JPH0437605B2 - - Google Patents
Info
- Publication number
- JPH0437605B2 JPH0437605B2 JP58045455A JP4545583A JPH0437605B2 JP H0437605 B2 JPH0437605 B2 JP H0437605B2 JP 58045455 A JP58045455 A JP 58045455A JP 4545583 A JP4545583 A JP 4545583A JP H0437605 B2 JPH0437605 B2 JP H0437605B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- mos transistor
- gate
- potential
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000008188 pellet Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58045455A JPS59171318A (ja) | 1983-03-18 | 1983-03-18 | プログラム可能スイッチ回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58045455A JPS59171318A (ja) | 1983-03-18 | 1983-03-18 | プログラム可能スイッチ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59171318A JPS59171318A (ja) | 1984-09-27 |
JPH0437605B2 true JPH0437605B2 (enrdf_load_stackoverflow) | 1992-06-19 |
Family
ID=12719819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58045455A Granted JPS59171318A (ja) | 1983-03-18 | 1983-03-18 | プログラム可能スイッチ回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59171318A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6113400U (ja) * | 1984-06-23 | 1986-01-25 | 三菱電機株式会社 | 半導体プログラム回路 |
JP2701836B2 (ja) * | 1985-03-14 | 1998-01-21 | オムロン株式会社 | 回路折抗値調整方法 |
KR920010347B1 (ko) * | 1989-12-30 | 1992-11-27 | 삼성전자주식회사 | 분할된 워드라인을 가지는 메모리장치의 리던던시 구조 |
US5319592A (en) * | 1992-11-25 | 1994-06-07 | Fujitsu Limited | Fuse-programming circuit |
JPH07142970A (ja) * | 1993-11-19 | 1995-06-02 | Nec Corp | 入力回路 |
-
1983
- 1983-03-18 JP JP58045455A patent/JPS59171318A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59171318A (ja) | 1984-09-27 |
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