TW202335205A - 基材處理設備 - Google Patents
基材處理設備 Download PDFInfo
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- TW202335205A TW202335205A TW111150243A TW111150243A TW202335205A TW 202335205 A TW202335205 A TW 202335205A TW 111150243 A TW111150243 A TW 111150243A TW 111150243 A TW111150243 A TW 111150243A TW 202335205 A TW202335205 A TW 202335205A
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- remote plasma
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 35
- 239000007921 spray Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 77
- 239000010408 film Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012636 effector Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Abstract
所揭示者係一種基材處理設備。例示性基材處理設備包括複數個反應室;一共用遠端電漿單元;複數個第一清潔氣體管線,其等經組態以將共用遠端電漿單元流體耦接至反應室;及一清潔氣體源,其提供共用遠端電漿單元一清潔氣體;其中第一清潔氣體管線之各者具備一閥,並經連接至反應室之一側壁。
Description
本揭露大致上係關於一遠端電漿單元。更具體地,本揭露之例示性實施例係關於包括遠端電漿單元及包括遠端電漿單元之基材處理設備。
為了增加所處理之晶圓的生產量,多個晶圓係藉由執行批次程式同時載入反應室中並進行處理。然而,使用批次程式難以以高精度執行處理。另一方面,若將單一晶圓載入反應室中並進行處理,則可以高精度控制製程,但產量變差。若多個單晶圓處理型反應室共用共同的製程及清潔氣體供應系統及遠端電漿單元(remote plasma unit,RPU),則多個反應室的同時操作可增加生產量。例示性基材處理設備係揭示於美國專利第9,447,498號中,特此將其以引用方式併入。
然而,當多個反應室在沉積期間共用清潔氣體管線時,通過清潔管線的串擾可發生,從而導致反應室之間就膜均勻性、膜組成等而言的變異。
本節提出之任何討論(包括問題及解決方案之討論)僅為了提供本揭露脈絡之目的而包括在本揭露中,且不應視為承認討論之任何或全部在做成本發明時已知或以其他方式構成先前技術。
提供本發明內容來以簡化形式介紹一系列概念。此等概念將在以下揭示內容之實施例具體例的詳細描述中進一步詳述。本發明內容不意欲鑑別所主張申請標的之關鍵特徵或基本特徵,亦不意欲用以限制所主張申請標的之範疇。
根據本揭露之例示性實施例,提供一種基材處理設備。基材處理設備可包含複數個反應室;一共用遠端電漿單元;複數個第一清潔氣體管線,其等經組態以將共用遠端電漿單元流體耦接至反應室;及一清潔氣體源,其提供共用遠端電漿單元一清潔氣體;其中第一清潔氣體管線之各者具備一閥,並經連接至反應室之一側壁。
在各種實施例中,清潔氣體可包含Ar、O
2、NF
3、C
2F
6、或SF
6中之至少一者。
在各種實施例中,基材處理設備可進一步包含一基座,基座經定位在反應室內以經構成及配置以支撐一基材。
