基体３の表面３ａにダングリングボンドの
発生を招き、ひいては界面特性を低下せしめる。 In addition, such high kinetic energy and particle collisions lead to the generation of dangling bonds on the surface 3a of the base 3, which ultimately deteriorates the interfacial properties.
このため、第１図に示すような光動電素子Ｕの
場合、透明電極薄膜４から半導体基体３、すなわ
ちアモルフアスシリコン内へキヤリアが注入され
易くなり、暗電流が増加するといつた不都合が生
じる。 For this reason, in the case of the photodynamic element U shown in FIG. 1, carriers are likely to be injected from the transparent electrode thin film 4 into the semiconductor substrate 3, that is, into the amorphous silicon, causing problems such as an increase in dark current. .
本発明は、上述の点に鑑みなされたもので、上
記物理蒸着法によつて透明電極薄膜を着膜形成す
る際に、基体となるアモルフアスシリコンの表面
が損傷を受けるのを防止することができ、ひいて
は光電変換特性に優れた光電素子を得ることので
きる光電素子の製造方法を提供することを目的と
する。 The present invention has been made in view of the above-mentioned points, and it is possible to prevent the surface of amorphous silicon serving as a base from being damaged when forming a transparent electrode thin film by the above-mentioned physical vapor deposition method. It is an object of the present invention to provide a method for manufacturing a photoelectric element, which can produce a photoelectric element with excellent photoelectric conversion characteristics.
［課題を解決するための手段］
このため本発明では、
(A) 前記透明電極を着膜形成する際の着膜工程初
期に、前記ターゲツトとする透明電極材料の近
傍に磁界を与えて、前記アモルフアスシリコン
上に付着される透明電極材料粒子の運動エネル
ギを抑制する。[Means for Solving the Problems] Therefore, in the present invention, (A) At the beginning of the film deposition process when forming the transparent electrode, a magnetic field is applied near the target transparent electrode material to Suppresses the kinetic energy of transparent electrode material particles deposited on amorphous silicon.
(B) 同着工程の初期後、前記磁界を除去若しくは
低減して、前記透明電極材料粒子の運動エネル
ギの抑制を解除する。(B) After the initial stage of the co-adhering process, the magnetic field is removed or reduced to release the suppression of the kinetic energy of the transparent electrode material particles.
といつた、大きくは２段階の操作を１回の着膜工
程に際して経時的に実行して、光導電素子の製造
を行うようにする。A photoconductive element is manufactured by performing roughly two steps of operations over time during one film deposition process.
［作用］
上記磁界の与え方を通じて、上記透明電極材料
粒子の運動エネルギが好適にコントロールされる
こととなる。特に、上記(A)の工程を通じて、該透
明電極材料粒子の運動エネルギが、前記アモルフ
アスシリコンの表面を損傷しない程度に小さく抑
制され、その後上記(B)の工程を通じて、同透明電
極材料粒子の運動エネルギが増大されることで、
アモルフアスシリコンと透明電極との界面に特性
劣化の生じない優れた光導電素子が高能率に製造
されるようになる。[Function] Through the application of the magnetic field, the kinetic energy of the transparent electrode material particles can be suitably controlled. In particular, through the step (A) above, the kinetic energy of the transparent electrode material particles is suppressed to a level that does not damage the surface of the amorphous silicon, and then through the step (B) above, the kinetic energy of the transparent electrode material particles is suppressed to a level that does not damage the surface of the amorphous silicon. By increasing the kinetic energy,
An excellent photoconductive element with no characteristic deterioration at the interface between amorphous silicon and a transparent electrode can be manufactured with high efficiency.
［実施例］ 以下本発明の実施例について詳細を説明する。[Example] Examples of the present invention will be described in detail below.
本発明は、透明電極薄膜の着膜工程初期におい
て、透明電極材料粒子の、基体（アモルフアスシ
リコン）に衝突する際の運動エネルギを抑制する
ものであるが、その抑制手法としては、基本的に
第３図ＣおよびＤとして示す方法が考えられる。 The present invention suppresses the kinetic energy of the transparent electrode material particles when they collide with the substrate (amorphous silicon) in the early stage of the process of forming a transparent electrode thin film. Methods shown as C and D in FIG. 3 are possible.
