CN117248192A - 包括改进的排气结构的衬底处理设备 - Google Patents

包括改进的排气结构的衬底处理设备 Download PDF

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CN117248192A
CN117248192A CN202310718032.4A CN202310718032A CN117248192A CN 117248192 A CN117248192 A CN 117248192A CN 202310718032 A CN202310718032 A CN 202310718032A CN 117248192 A CN117248192 A CN 117248192A
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processing apparatus
substrate processing
control ring
susceptor
flow control
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W·C·廖
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ASM IP Holding BV
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ASM IP Holding BV
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Abstract

公开了一种衬底处理设备单元。示例性衬底处理设备包括：反应室，其设置有反应空间；基座，其设置在反应室中并配置成支撑衬底，其中基座配置成可在处理位置和转移位置之间竖直移动；喷淋板，其设置在基座上方并配置为向反应空间提供气体；排气单元，其配置为从反应室排出气体，该排气单元包括：排气导管，其围绕喷淋板并设置有主导管；第一流动控制环，当基座处于处理位置时，该第一流动控制环以一间隔围绕基座；以及第二流动控制环，其围绕第一流动控制环；其中第一排气通道形成在排气导管和第一流动控制环之间；其中第二排气通道形成在第一流动控制环和第二控制环之间，并且第二排气通道流体连接到主导管和基座下方的区域。