在各種實施例中,基材處理設備可進一步包含一噴淋板,噴淋板經構成及配置以面向基座。
在各種實施例中,噴淋板可具備複數個孔以供應清潔氣體。
在各種實施例中,基材處理設備可進一步包含複數個第二清潔管線,第二清潔管線之各者經設置在共用遠端電漿單元與噴淋板之間。
在各種實施例中,第二清潔氣體管線之各者可具備一製程氣體管線,以通過噴淋板供應一製程氣體至反應室。
在各種實施例中,各閥可經組態以在供應製程氣體至反應室之時閉合。
在各種實施例中,一種基材處理設備可包含複數個反應室;一共用遠端電漿單元;複數個第一清潔氣體管線,其等經組態以將共用遠端電漿單元流體耦接至反應室;及一清潔氣體源,其提供共用遠端電漿單元一清潔氣體;其中第一清潔氣體管線共用一閥,且第一清潔氣體管線之各者經連接至反應室之一側壁。
在各種實施例中,基材處理設備可進一步包含一基座,基座經定位在反應室內以經構成及配置以支撐一基材。
在各種實施例中,基材處理設備可進一步包含一噴淋板,噴淋板經構成及配置以面向基座。
在各種實施例中,基材處理設備可進一步包含複數個第二清潔管線,第二清潔管線之各者經設置在共用遠端電漿單元與噴淋板之間。
在各種實施例中,第二清潔氣體管線之各者可具備一製程氣體管線,以通過噴淋板供應一製程氣體至反應室。
在各種實施例中,閥可經組態以在供應製程氣體至反應室之時閉合。
雖然在下文揭示某些實施例及實例,所屬技術領域中具有通常知識者將理解本揭露延伸超出本揭露之具體揭示的實施例及/或用途,及其等之顯而易知的修改與等同物。因此,意欲使本揭露的範疇不應受本文中所描述之特定實施例的限制。
本文中呈現之繪示並非意指任何特定材料、設備、結構、或裝置之實際視圖,而僅係用以描述本揭露之實施例的表示。
在本揭露中,「氣體(gas)」可包括在常溫及常壓下為氣體之材料、汽化固體及/或汽化液體,並可取決於上下文由一單一氣體或一氣體混合物構成。未穿行通過氣體供應單元(諸如噴淋板,或類似者)而引入的氣體可用於例如密封反應空間,且可包括一密封氣體,諸如稀有氣體或其他惰性氣體。用語惰性氣體(inert gas)指不在可察覺程度上參加化學反應的氣體,及/或當施加電漿功率時可激發前驅物的氣體。
如本文中所使用,用語「基材(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何(多個)下伏材料,其典型地係半導體晶圓。
如本文中所使用,用語「膜(film)」及「薄膜(thin film)」可指藉由本文中所揭示之方法所沉積之任何連續或非連續的結構及材料。例如,「膜」及「薄膜」可包括2D材料、奈米棒、奈米管、或奈米粒子、或甚至部分或全部分子層、或部分或全部原子層、或原子及/或分子團簇。「膜」及「薄膜」可包含具有針孔的材料或層,但仍係至少部分連續。
圖1係本發明之一實施例中之具有雙室模組之基材處理設備的示意平面圖。基材處理設備可包含四個製程模組1a、1b、1c、1d(各具備兩個反應室12、22)、負載鎖定室5、及具備後端機器人3之基材處置室4。
在此實施例中,基材處理設備可包含:(i)四個製程模組1a至1d,各具有並排配置且其等之前方在一線上對準的兩個反應室12、22;(ii)基材處置室4,其包括兩個後端機器人3(基材處置機器人);及(iii)負載鎖定室5,其用於同時裝載或卸載兩個基材,負載鎖定室5經附接至基材處置室4的一個額外側,其中各後端機器人3可存取負載鎖定室5。後端機器人3之各者具有至少兩個端效器,其等可同時存取各單元之兩個反應室,基材處置室4具有多邊形形狀,其具有分別對應於且經附接至四個製程模組1a至1d的四個側及用於負載鎖定室5的一個額外側,所有側均設置在相同平面上。各反應室12、22的內部及負載鎖定室5的內部可藉由閘閥9與基材處置室4的內部隔離。
