KR0125868Y1 - Separable out-target structure of metal evaporator - Google Patents

Separable out-target structure of metal evaporator

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Publication number
KR0125868Y1
KR0125868Y1 KR2019910023609U KR910023609U KR0125868Y1 KR 0125868 Y1 KR0125868 Y1 KR 0125868Y1 KR 2019910023609 U KR2019910023609 U KR 2019910023609U KR 910023609 U KR910023609 U KR 910023609U KR 0125868 Y1 KR0125868 Y1 KR 0125868Y1
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South Korea
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target
gap
deposition machine
out target
anode
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KR2019910023609U
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Korean (ko)
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KR930016163U (en
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홍영준
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문정환
엘지반도체주식회사
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Publication of KR930016163U publication Critical patent/KR930016163U/en
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Publication of KR0125868Y1 publication Critical patent/KR0125868Y1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 고안은 반도체 소자 제조공정의 하나인 스퍼터링 공정에 사용되는 금속증착기(CONMAG II GUN)의 분리형 아웃 타켓구조에 관한 것으로 고진공의 챔버(Chamber)내부에 원추형타켓(음극)이 장착되고, 그 중심부에는 아노드(양극)가 설치되며, 상기 타켓의 후방부에는 일렉트로 마그네트가 설치되는 한편, 전방에는 웨이퍼가 장착되는 히터블럭이 설치된 통상적인 금속증착기에 있어서, 상기 원추형 타켓의 아웃타켓 중심부에 일정간극의 갭(gap)을 형성하여 아웃타켓을 분리형성함으로서 2단계의 스퍼터링 공정을 가능하게 한 것이다.The present invention relates to a separate out target structure of a metal deposition machine (CONMAG II GUN) used in the sputtering process, which is one of the semiconductor device manufacturing processes, and a conical target (cathode) is mounted inside a high vacuum chamber, and at the center thereof. An anode (anode) is installed, and in the rear part of the target, an electromagnet is installed, while in the conventional metal vapor deposition machine equipped with a heater block in which a wafer is mounted in the front, there is a certain gap in the center of the out target of the conical target. Forming a gap (gap) to separate the out target to enable a two-step sputtering process.

이와같이 된 본 고안에 의하면 저반사율 및 고스텝 커버리지 Al막을 동시에 얻을 수 있으므로 일드향상 및 반도체 소자의 신뢰성을 높일 수 있는 효과가 있다.According to the present invention as described above, since a low reflectance and a high step coverage Al film can be simultaneously obtained, yield improvement and reliability of a semiconductor device can be improved.

Description

금속 증착기(CONMAG II GUN)의 분리형 아웃 타켓구조Separate out target structure of metal vapor deposition machine (CONMAG II GUN)

제1도는 통상적인 금속 증착기(CONMAG II GUN)의 개략적인 구조 및 작용원리를 보인 구성도.1 is a schematic view showing the schematic structure and principle of operation of a conventional metal vapor deposition machine (CONMAG II GUN).

제2도는 본 고안에 의한 분리형 아웃 타켓구조가 적용된 금속증착기의 개략적인 구조도.2 is a schematic structural diagram of a metal evaporator to which a separate out target structure according to the present invention is applied.

제3도는 본 고안이 적용된 분리형 아웃 타켓의 구조를 보인 정면도.Figure 3 is a front view showing the structure of the detachable out target to which the present invention is applied.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 챔버[Chanber) 2 : 원주형 타켓(Target)1: Chamber 2: Cylinder Target