Description

包括改进的排气结构的衬底处理设备
技术领域
本发明总体涉及包括改进的排气结构的衬底处理设备。
背景技术
图1a是示出沉积步骤的现有衬底处理设备的示意性截面图。在衬底处理设备中，反应气体通过喷淋板12被引入到反应室10的反应空间11中。反应气体通过排气导管77排出到外部。然而，在沉积步骤期间，一些反应气体被引入基座16下方的区域。
图1b是示出处理步骤的现有衬底处理设备的示意性截面图。在处理步骤期间，反应气体可以扩散回反应空间11，导致衬底15上的边缘膜厚度增加。
本节中阐述的任何讨论，包括对问题和解决方案的讨论，已经包括在本公开中，仅仅是为了提供本公开的背景，并且不应被认为是承认任何或所有的讨论在本发明被做出时是已知的，或者构成现有技术。
发明内容
提供本发明内容是为了以简化的形式介绍一些概念。这些概念在以下公开的示例实施例的详细描述中被进一步详细描述。本发明内容不旨在标识所要求保护的主题的关键特征或必要特征，也不旨在用于限制所要求保护的主题的范围。
根据本公开的示例性实施例，提供了一种衬底处理设备。该衬底处理设备包括：反应室，其设置有反应空间；基座，其设置在反应室中并配置成支撑衬底，其中基座配置成可在处理位置和转移位置之间竖直移动；喷淋板，其设置在基座上方并配置为向反应空间提供气体；排气单元，其配置为从反应室排出气体，该排气单元包括：排气导管，其围绕喷淋板并设置有主导管；第一流动控制环，当基座处于处理位置时，该第一流动控制环以一间隔围绕基座；以及第二流动控制环，其围绕第一流动控制环；其中第一排气通道形成在排气导管和第一流动控制环之间；其中第二排气通道形成在第一流动控制环和第二控制环之间，并且第二排气通道流体连接到主导管和基座下方的区域。
在各种实施例中，第一气体流动控制环可以进一步包括多个突起，这些突起配置成与第二流动控制环的内圆周接合。
在各种实施例中，间隔可以是0.5至2.5mm。
在各种实施例中，第一排气通道的尺寸可以是0.5至2.5mm。
在各种实施例中，第二排气通道的尺寸可以是0.5至2.5mm。
在各种实施例中，气体可以包括前体气体、反应物气体和第一惰性气体。
在各种实施例中，前体气体可以包括以下中的至少一种：双(二乙基氨基)硅烷(BDEAS)、四(二甲基氨基)硅烷(4DMAS)、三(二甲基氨基)硅烷(3DMAS)、双(二甲基氨基)硅烷(2DMAS)、四(乙基甲基氨基)硅烷(4EMAS)、三(乙基甲基氨基)硅烷(3EMAS)、双(叔丁基氨基)硅烷(BTBAS)和双(乙基甲基氨基)硅烷(BEMAS)、二异丙基氨基硅烷(DIPAS)及其组合。
在各种实施例中，反应物气体可以包括以下中的至少一种：O2、N2O、CO2或其组合。
在各种实施例中，第一惰性气体可以包括以下中的至少一种：He、Ar、N2或其组合。
在各种实施例中，第二惰性气体可以配置为通过空间和第二排气通道从基座下方的区域提供到基座和主导管上方。
在各种实施例中，衬底处理设备可以包括等离子体增强原子层沉积设备。
附图说明
当结合以下说明性附图考虑时，通过参考详细描述和权利要求，可以获得对本公开的示例性实施例的更完整理解。
图1a是示出沉积步骤的现有衬底处理设备的示意性截面图。
图1b是示出处理步骤的现有衬底处理设备的示意性截面图。
图2是本发明实施例中的衬底处理设备的示意图。
图3是本发明实施例中的方法的时序。
图4是本发明实施例中的衬底处理设备的示意性截面图。
图5是本发明实施例中的第一流动控制环的示意性透视图。
应当理解，附图中的元件是为了简单和清楚而示出的，并不一定是按比例绘制的。例如，图中一些元件的尺寸可能相对于其他元件被夸大，以帮助理解本公开的所示实施例。
具体实施方式
尽管下面公开了某些实施例和示例，但本领域技术人员将理解，本公开延伸到具体公开的实施例和/或本公开的用途及其明显的修改和等同物之外。因此，意图是本公开的范围不应被这里描述的特定实施例所限制。
本文呈现的图示并不意味着是任何特定材料、装置、结构或设备的实际视图，而仅仅是用于描述本公开的实施例的表示。
在本公开中，“气体”可以包括在常温常压下为气体的材料、蒸发的固体和/或蒸发的液体，并且可以由单一气体或气体混合物构成，这取决于上下文。除了处理气体之外的气体，即不经过气体供应单元(例如喷淋板等)而引入的气体，可以用于例如密封反应空间，并且可以包括密封气体，例如稀有气体或其他惰性气体。术语惰性气体指的是在可感知的程度上不参与化学反应的气体和/或当施加等离子体功率时能够激发前体的气体。
如本文所用，术语“衬底”可以指可以使用的或者可在其上形成器件、电路或膜的任何一种或多种底层材料。
如本文所用，术语“膜”和“薄膜”可以指通过本文公开的方法沉积的任何连续或不连续的结构和材料。例如，“膜”和“薄膜”可以包括2D材料、纳米棒、纳米管或纳米颗粒，或者甚至部分或全部分子层或者部分或全部原子层或者原子和/或分子的簇。“膜”和“薄膜”可包括具有针孔的材料或层，但仍至少部分连续。