すなわち、従来は第３図Ａに示すように、例え
ば100Wの電力で短時間に薄膜を形成していたも
のとすれば、これを第３図ＣおよびＤに示すよう
に、着膜工程の初期においては例えば20Wの電力
をもつてスパツタリングを行い、これによつて厚
さ100＃程度の薄膜が形成された時点から、段階
的または連続的に電力を高めるようにする。これ
によれば、実用的な時間で、基体３の表面が損傷
を受けない優れた特性の光導電素子を製造するこ
とができるようになる。 In other words, if a thin film was conventionally formed in a short time using a power of 100 W, as shown in Figure 3A, this was changed to the initial stage of the film deposition process, as shown in Figure 3C and D. For example, sputtering is performed with a power of 20 W, and after a thin film of about 100 # thickness is formed, the power is increased stepwise or continuously. According to this, it becomes possible to manufacture a photoconductive element with excellent characteristics in which the surface of the base 3 is not damaged in a practical amount of time.
本発明では、第４図に示すマグネトロン・スパ
ツタリング装置を通じて、こうした第３図Ｃある
いはＤに対応する透明電極材料粒子の運動エネル
ギ抑制を実現する。 In the present invention, the kinetic energy of the transparent electrode material particles corresponding to FIG. 3 C or D is suppressed through the magnetron sputtering device shown in FIG. 4.
すなわち第４図に示すマグネトロン・スパツタ
リング装置にあつては、陰極５側に磁石９を配置
し、着膜工程の初期には、上記電力を抑える代わ
りに、この磁石９によつてターゲツト６の表面お
よび近傍に形成される磁場の磁束密度を大きくす
る。これによつて、当該スパツタリング装置とし
てのグロー放電領域７をターゲツト６と近傍に限
定することができ、基体３に衝突する透明電極材
料粒子の運動エネルギを抑制することができるよ
うになる。 That is, in the magnetron sputtering apparatus shown in FIG. 4, a magnet 9 is arranged on the cathode 5 side, and in the early stage of the film deposition process, instead of suppressing the above-mentioned electric power, the magnet 9 is used to spread the surface of the target 6. and increase the magnetic flux density of the magnetic field formed nearby. Thereby, the glow discharge region 7 as the sputtering device can be limited to the target 6 and the vicinity, and the kinetic energy of the transparent electrode material particles colliding with the base 3 can be suppressed.
なお参考までに、こうして発生される磁界の大
きさを、通常の200〜300ガウス600ガウスに高め
ることで、基体３としてのアモルフアスシリコン
の表面にダングリングボンドの発生を招くことな
く透明電極導膜４の着膜を行うことができ、これ
らアモルフアスシリコンと透明電極薄膜４との良
好なシヨツトキ接合が実現される光導電素子を得
ることができた。厚さ100＃程度の透明電極薄膜
が形成された時点でこうして高めた磁界を除去若
しくは低減する条件は、上述した第３図Ｃあるい
はＤでの手法と変わらない。 For reference, by increasing the magnitude of the magnetic field generated in this way to the usual 200-300 Gauss to 600 Gauss, transparent electrode conduction can be achieved without causing dangling bonds on the surface of the amorphous silicon as the base 3. The film 4 could be deposited, and a photoconductive element could be obtained in which a good shot bonding between the amorphous silicon and the transparent electrode thin film 4 was realized. The conditions for removing or reducing the increased magnetic field once a transparent electrode thin film with a thickness of about 100# is formed are the same as the method shown in FIG. 3C or D described above.
［発明の効果］
以上説明したように、本発明によれば、スパツ
タリングによる透明電極薄膜形成工程の初期にお
いて、アモルフアスシリコン上に付着せしめられ
る際の透明電極材料粒子の運動エネルギを抑制
し、その後、同運動エネルギの抑制を解除するよ
うにしたことから、アモルフアスシリコン表面へ
のダングリングボンドの発生を良好に抑制して、
透明電極薄膜から光導体基体３内へのキヤリアの
注入量の少ない、したがつて暗電流の少ない優れ
た特性の光導電素子を高能率に得ることができる
ようになる。[Effects of the Invention] As explained above, according to the present invention, the kinetic energy of transparent electrode material particles when deposited on amorphous silicon is suppressed in the initial stage of the process of forming a transparent electrode thin film by sputtering, and then Since the suppression of the kinetic energy is released, the generation of dangling bonds on the amorphous silicon surface can be suppressed well.
