TW202403934A - 包括改良的排氣結構之基板處理設備 - Google Patents

包括改良的排氣結構之基板處理設備 Download PDF

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TW202403934A
TW202403934A TW112121512A TW112121512A TW202403934A TW 202403934 A TW202403934 A TW 202403934A TW 112121512 A TW112121512 A TW 112121512A TW 112121512 A TW112121512 A TW 112121512A TW 202403934 A TW202403934 A TW 202403934A
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Taiwan
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substrate processing
gas
flow control
silane
processing equipment
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TW112121512A
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廖偉辰
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Publication of TW202403934A publication Critical patent/TW202403934A/zh

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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

揭露一種基板處理設備。例示性基板處理設備包括：一反應腔室，其具備一反應空間；一基座，其設置於此反應腔室中且配置以支撐一基板，其中此基座配置以可在一處理位置與一轉移位置之間豎直移動；一噴淋板，其設置於此基座上方且配置以向此反應空間提供一氣體；一氣體排放單元，其配置以自此反應腔室排放此氣體，其包含：一排氣道，其環繞此噴淋板且具備一主管道；一第一流量控制環，其當此基座處於此處理位置時以一空間環繞此基座；及一第二流量控制環，其環繞此第一流量控制環；其中一第一排氣通道形成於此排氣道與此第一流量控制環之間；其中一第二排氣通道形成於此第一流量控制環與此第二控制環之間，且此第二排氣通道流體連接至此主管道及此基座下方之一區域。