图2是本发明实施例中的衬底处理设备的示意平面图。衬底处理设备可以包括：(i)四个处理模块20、22、24、26，每个具有四个反应室RC1、RC2、RC3、RC3；(ii)衬底处理室30，包括两个后端机器人32(衬底处理机器人)；以及(iii)用于同时装载或卸载两个衬底的装载锁定室40，装载锁定室40附接到衬底处理室30的另一侧，其中每个后端机器人32可接近装载锁定室40。每个后端机器人32具有至少两个可同时接近每个单元的两个反应室的末端执行器，所述衬底处理室30具有多边形形状，其具有分别对应于并附接到四个处理模块20、22、24、26的四个边，以及用于装载锁定室40的一个附加边，所有边都设置在同一平面上。每个处理模块20、22、24、26的内部和装载锁定室40的内部可以通过闸阀与衬底处理室30的内部隔离。
例如，在一些实施例中，控制器(未示出)可以存储被编程为执行衬底转移序列的软件。控制器还可以：检查每个处理室的状态；使用感测系统在每个处理室中定位衬底，控制每个模块的气体箱和电气箱；基于存储在FOUP52和装载锁定室40中的衬底的分布状态，控制设备前端模块中的前端机器人56；控制后端机器人32；以及控制闸阀和其他阀。
本领域技术人员可以理解，该设备包括一个或多个控制器，该控制器被编程或以其他方式配置为进行本文其他地方描述的沉积和反应器清洁过程。如本领域技术人员将理解，控制器可以与各种电源、加热系统、泵、机器人、气流控制器或阀通信。
在一些实施例中，设备可以具有多于一个的任何数量的反应室和处理模块(例如2、3、4、5、6或7个)。在图2中，设备具有16个反应室，但是它可以具有8个或更多个。通常，反应室可以包括用于在晶片上沉积薄膜或层的等离子体反应器。在一些实施例中，所有模块可以具有相同的处理晶片的能力，使得卸载/装载可以顺序且规则地定时，从而提高生产率或产量。在一些实施例中，模块可以具有不同的能力(例如不同的处理)，但是它们的处理时间可以基本相同。
图3是本发明实施例中的方法的时序。如图所示，可以通过一个或多个前体气体脉冲110、一个或多个反应物气体脉冲140和/或一个或多个等离子体功率脉冲120、130向反应室连续提供惰性气体。在沉积步骤和处理步骤期间，反应物气体和/或惰性气体可以暴露于(例如直接)等离子体，以形成用于例如PEALD(等离子体增强原子层沉积)过程的受激物质。沉积循环和处理循环可以重复。在处理步骤期间形成等离子体的功率可以高于在沉积步骤期间的功率。
前体气体可以包括以下中的至少一种：双(二乙基氨基)硅烷(BDEAS)、四(二甲基氨基)硅烷(4DMAS)、三(二甲基氨基)硅烷(3DMAS)、双(二甲基氨基)硅烷(2DMAS)、四(乙基甲基氨基)硅烷(4EMAS)、三(乙基甲基氨基)硅烷(3EMAS)、双(叔丁基氨基)硅烷(BTBAS)和双(乙基甲基氨基)硅烷(BEMAS)、二异丙基氨基硅烷(DIPAS)或其组合。
反应物气体可以包括以下中的至少一种：O2、N2O、CO2或其组合。
第一惰性气体可以包括以下中的至少一种：He、Ar、N2或其组合。第一惰性气体可用于点燃等离子体或有助于点燃反应室内的等离子体，从反应室中吹扫反应物和/或副产物，和/或用作载气以帮助将前体输送到反应室。
图4是本发明实施例中的衬底处理设备的示意性截面图。该衬底处理设备包括：反应室10，其设置有反应空间11；基座16，其设置在反应室10中并配置为支撑衬底15。基座16配置成可在处理位置和转移位置之间竖直移动。当基座16处于处理位置时，衬底处理设备可以在衬底15上执行处理。当基座16处于转移位置时，衬底处理设备可以将衬底15转移进出反应室10。
衬底处理设备还包括喷淋板12，其设置在基座16上方并配置为向反应空间11提供前体气体、反应物气体和第一惰性气体。喷淋板12可以具有气孔。喷淋板12可以是用于PEALD设备的电极。
衬底处理设备还包括排气单元70，其配置为从反应室中排出气体。排气单元70包括围绕喷淋板12并设置有主导管78的排气导管77；第一流动控制环71，当基座16处于处理位置时，其以间隔79围绕基座16；以及第二流动控制环73，其围绕第一流动控制环71。第一排气通道74形成在排气导管77和第一流动控制环71之间。气体通过第一排气通道74和主导管78排出到外部。在沉积步骤期间，一些气体可被引入基座16下方的区域。
第二排气通道75形成在第一流动控制环71和第二控制环73之间，并且第二排气通道75流体连接到主导管78和基座16下方的区域。在处理步骤期间，基座16下方的气体可以通过第二排气通道75排放到主导管78。
第一气体流动控制环71可以进一步包括多个突起72，其配置为与第二气体流动控制环73的内圆周接合，从而具有第二排气通道75。
第一流动控制环71和基座16之间的间隔79可以是0.5到2.5mm。第一排气通道74的尺寸可以是0.5到2.5mm。第二排气通道75的尺寸可以是0.5到2.5mm。
第二惰性气体可以配置为通过间隔79和第二排气通道75从基座16下方的区域提供到基座16和主导管78上方。第二惰性气体可以是密封气体，且可以包括以下中的至少一种：He、Ar、N2或其组合。
上述公开的示例实施例不限制本发明的范围，因为这些实施例仅仅是本发明实施例的示例。任何等同的实施例都在本发明的范围内。实际上，除了在此示出和描述的那些之外，本公开的各种修改，例如所描述的元件的可替代的有用组合，对于本领域技术人员来说从描述中会变得显而易见。这种修改和实施例也旨在落入所附权利要求的范围内。

