JPS61263150A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61263150A JPS61263150A JP61002214A JP221486A JPS61263150A JP S61263150 A JPS61263150 A JP S61263150A JP 61002214 A JP61002214 A JP 61002214A JP 221486 A JP221486 A JP 221486A JP S61263150 A JPS61263150 A JP S61263150A
- Authority
- JP
- Japan
- Prior art keywords
- region
- vertical transistor
- layer
- collector
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61002214A JPS61263150A (ja) | 1986-01-10 | 1986-01-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61002214A JPS61263150A (ja) | 1986-01-10 | 1986-01-10 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3669777A Division JPS53121587A (en) | 1977-03-31 | 1977-03-31 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61263150A true JPS61263150A (ja) | 1986-11-21 |
| JPH0431189B2 JPH0431189B2 (enExample) | 1992-05-25 |
Family
ID=11523100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61002214A Granted JPS61263150A (ja) | 1986-01-10 | 1986-01-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61263150A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278866A (ja) * | 1989-04-20 | 1990-11-15 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
| JPS52104083A (en) * | 1976-02-27 | 1977-09-01 | Toshiba Corp | Semiconductor unit |
| JPS52151575A (en) * | 1976-04-12 | 1977-12-16 | Texas Instruments Inc | Semiconductor i2l circuit and method of producing same |
-
1986
- 1986-01-10 JP JP61002214A patent/JPS61263150A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
| JPS52104083A (en) * | 1976-02-27 | 1977-09-01 | Toshiba Corp | Semiconductor unit |
| JPS52151575A (en) * | 1976-04-12 | 1977-12-16 | Texas Instruments Inc | Semiconductor i2l circuit and method of producing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278866A (ja) * | 1989-04-20 | 1990-11-15 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0431189B2 (enExample) | 1992-05-25 |
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