Description

包括改良的排氣結構之基板處理設備
本揭露大體上係關於包括改良的排氣結構之基板處理設備。
圖1A為展示沈積步驟之先前基板處理設備的示意性剖視圖。在此基板處理設備中，將反應氣體經由噴淋板12引入至反應腔室10之反應空間11中。反應氣體經由排氣道77排放至外部。然而，在沈積步驟期間將一些反應氣體引入基座16下方的區域中。
圖1B為展示處理步驟之先前基板處理設備的示意性剖視圖。反應氣體可在處理步驟期間擴散回至反應空間11，從而導致增大基板15上的邊緣膜厚度。
本節提出之任何討論（包括問題及解決方案之討論）僅為了提供本揭露脈絡之目的而包括在本揭露中，且不應視為承認討論之任何或全部在做成本揭露時已知或以其他方式構成先前技術。
提供本揭露內容來以簡化形式介紹一系列概念。此等概念將在以下揭露內容之實例實施例的詳細描述中進一步詳細描述。本揭露內容不意欲鑑別所主張申請標的之關鍵特徵或基本特徵，亦不意欲用以限制所主張申請標的之範疇。
根據本揭露之例示性實施例，提供一種基板處理設備。此基板處理設備包含：一反應腔室，其具備一反應空間；一基座，其設置於此反應腔室中且配置以支撐一基板，其中此基座配置以可在一處理位置與一轉移位置之間豎直移動；一噴淋板，其設置於此基座上方且配置以向此反應空間提供一氣體；一氣體排放單元，其配置以自此反應腔室排放此氣體，其包含：一排氣道，其環繞此噴淋板且具備一主管道；一第一流量控制環，其當此基座處於此處理位置時以一空間環繞此基座；及一第二流量控制環，其環繞此第一流量控制環；其中一第一排氣通道形成於此排氣道與此第一流量控制環之間；其中一第二排氣通道形成於此第一流量控制環與此第二控制環之間，且此第二排氣通道流體連接至此主管道及此基座下方之一區域。
在各種實施例中，此第一氣體流量控制環可進一步包含複數個突起，其配置以與此第二流量控制環之一內部圓周接合。
在各種實施例中，此空間可為0.5 mm至2.5 mm。
在各種實施例中，此第一排氣通道之大小可為0.5 mm至2.5 mm。
在各種實施例中，此第二排氣通道之大小可為0.5 mm至2.5 mm。
在各種實施例中，此氣體可包含一前驅物氣體、一反應物氣體，及一第一惰性氣體。
在各種實施例中，此前驅物氣體可包含以下各者中之至少一者：雙（二乙胺基）矽烷（bis(diethylamino)silane，BDEAS）、肆（二甲胺基）矽烷（tetrakis(dimethylamino)silane，4DMAS）、參（二甲胺基）矽烷（tris(dimethylamino)silane，3DMAS）、雙（二甲胺基）矽烷（bis(dimethylamino）silane，2DMAS）、肆（乙基甲胺基）矽烷（tetrakis(ethylmethylamino)silane，4EMAS）、三（乙基甲胺基）矽烷（tris(ethylmethylamino)silane，3EMAS）、雙（第三-丁胺基）矽烷（bis(tertiary-butylamino)silane，BTBAS），及雙（乙基甲胺基）矽烷（bis(ethylmethylamino）silane，BEMAS）、二異丙胺基矽烷（Diisopropylamino silane，DIPAS），及其組合。
在各種實施例中，此反應物氣體可包含以下各者中之至少一者：O2、N2O、CO2，及其組合。
在各種實施例中，此第一惰性氣體可包含以下各者中之至少一者：He、Ar、N2，及其組合。
在各種實施例中，一第二惰性氣體可配置以經由此空間及此第二排氣通道自此基座下方之一區域提供至此基座上方及此主管道。
在各種實施例中，此基板處理設備可包含電漿增強原子層沈積設備。
雖然在下文揭露某些實施例及實例，所屬技術領域中具有通常知識者將理解本揭露延伸超出本揭露之具體揭露的實施例及/或用途，及其等之顯而易知的修改與均等物。因此，意欲使本揭露的範疇不應受本文中所描述之特定實施例的限制。
本文中呈現之繪示並非意指任何特定材料、設備、結構或裝置之實際視圖，而僅係用以描述本揭露之實施例的表示。
在本揭露中，「氣體（gas）」可包括在常溫及常壓下為氣體之材料、汽化固體及/或汽化液體，並可取決於上下文由一單一氣體或一氣體混合物構成。除了處理氣體以外的氣體（亦即，未穿行通過氣體供應單元（諸如噴淋板）或類似者而引入的氣體）可用於例如密封反應空間，且可包括一密封氣體，諸如稀有氣體或其他惰性氣體。用語惰性氣體（inert gas）指不在可察覺程度上參加化學反應的氣體，及/或當施加電漿功率時可激發前驅物的氣體。
如本文中所使用，用語「基板（substrate）」可指可使用或於其上可形成裝置、電路、或膜的任何一或多個下伏材料。
如本文中所使用，用語「膜（film）」及「薄膜（thin film）」可指藉由本文中所揭露之方法沈積之任何連續或非連續的結構及材料。例如，「膜」及「薄膜」可包括二維（2D）材料、奈米棒、奈米管、或奈米粒子、或甚至部分或全部分子層、或部分或全部原子層、或原子及/或分子團簇。「膜」及「薄膜」可包含具有針孔的材料或層，但仍係至少部分連續。
圖2為本揭露之實施例中的基板處理設備之示意性平面圖。此基板處理設備可包含：（i）四個製程模組20、22、24、26，各具有四個反應腔室RC1、RC2、RC3、RC4；（ii）基板處置腔室30，其包括兩個後端機器人32（基板處置機器人）；及（iii）裝載鎖定腔室40，其用於同時裝載或卸載兩個基板，裝載鎖定腔室40附接至基板處置腔室30的一個額外側，其中每一後端機器人32可進出裝載鎖定腔室40。後端機器人32中之每一者具有至少兩個端效器，其等可同時進出每一單元之兩個反應腔室，此基板處置腔室30具有多邊形形狀，其具有分別對應於且附接至四個製程模組20、22、24、26的四個側及用於裝載鎖定腔室40的一個額外側，所有側均設置在相同平面上。每一製程模組20、22、24、26之內部及裝載鎖定腔室40之內部可藉由閘閥與基板處置腔室30之內部隔離。