It becomes possible to efficiently obtain a photoconductive element with excellent characteristics in which a small amount of carrier is injected from the transparent electrode thin film into the photoconductive substrate 3, and therefore with a small dark current.
第１図は、本発明の適用される光導電素子の断
面図、第２図は第１図の光導電素子を製造する際
に用いられるスパツタリング装置の概略図、第３
図は本発明による方法を従来の方法と比較して説
明する線図、第４図は本発明の実施に適用される
スパツタリング装置の概略図である。
１……絶縁性基板、２……金属膜、３……半導
体基体であるアモルフアスシリコン、４……透明
電極薄膜、５……陰極、６……ターゲツト、７…
…グロー放電領域、９……磁石。
FIG. 1 is a sectional view of a photoconductive element to which the present invention is applied, FIG. 2 is a schematic diagram of a sputtering apparatus used in manufacturing the photoconductive element of FIG. 1, and FIG.
The figure is a diagram illustrating a method according to the present invention in comparison with a conventional method, and FIG. 4 is a schematic diagram of a sputtering apparatus applied to implement the present invention. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Metal film, 3... Amorphous silicon as a semiconductor substrate, 4... Transparent electrode thin film, 5... Cathode, 6... Target, 7...
...Glow discharge area, 9...Magnet.
Claims (1)
により、アモルフアスシリコン上に透明電極を着
膜形成して光導電素子を形成する光導電素子の製
造方法において、 前記透明電極を着膜形成する際の着膜工程初期
に、前記ターゲツトとする透明電極材料の近傍に
磁界を与えて、前記アモルフアスシリコン上に付
着される透明電極材料粒子の運動エネルギを抑制
する工程と、 同着膜工程の初期後、前記磁界を除去若くしく
は低減して、前記透明電極材料粒子の運動エネル
ギの抑制を解除する工程と、 を具える光導電素子の製造方法。[Scope of Claims] 1. A method for manufacturing a photoconductive element in which a photoconductive element is formed by depositing a transparent electrode on amorphous silicon by a physical vapor deposition method targeting a transparent electrode material, comprising: A step of suppressing the kinetic energy of the transparent electrode material particles deposited on the amorphous silicon by applying a magnetic field near the target transparent electrode material at the initial stage of the film deposition process when forming the deposited film; A method for manufacturing a photoconductive element, comprising the step of removing or reducing the magnetic field after the initial stage of the film deposition process to release suppression of the kinetic energy of the transparent electrode material particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58079019A JPS59204282A (en) | 1983-05-06 | 1983-05-06 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58079019A JPS59204282A (en) | 1983-05-06 | 1983-05-06 | Formation of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59204282A JPS59204282A (en) | 1984-11-19 |
| JPH0445972B2 true JPH0445972B2 (en) | 1992-07-28 |
Family
ID=13678226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58079019A Granted JPS59204282A (en) | 1983-05-06 | 1983-05-06 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59204282A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745356B2 (en) * | 1989-12-28 | 1995-05-17 | 株式会社島津製作所 | Thin film manufacturing method |
| JP5942476B2 (en) * | 2012-02-29 | 2016-06-29 | 沖電気工業株式会社 | Method for producing transparent electrode in light emitting device |
| JP2014110300A (en) * | 2012-11-30 | 2014-06-12 | Nichia Chem Ind Ltd | Method of manufacturing semiconductor light emitting element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48100075A (en) * | 1972-03-29 | 1973-12-18 | ||
| JPS57208180A (en) * | 1981-06-17 | 1982-12-21 | Hitachi Ltd | Manufacture of photoconductive film |
-
1983
- 1983-05-06 JP JP58079019A patent/JPS59204282A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48100075A (en) * | 1972-03-29 | 1973-12-18 | ||
| JPS57208180A (en) * | 1981-06-17 | 1982-12-21 | Hitachi Ltd | Manufacture of photoconductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59204282A (en) | 1984-11-19 |
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