在一些實施例中,控制器(未示出)可儲存軟體,其經程式化以例如執行基材傳遞序列。控制器亦可:檢查各製程室的狀態;使用用於各模組之感測系統、控制機構、氣體箱、及電箱在各製程室中定位基材;基於FOUP 8及負載鎖定室5中所儲存之基材的分布狀態控制設備前端機器人模組6中之前端機器人7;控制後端機器人3;及控制閘閥9及其他閥。
熟習項技藝者可理解設備包括一或多個控制器,其(等)經程式化或以其他方式經組態以致使本文於別處所述之沉積及反應器清潔製程的施行。如熟習項技藝者將理解,(多個)控制器可與各種電源、加熱系統、泵、機器人、氣體流控制器、或閥通訊。
在一些實施例中,設備可具有大於一之任何數目的反應室及製程模組(例如,2、3、4、5、6、或7)。在圖1中,設備具有八個反應室,但其可具有十或更多個。在一些實施例中,模組之反應器可係用於處理或處置晶圓之任何合適反應器,包括CVD反應器(諸如電漿增強CVD反應器及熱CVD反應器)或ALD反應器(諸如電漿增強ALD反應器及熱ALD反應器)。一般而言,反應室可係用於在晶圓上沉積薄膜或層之電漿反應器。在一些實施例中,所有模組可係相同類型,具有一樣的用於處置晶圓的能力,使得卸載/裝載可循序且規律地定時,藉此增加生產率或生產量。在一些實施例中,模組可具有不同能力(例如,不同的處置),但其等之加工時間實質上可一樣。
圖2係本發明之一實施例中之雙室模組的示意截面圖。在反應室12中可提供噴淋板14及基座13,且在反應室22中可提供噴淋板24及基座23。基座13、23可支撐基材並藉由內建加熱器或外部加熱器加熱,從而控制基材的溫度。
噴淋板14、24可經構成及配置以面向基座13、23。噴淋板14、24可具備複數個孔,如此將製程氣體供應至經放置在基座13、23上的基材,從而致使薄膜至基材上的沉積。
遠端電漿單元40可設置在反應室12、22上方。清潔氣體可從清潔氣體源(未示出)供應至RPU 40,從而轉變成氣體自由基、氣體離子、或兩者(反應性氣體)。例如,清潔氣體可係Ar、O
2、NF
3、C
2F
6、或SF
6中之至少一者。
清潔氣體可通過噴淋頭14、24使用中心氣體管線42及第二清潔氣體管線17、27引入反應室12、22中。第二清潔氣體管線17、27可從分流點實質上對稱地配置在反應室12、22之間。中心氣體管線42的第一端可經連接至RPU 40。中心氣體管線42的另一端可分成三個氣體管線,其等係第二清潔氣體管線17、27及第三清潔氣體管線44。
第二清潔氣體管線17、27之各者可具備RPU閘閥19、29及製程氣體管線11、21。RPU閘閥19、29可在通過製程氣體管線11、21及噴淋頭14、24供應製程氣體至基材時閉合,從而防止清潔氣體混入製程氣體中。
亦可通過設置在反應室12、22之側壁的孔18、28使用中心氣體管線42、第三清潔氣體管線44、及第一清潔氣體管線15、25將清潔氣體引入反應室12、22的下部區域中。第一清潔氣體管線15、25可從分流點至反應室12、22實質上對稱地配置在反應室12、22之間。各第一清潔氣體管線15、25可具備閥16、26。
控制器(未示出)可經組態以在開啟位置與閉合位置之間控制閥16、26。閥16、26可在供應製程氣體至基材時閉合,從而防止反應室12、22之間的串擾。
圖3係本發明之另一實施例中之雙室模組的示意截面圖。取代圖2中的閥16、26,第一清潔氣體管線15、25可共用閥56以同時閉合兩管線15、25。閥56亦可在供應製程氣體至基材時閉合,從而防止反應室12、22之間的串擾。
上文所述之本揭露之實例實施例並未限制本發明的範疇,因為這些實施例僅為本發明之實施例之實例。任何等效實施例均意欲落在本發明之範疇內。實際上,除本文中所示及所描述者以外,所屬技術領域中具有通常知識者可由本說明書明白本揭露之各種修改,諸如所描述元件之替代有用組合。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