在一些實施例中，控制器（未示出）可儲存軟體，其經程式化以例如執行基板轉移序列。控制器亦可：檢查每一處理腔室的狀態；使用感測系統在每一處理腔室中定位基板、控制氣體箱及用於每一模組的電箱；基於前開式晶圓傳送盒（FOUP）52及裝載鎖定腔室40中所儲存之基板的分佈狀態控制裝備前端模組中之前端機器人56；控制後端機器人32；及控制閘閥及其他閥。
熟習此項技藝者可理解設備包括一或多個控制器，其經程式化或以其他方式配置以致使本文於別處所述之沈積及反應器清潔製程的施行。如熟習此項技藝者將理解，控制器可與各種電源、加熱系統、泵、機器人、氣體流控制器或閥通訊。
在一些實施例中，設備可具有大於一之任何數目的反應腔室及製程模組（例如，2、3、4、5、6或7）。在圖2中，設備具有十六個反應腔室，但其可具有8或更多個。典型地，反應腔室可包含用於在晶圓上沈積薄膜或層之電漿反應器。在一些實施例中，所有模組可具有一樣的用於處置晶圓的能力，使得卸載/裝載可循序且規律地定時，藉此增大生產率或生產量。在一些實施例中，模組可具有不同能力（例如，不同的處置），但其等之處置時間實質上可一樣。
圖3為本揭露之實施例中之方法的時序。如所繪示，惰性氣體可經由一或多個前驅物氣體脈衝110、一或多個反應物氣體脈衝140及/或一或多個電漿功率脈衝120、130連續地提供至反應腔室。在沈積步驟及處理步驟期間，可將反應物氣體及/或惰性氣體曝露於（例如，直接）電漿以形成用於例如PEALD（電漿增強原子層沈積）製程中之受激發物種。可重複沈積循環及處理循環。在處理步驟期間形成電漿之功率可高於在沈積步驟期間之功率。
前驅物氣體可包含以下各者中之至少一者：雙（二乙胺基）矽烷（BDEAS）、肆（二甲胺基）矽烷（4DMAS）、參（二甲胺基）矽烷（3DMAS）、雙（二甲胺基）矽烷（2DMAS）、肆（乙基甲胺基）矽烷（4EMAS）、三（乙基甲胺基）矽烷（3EMAS）、雙（第三-丁胺基）矽烷（BTBAS），及雙（乙基甲胺基）矽烷（BEMAS）、二異丙胺基矽烷（DIPAS），或其組合。
反應物氣體可包含以下各者中之至少一者：O2、N2O、CO2，或其組合。
第一惰性氣體可包含以下各者中之至少一者：He、Ar、N2，或其組合。第一惰性氣體可用以在反應腔室內點燃電漿或促成電漿點燃，用以自反應腔室吹掃反應物及/或副產物，及/或用作載體氣體以協助遞送前驅物至反應腔室。
圖4為本揭露之實施例中的基板處理設備之示意性剖視圖。此基板處理設備包括：反應腔室10，且具備反應空間11；基座16，其設置在反應腔室10中且配置以支撐基板15。基座16配置以可在處理位置與轉移位置之間豎直移動。當基座16處於處理位置時，基板處理設備可對基板15執行處理。當基座16處於轉移位置時，基板處理設備可轉移基板15進出反應腔室10。
此基板處理設備進一步包含設置於基座16上方且配置以向反應空間11提供前驅物氣體、反應物氣體及第一惰性氣體的噴淋板12。噴淋板12可具有氣孔。噴淋板12可為用於PEALD設備的電極。
此基板處理設備進一步包含氣體排放單元70，其配置以自反應腔室排放氣體。氣體排放單元70包含：排氣道77，其環繞噴淋板12且具備主管道78；第一流量控制環71，其當基座16處於處理位置時以空間79環繞基座16；以及第二流量控制環73，其環繞第一流量控制環71。第一排氣通道74形成於排氣道77與第一流量控制環71之間。氣體經由第一排氣通道74及主管道78排放至外部。一些氣體可在沈積步驟期間引入至基座16下方之區域中。
第二排氣通道75形成於第一流量控制環71與第二控制環73之間，且第二排氣通道75流體連接至主管道78及基座16下方的區域。在處理步驟期間，基座16下方的氣體可經由第二排氣通道75排放至主管道78。
第一氣體流量控制環71可進一步包含複數個突起72，其配置以與第二流量控制環73之內部圓周接合，藉此具有第二排氣通道75。
第一流量控制環71與基座16之間的空間79可為0.5 mm至2.5 mm。第一排氣通道74之大小可為0.5 mm至2.5 mm。第二排氣通道75之大小可為0.5 mm至2.5 mm。
第二惰性氣體可配置以經由空間75及第二排氣通道75自基座16下方之區域提供至基座16上方及主管道78。第二惰性氣體可為密封氣體，且可包含以下各者中之至少一者：He、Ar、N2，或其組合。
上文描述之本揭露的實例實施例並未限制本揭露的範疇，因為這些實施例僅係本揭露之實施例的實例。任何等同實施例皆意欲在本揭露之範疇內。事實上，除本文中所示出及所描述者以外，本領域中具通常知識者可由實施方式輕易明白本揭露之各種修改，諸如所描述元件之替代有用組合。此類修改及實施例亦意欲落入文後之申請專利範圍的範疇內。
10:反應腔室 11:反應空間 12:噴淋板 15:基板 16:基座 20:製程模組 22:製程模組 24:製程模組 26:製程模組 30:基板處置腔室 32:後端機器人 40:裝載鎖定腔室 52:前開式晶圓傳送盒 56:前端機器人 70:氣體排放單元 71:第一流量控制環 72:突起 73:第二流量控制環 74:第一排氣通道 75:第二排氣通道 77:排氣道 78:主管道 79:空間 110:前驅物氣體脈衝 120:電漿功率脈衝 130:電漿功率脈衝 140:反應物氣體脈衝 RC1:反應腔室 RC2:反應腔室 RC3:反應腔室 RC4:反應腔室
當結合下列說明圖式考慮時，可藉由參照實施方式及申請專利範圍而衍生對本揭露之例示性實施例的更完整瞭解。 圖1A為展示沈積步驟之先前基板處理設備的示意性剖視圖。 圖1B為展示處理步驟之先前基板處理設備的示意性剖視圖。 圖2為本揭露之實施例中的基板處理設備之示意圖。 圖3為本揭露之實施例中之方法的時序。 圖4為本揭露之實施例中的基板處理設備之示意性剖視圖。 圖5為本揭露之實施例中的第一流量控制環之示意性立體圖。
將理解，圖式中的元件係為了簡明及清楚起見而繪示且不必然按比例繪製。例如，圖式中一些元件的尺寸可相對於其他元件特別放大，以幫助對於所繪示之本揭露實施例的理解。
10:反應腔室
11:反應空間
12:噴淋板
15:基板
16:基座
70:氣體排放單元
71:第一流量控制環
73:第二流量控制環
74:第一排氣通道
75:第二排氣通道
77:排氣道
78:主管道
79:空間