2a : 인너 타켓 2b : 아웃 타켓2a: inner target 2b: out target

3 : 아노드(Anode:양극) 4 : 일렉트로 마그네트(Electro Magnet)3: Anode 4: Electro Magnet

5 : 웨이퍼(Wafer) 6 : 히터 블럭(Heater block)5: Wafer 6: Heater block

20 : 갭(gap)20: gap

본 고안은 반도체 소자 제조공정중의 하나인 금속증착 공정(Metal Sputtering Process)에 사용되는 금속증착기(CONMAG II GUN:이하 금속증착기로 총칭함)의 아웃 타켓구조에 관한 것으로 특히 고진공의 챔버(Chamber)내에 장착되는 원추형의 타켓(Target:또는 캐소우드(음극)이라고도 함)을 분리형성하고 2단계로 금속(Al)막을 증착하여 스텝 커버리지(Step Coverage) 개선 및 저반사율 알루미늄막을 얻을 수 있도록 아웃 타켓을 분리형성한 증착기의 분리형 아웃 타켓구조에 관한 것이다.The present invention relates to an out target structure of a metal deposition machine (CONMAG II GUN: hereinafter referred to collectively as a metal deposition machine) used in the metal deposition process (metal deposition process), which is one of the semiconductor device manufacturing processes. The out target can be separated to form a conical target (also called a target (or cathode)) and to deposit a metal (Al) layer in two steps to improve step coverage and obtain a low reflectivity aluminum film. The present invention relates to a separate out target structure of a separation formed vapor deposition machine.

통상 반도체 소자를 제조함에 있어서는 소자의 게이트(gate)형성이나 각 셀의 전기적인 연결 및 외부와의 도선연결을 위하여 웨이퍼(Wafer) 표면에 금속(예컨데, Al, W, Mo, Ti등)막을 형성하는 금속증착 공정을 수행하는 바, 이때 사용되는 장비가 금속증착기이다.In manufacturing a semiconductor device, a metal (for example, Al, W, Mo, Ti, etc.) film is formed on the surface of a wafer in order to form a gate of the device, to electrically connect each cell, and to conduct a wire connection to the outside. To perform a metal deposition process, the equipment used at this time is a metal deposition machine.

제1도는 통상적인 금속증착기의 개략적인 구성 및 작용원리를 보이는 구성도로서 이에 도시한 바와같이 통상적인 금속증착기는 고진공(5×10-nTorr이하)의 챔버(1) 내부에 원추형 타켓(2)이 설치되고, 그 중심부에는 아노드(anode:양극)(3)가 설치되며, 상기 타켓(2)의 후방부에는 일렉트로 마그네트(electro magnet)(4)이 설치되는 한편, 상기 타켓(2)의 전방에는 웨이퍼(5)가 장착되는 히터브럭(Heater Block)(6)이 설치된 구성으로 되어 있다.FIG. 1 is a schematic view showing a schematic construction and operation principle of a conventional metal vapor deposition machine. As shown in the drawing, a conventional metal vapor deposition machine has a conical target (2) inside a chamber (1) of high vacuum (5 × 10 −n Torr or less). ), An anode (anode) 3 is installed at the center thereof, and an electro magnet 4 is installed at the rear of the target 2, while the target 2 is installed. The heater block 6 in which the wafer 5 is mounted is provided in front.

상기 히터블럭(6)은 그 중심부에 아르곤가스 주입공(7)이 형성되어 있고, 내부에는 절연물질(Insulation)(8)이 충진되어 있으며, 그 일측에는 써머커플(Thermo couple)(9)이 설치되어 웨이퍼(5)에 소정의 온도를 가하도록 구성되어 있다.The heater block 6 has an argon gas injection hole 7 formed at a central portion thereof, an insulation material 8 is filled therein, and a thermocouple 9 is formed at one side thereof. It is provided so that a predetermined temperature may be applied to the wafer 5.

또한, 상기 원추형 타켓(2)은 스텝 커버리지를 개선하기 위해서 인너타켓(2a)과 아웃타켓(2b)으로 분리 형성되어 있으며, 이 타켓(2)은 음극(Cathode)의 역할을 하게 되어 있고, 그 후방에 위치한 일렉트로 마그네트(4) 역시 인너 마그네트(4a)와 아웃 마그네트(4b)로 분리 형성되어 있다.In addition, the conical target (2) is separated into an inner target (2a) and an out target (2b) in order to improve step coverage, this target (2) is to act as a cathode (Cathode), The electromagnet 4 located at the rear side is also formed by separating the inner magnet 4a and the out magnet 4b.

