JPH0439791B2 - - Google Patents

Info

Publication number
JPH0439791B2
JPH0439791B2 JP59111396A JP11139684A JPH0439791B2 JP H0439791 B2 JPH0439791 B2 JP H0439791B2 JP 59111396 A JP59111396 A JP 59111396A JP 11139684 A JP11139684 A JP 11139684A JP H0439791 B2 JPH0439791 B2 JP H0439791B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
hgcdte
high concentration
cadmium telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59111396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60254771A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59111396A priority Critical patent/JPS60254771A/ja
Publication of JPS60254771A publication Critical patent/JPS60254771A/ja
Publication of JPH0439791B2 publication Critical patent/JPH0439791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
JP59111396A 1984-05-31 1984-05-31 半導体装置の製造方法 Granted JPS60254771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111396A JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111396A JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60254771A JPS60254771A (ja) 1985-12-16
JPH0439791B2 true JPH0439791B2 (enrdf_load_stackoverflow) 1992-06-30

Family

ID=14560089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111396A Granted JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60254771A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60254771A (ja) 1985-12-16

Similar Documents

Publication Publication Date Title
US4231149A (en) Narrow band-gap semiconductor CCD imaging device and method of fabrication
JP3608858B2 (ja) 赤外線検出器及びその製造方法
CN107068784B (zh) 一种横向结构锗/硅异质结雪崩光电探测器及其制备方法
JPH07162024A (ja) 半導体紫外線センサ
JP2002118790A (ja) ゲーテッドフォトダイオードを有する固体イメージャ及びその製造方法
JPH05267695A (ja) 赤外線撮像装置
US4377904A (en) Method of fabricating a narrow band-gap semiconductor CCD imaging device
JPH0439791B2 (enrdf_load_stackoverflow)
US3986904A (en) Process for fabricating planar scr structure
JPS5931865B2 (ja) 半導体装置
KR19980027682A (ko) 반도체 기판 및 그 제조 방법
JPH0314228B2 (enrdf_load_stackoverflow)
JPH0454969B2 (enrdf_load_stackoverflow)
JPS6312162A (ja) 半導体装置およびその製造方法
JPS6057964A (ja) 固体光電変換装置およびその製造方法
JPS5828731B2 (ja) ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ
JPH063809B2 (ja) 半導体装置
JPS598350A (ja) 半導体集積回路装置
JPH0983010A (ja) 赤外線受光装置およびその製造方法
JP2757872B2 (ja) 半導体装置及びその製造方法
JPS63271979A (ja) 半導体装置の製造方法
JPH10163517A (ja) 半導体装置及びその製造方法
JP2828126B2 (ja) 半導体装置及びその製造方法
KR930000294B1 (ko) 고성능 횡방향 바이폴라 트랜지스터(bipolar transistor)의 제조방법
JPH02177454A (ja) 誘電体分離基板、誘電体分離型半導体装置およびその製造方法