Claims (11)

1.一种衬底处理设备，包括：
反应室，其设置有反应空间；
基座，其设置在反应室中并配置成支撑衬底，其中基座配置成可在处理位置和转移位置之间竖直移动；
喷淋板，其设置在基座上方并配置为向反应空间提供气体；
排气单元，其配置为从反应室排出气体，该排气单元包括：
排气导管，其围绕喷淋板并设置有主导管；
第一流动控制环，当基座处于处理位置时，该第一流动控制环以一间隔围绕基座；以及
第二流动控制环，其围绕第一流动控制环；
其中，第一排气通道形成在排气导管和第一流动控制环之间；
其中，第二排气通道形成在第一流动控制环和第二控制环之间，并且第二排气通道流体连接到主导管和基座下方的区域。
2.根据权利要求1所述的衬底处理设备，其中，所述第一气体流动控制环还包括多个突起，所述突起配置为与所述第二流动控制环的内圆周接合。
3.根据权利要求1和2所述的衬底处理设备，其中，所述间隔为0.5至2.5mm。
4.根据权利要求1至3所述的衬底处理设备，其中，所述第一排气通道的尺寸为0.5至2.5mm。
5.根据权利要求1至4所述的衬底处理设备，其中，所述第二排气通道的尺寸为0.5至2.5mm。
6.根据权利要求1至5所述的衬底处理设备，其中，所述气体包括前体气体、反应物气体和第一惰性气体。
7.根据权利要求5所述的衬底处理设备，其中，所述前体气体包括以下中的至少一种：双(二乙基氨基)硅烷(BDEAS)、四(二甲基氨基)硅烷(4DMAS)、三(二甲基氨基)硅烷(3DMAS)、双(二甲基氨基)硅烷(2DMAS)、四(乙基甲基氨基)硅烷(4EMAS)、三(乙基甲基氨基)硅烷(3EMAS)、双(叔丁基氨基)硅烷(BTBAS)和双(乙基甲基氨基)硅烷(BEMAS)、二异丙基氨基硅烷(DIPAS)或其组合。
8.根据权利要求5所述的衬底处理设备，其中，所述反应物气体包括以下中的至少一种：O2、N2O、CO2或其组合。
9.根据权利要求5所述的衬底处理设备，其中，所述第一惰性气体包括以下中的至少一种：He、Ar、N2或其组合。
10.根据权利要求1所述的衬底处理设备，其中，第二惰性气体配置为通过所述间隔和第二排气通道从所述基座下方的区域提供到所述基座和主导管上方。
11.根据权利要求1至8所述的衬底处理设备，其中，所述衬底处理设备包括等离子体增强原子层沉积设备。
CN202310718032.4A 2022-06-17 2023-06-16 包括改进的排气结构的衬底处理设备 Pending CN117248192A (zh)

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