JPH0413864B2 - - Google Patents

Info

Publication number
JPH0413864B2
JPH0413864B2 JP61002212A JP221286A JPH0413864B2 JP H0413864 B2 JPH0413864 B2 JP H0413864B2 JP 61002212 A JP61002212 A JP 61002212A JP 221286 A JP221286 A JP 221286A JP H0413864 B2 JPH0413864 B2 JP H0413864B2
Authority
JP
Japan
Prior art keywords
region
vertical transistor
layer
collector
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61002212A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61263148A (ja
Inventor
Hiroshi Iwasaki
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61002212A priority Critical patent/JPS61263148A/ja
Publication of JPS61263148A publication Critical patent/JPS61263148A/ja
Publication of JPH0413864B2 publication Critical patent/JPH0413864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP61002212A 1986-01-10 1986-01-10 半導体装置 Granted JPS61263148A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61002212A JPS61263148A (ja) 1986-01-10 1986-01-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61002212A JPS61263148A (ja) 1986-01-10 1986-01-10 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3669777A Division JPS53121587A (en) 1977-03-31 1977-03-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS61263148A JPS61263148A (ja) 1986-11-21
JPH0413864B2 true JPH0413864B2 (enExample) 1992-03-11

Family

ID=11523041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61002212A Granted JPS61263148A (ja) 1986-01-10 1986-01-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS61263148A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516488A (enExample) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS52185A (en) * 1975-06-23 1977-01-05 Hitachi Ltd Semiconductor

Also Published As

Publication number Publication date
JPS61263148A (ja) 1986-11-21

Similar Documents

Publication Publication Date Title
US4546539A (en) I2 L Structure and fabrication process compatible with high voltage bipolar transistors
GB1533156A (en) Semiconductor integrated circuits
US4106049A (en) Semiconductor device
JPH0582986B2 (enExample)
JPH0413864B2 (enExample)
JPH0431189B2 (enExample)
JPS61263149A (ja) 半導体装置の製造方法
JPH0447463B2 (enExample)
JPS6360550B2 (enExample)
JPH0258865A (ja) 半導体装置
JP3104276B2 (ja) 半導体装置の製造方法
KR900008818B1 (ko) 쌍극성 집적회로소자 제조방법
JPS61134036A (ja) 半導体集積回路の製造方法
JPH0824122B2 (ja) 半導体装置の製造方法
JP2747095B2 (ja) 半導体装置の製造方法
JPH0425711B2 (enExample)
JP2927843B2 (ja) 半導体集積回路
JP3128818B2 (ja) 半導体集積回路
JP2783888B2 (ja) 半導体装置およびその製造方法
JPH0581191B2 (enExample)
JPH0436578B2 (enExample)
JPH05335329A (ja) 半導体装置及びその製造方法
JPH01246873A (ja) 半導体装置
JPH061814B2 (ja) 半導体装置
JPS6155781B2 (enExample)