도면중 미설명 부호 10은 마운팅 플랜지, 11은 오-링, 12는 웨이퍼 클램프를 보인 것이다.In the figure, reference numeral 10 denotes a mounting flange, 11 an O-ring, and 12 a wafer clamp.

이와같이 구성되는 금속증착기의 스퍼터링(Sputtering) 작용을 살펴보면 다음과 같다.Looking at the sputtering action of the metal deposition machine configured as described above are as follows.

즉, 챔버(1)내의 타켓(2)과 웨이퍼(5) 사이에 아르곤가스를 주입하고, 양극(3:아노드)에 고전압을 걸어줌과 동시에 인너타켓(2a)과 아웃타켓(2b)으로 구성된 음극(2:타켓)에 디시 파워(DC power)를 인가하면, 챔버(1)내에 강한 전기장이 형성되어, 아르곤가스가 이온(ion) 분해되어(Ar+, e-, Ar-등) Ar+이온이 타켓(2)을 때려 Al입자가 웨이퍼(5) 표면에 디포지션(Deposition)되는 것이다.That is, argon gas is injected between the target 2 and the wafer 5 in the chamber 1, a high voltage is applied to the anode 3: anode, and at the same time, the inner target 2a and the out target 2b are used. consisting of negative electrode: When applying a DC power (DC power) to the (second target), is a strong electric field formed in the chamber 1, argon ions (ion) is decomposed (Ar +, e -, Ar -, etc.) Ar The ions strike the target 2 so that the Al particles are deposited on the surface of the wafer 5.

그러나, 상기한 바와같은 종래의 금속증착기는 스텝 커버리지 개선을 위하여 타켓을 인너타켓과 아웃타켓으로 분리형성하였으나, 반도체 소자의 금속 다중배선의 제1, 제2층 배선을 위한 Al막 증착시 한단계로 Al막을 스퍼터링 하므로 컨택트 홀(Contact hole) 및 TC홀에서의 스텝 커버리지 개선에 한계가 있고, 또한 Al막 표면의 고반사율에 의해 포토(Photo)공정시 노칭(notching) 현상을 유발시키는등의 결함이 있어 반도체 소자의 신뢰성을 저하시키는 문제점이 있었다.However, the conventional metal vapor deposition machine as described above is formed by separating the target into the inner target and the out target to improve the step coverage, but in one step when depositing the Al film for the first and second layer wiring of the metal multiple wiring of the semiconductor device Since the Al film is sputtered, there is a limit to the improvement of step coverage in the contact hole and the TC hole, and the defects such as the notching phenomenon during the photo process due to the high reflectivity of the Al film surface are caused. There is a problem of lowering the reliability of the semiconductor device.

따라서 본 고안은 상기한 바와같은 종래의 결함을 해소하기 위하여 안출한 것으로, 챔버 내에 장착된 원추형 타켓의 아웃타켓 중심부에 일정간극의 갭(gap)을 형성하여 아웃타켓을 분리형성하고 2단계로 Al막을 증착하여 Al스텝 커버리지 개선 및 저반사율 Al막을 얻을 수 있도록 한 금속증착기의 분리형 아웃 타켓 구조를 제공하는데 목적을 두고 있다.Therefore, the present invention is devised to solve the above-mentioned conventional defects, and forms a gap of a predetermined gap in the center of the out target of the conical target mounted in the chamber to separate the out target and form Al in two steps. The purpose of the present invention is to provide a separate out-target structure of a metal vapor deposition machine capable of depositing a film to improve Al step coverage and obtain a low reflectance Al film.

