JPH0431192B2 - - Google Patents

Info

Publication number
JPH0431192B2
JPH0431192B2 JP61045362A JP4536286A JPH0431192B2 JP H0431192 B2 JPH0431192 B2 JP H0431192B2 JP 61045362 A JP61045362 A JP 61045362A JP 4536286 A JP4536286 A JP 4536286A JP H0431192 B2 JPH0431192 B2 JP H0431192B2
Authority
JP
Japan
Prior art keywords
layer
base
emitter
superlattice
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61045362A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62203371A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP61045362A priority Critical patent/JPS62203371A/ja
Publication of JPS62203371A publication Critical patent/JPS62203371A/ja
Publication of JPH0431192B2 publication Critical patent/JPH0431192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP61045362A 1986-03-04 1986-03-04 高速半導体装置 Granted JPS62203371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61045362A JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61045362A JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Publications (2)

Publication Number Publication Date
JPS62203371A JPS62203371A (ja) 1987-09-08
JPH0431192B2 true JPH0431192B2 (enExample) 1992-05-25

Family

ID=12717164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61045362A Granted JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Country Status (1)

Country Link
JP (1) JPS62203371A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299072A (ja) * 1986-06-18 1987-12-26 Sanyo Electric Co Ltd ホツトエレクトロントランジスタ
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS62203371A (ja) 1987-09-08

Similar Documents

Publication Publication Date Title
JPH0611056B2 (ja) 高速半導体装置
JP3922466B2 (ja) 半導体論理素子
EP0159273A2 (en) Semiconductor device
JPH07120807B2 (ja) 定電流半導体装置
JPS6313355B2 (enExample)
JPS583277A (ja) 半導体共鳴トンネル３極装置
JPH0732250B2 (ja) 半導体デバイス
EP0482726B1 (en) Heterojunction field-effect transistor
JPH01186683A (ja) 半導体装置
JPH0665217B2 (ja) トランジスタ
US4860064A (en) Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate
JPH0431192B2 (enExample)
EP0186301B1 (en) High-speed semiconductor device
US4910562A (en) Field induced base transistor
JP2936871B2 (ja) トンネリング電界効果トランジスタ
JP3119207B2 (ja) 共鳴トンネルトランジスタおよびその製造方法
US4994882A (en) Semiconductor device and method
JPH01214164A (ja) 共鳴トンネリングトランジスタ
JP2582643B2 (ja) 超伝導トランジスタ
JPS61144881A (ja) 半導体装置
JP2592302B2 (ja) 量子効果半導体装置
JP2771214B2 (ja) 半導体装置
JPH0377375A (ja) 高速半導体装置
JPH0638494B2 (ja) 化合物半導体装置
JP3138824B2 (ja) 共鳴トンネル半導体装置