JPS60254771A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60254771A
JPS60254771A JP59111396A JP11139684A JPS60254771A JP S60254771 A JPS60254771 A JP S60254771A JP 59111396 A JP59111396 A JP 59111396A JP 11139684 A JP11139684 A JP 11139684A JP S60254771 A JPS60254771 A JP S60254771A
Authority
JP
Japan
Prior art keywords
layer
substrate
hgcdte
conductivity type
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59111396A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439791B2 (enrdf_load_stackoverflow
Inventor
Kenji Maruyama
研二 丸山
Toshiro Yamamoto
俊郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59111396A priority Critical patent/JPS60254771A/ja
Publication of JPS60254771A publication Critical patent/JPS60254771A/ja
Publication of JPH0439791B2 publication Critical patent/JPH0439791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
JP59111396A 1984-05-31 1984-05-31 半導体装置の製造方法 Granted JPS60254771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111396A JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111396A JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60254771A true JPS60254771A (ja) 1985-12-16
JPH0439791B2 JPH0439791B2 (enrdf_load_stackoverflow) 1992-06-30

Family

ID=14560089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111396A Granted JPS60254771A (ja) 1984-05-31 1984-05-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60254771A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0439791B2 (enrdf_load_stackoverflow) 1992-06-30

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