Claims (11)

  1. 一種基板處理設備，包括： 一反應腔室，具備一反應空間； 一基座，設置於該反應腔室中且配置以支撐一基板，其中該基座配置以可在一處理位置與一轉移位置之間豎直移動； 一噴淋板，設置於該基座上方且配置以向該反應空間提供一氣體；以及 一氣體排放單元，配置以自該反應腔室排放該氣體，其包括： 一排氣道，環繞該噴淋板且具備一主管道； 一第一流量控制環，當該基座處於該處理位置時以一空間環繞該基座；以及 一第二流量控制環，環繞該第一流量控制環； 其中一第一排氣通道形成於該排氣道與該第一流量控制環之間； 其中一第二排氣通道形成於該第一流量控制環與該第二控制環之間，且該第二排氣通道流體連接至該主管道及該基座下方之一區域。
  2. 如請求項1之基板處理設備，該第一氣體流量控制環更包括複數個突起，配置以與該第二流量控制環之一內部圓周接合。
  3. 如請求項1及2之基板處理設備，其中該空間為0.5 mm至2.5 mm。
  4. 如請求項1至3之基板處理設備，其中該第一排氣通道之大小為0.5 mm至2.5 mm。
  5. 如請求項1至4之基板處理設備，其中該第二排氣通道之大小為0.5 mm至2.5 mm。
  6. 如請求項1至5之基板處理設備，其中該氣體包括一前驅物氣體、一反應物氣體，及一第一惰性氣體。
  7. 如請求項5之基板處理設備，其中該前驅物氣體包括以下各者中之至少一者：雙（二乙胺基）矽烷（BDEAS）、肆（二甲胺基）矽烷（4DMAS）、參（二甲胺基）矽烷（3DMAS）、雙（二甲胺基）矽烷（2DMAS）、肆（乙基甲胺基）矽烷（4EMAS）、三（乙基甲胺基）矽烷（3EMAS）、雙（第三-丁胺基）矽烷（BTBAS），及雙（乙基甲胺基）矽烷（BEMAS）、二異丙胺基矽烷（DIPAS）、或其組合。
  8. 如請求項5之基板處理設備，其中該反應物氣體包括以下各者中之至少一者：O2、N2O、CO2，或其組合。
  9. 如請求項5之基板處理設備，其中該第一惰性氣體包括以下各者中之至少一者：He、Ar、N2，或其組合。
  10. 如請求項1之基板處理設備，其中一第二惰性氣體配置以經由該空間及該第二排氣通道自該基座下方之一區域提供至該基座上方及該主管道。
  11. 如請求項1至8之基板處理設備，其中該基板處理設備包括電漿增強原子層沈積設備。
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US20230407477A1 (en) 2023-12-21
CN117248192A (zh) 2023-12-19

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