상기와 같은 본 고안의 목적을 달성하기 위하여 고진공의 챔버 내부에 원추형 타켓이 장착되고, 그 중심부에는 아노드가 설치되며, 상기 타켓의 후방부에는 일렉트로 마그네트가 설치되는 한편, 전방에는 웨이퍼가 장착되는 히터블럭이 설치된 통상의 금속증착기에 있어서, 상기 원추형 타켓의 아웃타켓 중심부에 일정간극의 갭을 형성하여, 그 분리된 아웃타켓에 각각 디시 파워를 인가할 수 있도록 한 것을 특징으로 하는 금속증착기의 분리형 아웃 타켓구조가 제공된다.In order to achieve the object of the present invention as described above, a cone-shaped target is mounted inside the chamber of high vacuum, and an anode is installed at the center thereof, and an electro-magnet is installed at the rear of the target, while a wafer is mounted at the front. In a conventional metal vapor deposition machine equipped with a heater block, a metal gap is formed by forming a gap of a predetermined gap in the center of the out target of the conical target, so that the dish power can be applied to each of the separated out targets. Out target structure is provided.

이러한 본 고안은 1단게에서는 인너 타켓에 디시 파워를 인가하는 상태에서 공정을 진행하여 전기장이 발생되어 분해된 이온이 인너 타켓을 때려서 인너 타켓에서 떨어져 나온 알루미늄 입자들이 웨이퍼의 콘택홀에 직진하여 저면에 증착되도록 하고, 2단게에서는 인너 타켓에 인가되는 디시 파워는 차단하고, 분리된 아웃 타켓에 각각 디시 파워를 인가하여 강하게 직진되는 알루미늄 입자들이 콘택홀의 측면에 증착되도록 하여 스텝 커버리지 및 저반사율의 Al막을 형성할 수 있으므로 일드(Yield) 향상 및 반도체 소자의 신뢰성을 높일 수 있는 특징이 있다.In the present invention, in the first step, the process is performed in the state of applying dish power to the inner target, and an electric field is generated, and the decomposed ions hit the inner target so that the aluminum particles falling from the inner target go straight to the contact hole of the wafer. In step 2, the dish power applied to the inner target is cut off, and the dish power is applied to each of the separated out targets so that the aluminum particles, which are strongly straight, are deposited on the side of the contact hole. Since it can be formed, there is a feature that can improve the yield and the reliability of the semiconductor device.

이하에서는 첨부한 도면에 의하여 보다 상세히 설명하겠다.Hereinafter will be described in more detail by the accompanying drawings.

제2도는 본 고안에 의한 분리형 아웃 타켓 구조가 적용된 금속증착기의 요부 구성도이고, 제3도는 분리형 아웃타켓의 구조를 보인 정면도로서 이에 도시한 바와같이 고진공의 챔버(1) 내부에 장착된 원추형 타켓(2)의 아웃타켓(2b) 중심부에 일정간극의 갭(20)을 형성하여 아웃타켓(2b)을 분리 형성하고, 그 분리된 아웃타켓(2b) 각각에 디시 파워(DC power)을 인가할 수 있도록 연결하여, 인너타켓(2a)과 아웃타켓(2b)을 2단계로 스퍼터링할 수 있도록함과 동시에 분리된 아웃타켓(2b)에 강하게 디시 파워를 인가할 수 있도록 구성한 것이다.2 is a main configuration diagram of a metal vapor deposition apparatus to which the detachable out target structure according to the present invention is applied, and FIG. 3 is a front view showing the structure of the detachable out target. As shown therein, a conical target mounted inside the chamber 1 of high vacuum is shown. A gap 20 having a predetermined gap is formed in the center of the out target 2b of (2) to separate the out target 2b, and DC power is applied to each of the separated out targets 2b. By connecting so that the inner target (2a) and the out target (2b) can be sputtered in two stages and at the same time configured to apply a strong power to the separate out target (2b).

도면에서 종래 구성과 동일한 부분에 대해서는 동일부호를 부여하였다.In the drawings, the same reference numerals are given to the same parts as in the prior art.

