JPH0431189B2 - - Google Patents

Info

Publication number
JPH0431189B2
JPH0431189B2 JP61002214A JP221486A JPH0431189B2 JP H0431189 B2 JPH0431189 B2 JP H0431189B2 JP 61002214 A JP61002214 A JP 61002214A JP 221486 A JP221486 A JP 221486A JP H0431189 B2 JPH0431189 B2 JP H0431189B2
Authority
JP
Japan
Prior art keywords
vertical transistor
region
layer
collector
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61002214A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61263150A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP61002214A priority Critical patent/JPS61263150A/ja
Publication of JPS61263150A publication Critical patent/JPS61263150A/ja
Publication of JPH0431189B2 publication Critical patent/JPH0431189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP61002214A 1986-01-10 1986-01-10 半導体装置の製造方法 Granted JPS61263150A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61002214A JPS61263150A (ja) 1986-01-10 1986-01-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61002214A JPS61263150A (ja) 1986-01-10 1986-01-10 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3669777A Division JPS53121587A (en) 1977-03-31 1977-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS61263150A JPS61263150A (ja) 1986-11-21
JPH0431189B2 true JPH0431189B2 (enExample) 1992-05-25

Family

ID=11523100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61002214A Granted JPS61263150A (ja) 1986-01-10 1986-01-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61263150A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06105762B2 (ja) * 1989-04-20 1994-12-21 三洋電機株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
JPS52104083A (en) * 1976-02-27 1977-09-01 Toshiba Corp Semiconductor unit
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit

Also Published As

Publication number Publication date
JPS61263150A (ja) 1986-11-21

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