JPH0439226B2 - - Google Patents
Info
- Publication number
- JPH0439226B2 JPH0439226B2 JP10993286A JP10993286A JPH0439226B2 JP H0439226 B2 JPH0439226 B2 JP H0439226B2 JP 10993286 A JP10993286 A JP 10993286A JP 10993286 A JP10993286 A JP 10993286A JP H0439226 B2 JPH0439226 B2 JP H0439226B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- etching
- thickness
- scribe line
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10993286A JPS62265727A (ja) | 1986-05-14 | 1986-05-14 | Ｉｃ部品の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10993286A JPS62265727A (ja) | 1986-05-14 | 1986-05-14 | Ｉｃ部品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62265727A JPS62265727A (ja) | 1987-11-18 |
| JPH0439226B2 true JPH0439226B2 (enrdf_load_stackoverflow) | 1992-06-26 |
Family
ID=14522763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10993286A Granted JPS62265727A (ja) | 1986-05-14 | 1986-05-14 | Ｉｃ部品の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62265727A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622899A (en) * | 1996-04-22 | 1997-04-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of fabricating semiconductor chips separated by scribe lines used for endpoint detection |
-
1986
- 1986-05-14 JP JP10993286A patent/JPS62265727A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62265727A (ja) | 1987-11-18 |
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