JPH0437605B2 - - Google Patents

Info

Publication number
JPH0437605B2
JPH0437605B2 JP58045455A JP4545583A JPH0437605B2 JP H0437605 B2 JPH0437605 B2 JP H0437605B2 JP 58045455 A JP58045455 A JP 58045455A JP 4545583 A JP4545583 A JP 4545583A JP H0437605 B2 JPH0437605 B2 JP H0437605B2
Authority
JP
Japan
Prior art keywords
circuit
mos transistor
gate
potential
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58045455A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59171318A (ja
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58045455A priority Critical patent/JPS59171318A/ja
Publication of JPS59171318A publication Critical patent/JPS59171318A/ja
Publication of JPH0437605B2 publication Critical patent/JPH0437605B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Electronic Switches (AREA)
JP58045455A 1983-03-18 1983-03-18 プログラム可能スイッチ回路 Granted JPS59171318A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58045455A JPS59171318A (ja) 1983-03-18 1983-03-18 プログラム可能スイッチ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58045455A JPS59171318A (ja) 1983-03-18 1983-03-18 プログラム可能スイッチ回路

Publications (2)

Publication Number Publication Date
JPS59171318A JPS59171318A (ja) 1984-09-27
JPH0437605B2 true JPH0437605B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=12719819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045455A Granted JPS59171318A (ja) 1983-03-18 1983-03-18 プログラム可能スイッチ回路

Country Status (1)

Country Link
JP (1) JPS59171318A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113400U (ja) * 1984-06-23 1986-01-25 三菱電機株式会社 半導体プログラム回路
JP2701836B2 (ja) * 1985-03-14 1998-01-21 オムロン株式会社 回路折抗値調整方法
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
US5319592A (en) * 1992-11-25 1994-06-07 Fujitsu Limited Fuse-programming circuit
JPH07142970A (ja) * 1993-11-19 1995-06-02 Nec Corp 入力回路

Also Published As

Publication number Publication date
JPS59171318A (ja) 1984-09-27

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