1a,1b,1c,1d:製程模組
3:後端機器人
4:基材處置室
5:負載鎖定室
6:設備前端機器人模組
7:前端機器人
8:FOUP
9:閘閥
11:製程氣體管線
12:反應室
13:基座
14:噴淋板
15:第一清潔氣體管線
16:閥
17:第二清潔氣體管線
18:孔
19:RPU閘閥
21:製程氣體管線
22:反應室
23:基座
24:噴淋板
25:第一清潔氣體管線
26:閥
27:第二清潔氣體管線
28:孔
29:RPU閘閥
40:遠端電漿單元
42:中心氣體管線
44:第三清潔氣體管線
56:閥
當連同下列闡釋性圖式考慮時,可藉由參考實施方式及申請專利範圍而對本揭露之例示性實施例有更完整理解。
圖1係可用在本發明之一實施例中之具有雙室模組之半導體處理設備的示意平面圖。
圖2係本發明之一實施例中之雙室模組的示意截面圖。
圖3係本發明之另一實施例中之雙室模組的示意截面圖。
將理解,圖式中的元件係為了簡明及清楚起見而繪示且不必然按比例繪製。例如,圖式中一些元件的尺寸可相對於其他元件特別放大,以幫助對於所繪示之本揭露實施例的理解。
1b:製程模組
11:製程氣體管線
12:反應室
13:基座
14:噴淋板
15:第一清潔氣體管線
16:閥
17:第二清潔氣體管線
18:孔
19:RPU閘閥
21:製程氣體管線
22:反應室
23:基座
24:噴淋板
25:第一清潔氣體管線
26:閥
27:第二清潔氣體管線
28:孔
29:RPU閘閥
40:遠端電漿單元
42:中心氣體管線
Claims (14)
- 一種基材處理設備,其包含: 複數個反應室; 一共用遠端電漿單元; 複數個第一清潔氣體管線,其等經組態以將該共用遠端電漿單元流體耦接至該等反應室;及 一清潔氣體源,其提供該共用遠端電漿單元一清潔氣體; 其中該等第一清潔氣體管線之各者具備一閥並經連接至該反應室之一側壁。
- 如請求項1之基材處理設備,其中該清潔氣體包含Ar、O 2、NF 3、C 2F 6、或SF 6中之至少一者。
- 如請求項1之基材處理設備,其進一步包含一基座,該基座經定位在該反應室內以經構成及配置以支撐一基材。
- 如請求項3之基材處理設備,其進一步包含一噴淋板,該噴淋板經構成及配置以面向該基座。
- 如請求項4之基材處理設備,其中該噴淋板具備複數個孔以供應該清潔氣體。
- 如請求項5之基材處理設備,其進一步包含複數個第二清潔管線,該等第二清潔管線之各者經設置在該共用遠端電漿單元與該噴淋板之間。
- 如請求項6之基材處理設備,其中該等第二清潔氣體管線之各者具備一製程氣體管線,以通過該噴淋板供應一製程氣體至該反應室。
- 如請求項7之基材處理設備,其中該閥之各者係經組態以在供應該製程氣體至該反應室之時閉合。
- 一種基材處理設備,其包含: 複數個反應室; 一共用遠端電漿單元; 複數個第一清潔氣體管線,其等經組態以將該共用遠端電漿單元流體耦接至該等反應室;及 一清潔氣體源,其提供該共用遠端電漿單元一清潔氣體; 其中該等第一清潔氣體管線共用一閥,且該等第一清潔氣體管線之各者經連接至該反應室之一側壁。
- 如請求項9之基材處理設備,其進一步包含一基座,該基座經定位在該反應室內以經構成及配置以支撐一基材。
- 如請求項10之基材處理設備,其進一步包含一噴淋板,該噴淋板經構成及配置以面向該基座。
- 如請求項11之基材處理設備,其進一步包含複數個第二清潔管線,該等第二清潔管線之各者經設置在該共用遠端電漿單元與該噴淋板之間。
- 如請求項12之基材處理設備,其中該等第二清潔氣體管線之各者具備一製程氣體管線,以通過該噴淋板供應一製程氣體至該反應室。
- 如請求項13之基材處理設備,其中該閥係經組態以在供應該製程氣體至該反應室之時閉合。
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