상기와 같은 본 고안에 의한 분리형 아웃타켓이 적용된 금속증착기의 스퍼터링 작용의 기본적인 원리는 공정가스를 주입하는 상태에서 전기장을 발생시켜서 분리된 이온으로 타켓을 대려서 타켓에서 떨어져 나온 입자를 증착시킨다는 점에서 종래와 유사하다.The basic principle of the sputtering action of the metal evaporator to which the detachable out target according to the present invention is applied is to generate an electric field in the process gas injection state to deposit particles separated from the target by touching the target with the separated ions. Similar to the prior art.

여기서, 본 고안은 2단계로 증착작업을 진행하게 되는데, 1단계에서는 인너타켓(2a)에 디시 파워를 인가하고, 아웃타켓(2b)의 디시 파워를 차단한 상태에서 공정을 진행하여 웨이퍼의 콘택홀 저면에 증착막을 형성하고, 2단계에서는 인너타켓(2a)의 디시 파워는 차단하고, 분리된 아웃타켓(2b)에 각각 디시 파워를 강하게 인가하여 아웃 타켓(2b)에서 떨어져 나온 입자들이 강한 운동에너지를 갖고 콘택홀의 측벽에 증착되어 종래 보다 스텝커버리지가 개선되게 된다.Here, the present invention proceeds to the deposition operation in two steps, in the first step is applied a dish power to the inner target (2a), the process proceeds in the state that cut off the dish power of the out target (2b) to contact the wafer The deposition film is formed on the bottom of the hole, and in step 2, the dish power of the inner target 2a is blocked, and the dish power is strongly applied to each of the separated out targets 2b so that the particles falling out of the out target 2b are strongly moved. The energy is deposited on the sidewalls of the contact holes, thereby improving step coverage.

이와같이 구성된 본 고안에 의한 분리형 아웃 타켓구조를 적용하면 2단계로 알루미늄막을 증착시킬 수 있으므로 스텝 커버리지 개선 및 저반사율 Al막을 동시에 얻을 수 있는 것이다.Applying a separate out-target structure according to the present invention configured as described above can deposit an aluminum film in two steps, thereby improving step coverage and obtaining a low reflectance Al film at the same time.

즉, 1단계에서는 적정조건으로 Al스텝 커버리지의 개선효과를 얻을 수 있고 2단계에서는 저반사율의 Al막을 얻을 수 있으므로 포토공정시의 노칭현상을 크게 줄일 수 있어 일드(Yield) 향상 및 반도체 소자의 신뢰성을 높일 수 있는 효과가 있다.That is, in the first step, the improvement of Al step coverage can be obtained under the appropriate conditions, and in the second step, an Al film having a low reflectance can be obtained, which greatly reduces the notching phenomenon during the photo process, thereby improving yield and reliability of the semiconductor device. There is an effect to increase.

Claims (1)

고진공의 챔버(1) 내부에 원추형 타켓(2)이 장착되고, 그 중심부에는 아노드(3)가 설치되며, 상기 타켓(2)의 후방부에는 일렉트로 마그네트(4)가 설치되는 한편, 전방에는 웨이퍼(5)가 장착되는 히터블럭(6)이 설치된 통상의 금속증착기에 있어서, 상기 원추형 타켓(2)의 아웃타켓(2b) 중심부에 일정간극의 갭(20)을 형성하여, 아웃타켓을 분리형성함으로써 2단계의 스퍼터링 공정을 가능하게 한 것임을 특징으로 하는 금속증착기의 분리형 아웃 타켓구조.A cone-shaped target 2 is mounted inside the chamber 1 of a high vacuum, an anode 3 is installed at the center thereof, and an electro-magnet 4 is installed at the rear portion of the target 2, while at the front thereof. In a conventional metal vapor deposition machine provided with a heater block 6 on which a wafer 5 is mounted, a gap 20 with a predetermined gap is formed in the center of the out target 2b of the conical target 2 to separate the out target. Forming a separate out-target structure of a metal vapor deposition machine, characterized in that by enabling the two-step sputtering process.
KR2019910023609U 1991-12-23 1991-12-23 Separable out-target structure of metal evaporator KR0125868Y1 (en)

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