JPH0445584B2 - - Google Patents
Info
- Publication number
- JPH0445584B2 JPH0445584B2 JP58039545A JP3954583A JPH0445584B2 JP H0445584 B2 JPH0445584 B2 JP H0445584B2 JP 58039545 A JP58039545 A JP 58039545A JP 3954583 A JP3954583 A JP 3954583A JP H0445584 B2 JPH0445584 B2 JP H0445584B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- valve
- connection
- gas supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H10P14/24—
-
- H10P14/3411—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039545A JPS59166238A (ja) | 1983-03-10 | 1983-03-10 | 薄膜形成装置 |
| US06/586,450 US4523544A (en) | 1983-03-10 | 1984-03-05 | Apparatus for glow discharge deposition of a thin film |
| DE8484301522T DE3479818D1 (en) | 1983-03-10 | 1984-03-07 | Method and apparatus for forming thin film |
| EP84301522A EP0119058B1 (en) | 1983-03-10 | 1984-03-07 | Method and apparatus for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039545A JPS59166238A (ja) | 1983-03-10 | 1983-03-10 | 薄膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59166238A JPS59166238A (ja) | 1984-09-19 |
| JPH0445584B2 true JPH0445584B2 (enExample) | 1992-07-27 |
Family
ID=12556020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58039545A Granted JPS59166238A (ja) | 1983-03-10 | 1983-03-10 | 薄膜形成装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4523544A (enExample) |
| EP (1) | EP0119058B1 (enExample) |
| JP (1) | JPS59166238A (enExample) |
| DE (1) | DE3479818D1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063376A (ja) * | 1983-09-14 | 1985-04-11 | Canon Inc | 気相法堆積膜製造装置 |
| JPH084072B2 (ja) * | 1986-01-14 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
| JPS6334167U (enExample) * | 1986-08-25 | 1988-03-04 | ||
| DE3800712A1 (de) * | 1988-01-13 | 1989-07-27 | Philips Patentverwaltung | Verfahren zur plasmaaktivierten reaktiven abscheidung von elektrisch leitendem mehrkomponentenmaterial aus einer gasphase |
| US5031571A (en) * | 1988-02-01 | 1991-07-16 | Mitsui Toatsu Chemicals, Inc. | Apparatus for forming a thin film on a substrate |
| TW293983B (enExample) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| JP2003257875A (ja) * | 2002-03-05 | 2003-09-12 | Fujitsu Ltd | 半導体装置の製造方法および成膜方法 |
| US20130272928A1 (en) * | 2012-04-12 | 2013-10-17 | Devi Shanker Misra | Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
| JPS5591968A (en) * | 1978-12-28 | 1980-07-11 | Canon Inc | Film forming method by glow discharge |
| JPS5764922A (en) * | 1980-10-07 | 1982-04-20 | Mitsubishi Electric Corp | Apparatus for forming amorphous thin film |
| US4389970A (en) * | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
| JPS57186321A (en) * | 1981-05-12 | 1982-11-16 | Fuji Electric Corp Res & Dev Ltd | Producing method for amorphous silicon film |
| US4438188A (en) * | 1981-06-15 | 1984-03-20 | Fuji Electric Company, Ltd. | Method for producing photosensitive film for electrophotography |
| JPS58128728A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Mach Co Ltd | 半導体気相成長装置 |
-
1983
- 1983-03-10 JP JP58039545A patent/JPS59166238A/ja active Granted
-
1984
- 1984-03-05 US US06/586,450 patent/US4523544A/en not_active Expired - Lifetime
- 1984-03-07 EP EP84301522A patent/EP0119058B1/en not_active Expired
- 1984-03-07 DE DE8484301522T patent/DE3479818D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0119058B1 (en) | 1989-09-20 |
| DE3479818D1 (en) | 1989-10-26 |
| US4523544A (en) | 1985-06-18 |
| EP0119058A2 (en) | 1984-09-19 |
| EP0119058A3 (en) | 1986-08-27 |
| JPS59166238A (ja) | 1984-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20110109928A (ko) | 성막 장치, 성막 방법 및 기억 매체 | |
| JPH0445584B2 (enExample) | ||
| JPS6123760A (ja) | 電子写真感光体の製造方法 | |
| WO2019153585A1 (zh) | 一种真空反应装置及反应方法 | |
| WO2014003298A1 (ko) | 프로세스 챔버 및 기판 처리 방법 | |
| JPH08227880A (ja) | プラズマcvd装置 | |
| CN108866506A (zh) | 一种封闭式镀膜系统 | |
| JPS642193B2 (enExample) | ||
| JP3957126B2 (ja) | 成膜装置 | |
| JPH0427293B2 (enExample) | ||
| CN117248192A (zh) | 包括改进的排气结构的衬底处理设备 | |
| JP2001035798A (ja) | 成膜装置 | |
| CN102044425B (zh) | 多晶硅栅的沉积方法 | |
| JPS6043488A (ja) | 薄膜製造装置 | |
| US20060062916A1 (en) | Atomic layer deposition apparatus and method | |
| JPS61198716A (ja) | 薄膜製造装置 | |
| JPS6345374A (ja) | 機能性堆積膜形成装置 | |
| JPS62170478A (ja) | アモルフアスシリコン膜の製造方法 | |
| JPS6010619A (ja) | グロ−放電による膜形成方法 | |
| JP2001168043A (ja) | 半導体層の積層方法及び該積層装置 | |
| KR20190074156A (ko) | 박막 증착 방법 | |
| JPS6115974A (ja) | プラズマcvd装置 | |
| JPS58216475A (ja) | シリコン太陽電池の製造方法 | |
| JPH0549751B2 (enExample) | ||
| CN117702085A (zh) | 气体供应装置及基板处理装置 |