JPH0429052B2 - - Google Patents
Info
- Publication number
- JPH0429052B2 JPH0429052B2 JP11730289A JP11730289A JPH0429052B2 JP H0429052 B2 JPH0429052 B2 JP H0429052B2 JP 11730289 A JP11730289 A JP 11730289A JP 11730289 A JP11730289 A JP 11730289A JP H0429052 B2 JPH0429052 B2 JP H0429052B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- sample
- electrode
- less
- spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 230000008439 repair process Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 43
- 150000002500 ions Chemical class 0.000 description 21
- 238000007689 inspection Methods 0.000 description 19
- 238000012937 correction Methods 0.000 description 12
- 229910001338 liquidmetal Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 206010027146 Melanoderma Diseases 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1117302A JPH0260A (ja) | 1989-05-12 | 1989-05-12 | イオンビーム加工装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1117302A JPH0260A (ja) | 1989-05-12 | 1989-05-12 | イオンビーム加工装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57078165A Division JPS58196020A (ja) | 1982-05-12 | 1982-05-12 | マスクの欠陥検査・修正方法およびその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0260A JPH0260A (ja) | 1990-01-05 |
JPH0429052B2 true JPH0429052B2 (de) | 1992-05-15 |
Family
ID=14708391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1117302A Granted JPH0260A (ja) | 1989-05-12 | 1989-05-12 | イオンビーム加工装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0260A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69620723T2 (de) | 1995-12-22 | 2002-12-05 | Mitsubishi Chemical Corp., Tokio/Tokyo | Fotopolymerisierbare Zusammensetzung für einen Farbfilter, Farbfilter und Flüssigkristallanzeigevorrichtung |
JP4200626B2 (ja) | 2000-02-28 | 2008-12-24 | 株式会社デンソー | 絶縁ゲート型パワー素子の製造方法 |
JP6292569B2 (ja) | 2013-12-04 | 2018-03-14 | 協同油脂株式会社 | 等速ジョイント用グリース組成物及びそのグリース組成物を封入した等速ジョイント |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568632A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Manufacture of photomask |
JPS55150225A (en) * | 1979-05-11 | 1980-11-22 | Hitachi Ltd | Method of correcting white spot fault of photomask |
-
1989
- 1989-05-12 JP JP1117302A patent/JPH0260A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568632A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Manufacture of photomask |
JPS55150225A (en) * | 1979-05-11 | 1980-11-22 | Hitachi Ltd | Method of correcting white spot fault of photomask |
Also Published As
Publication number | Publication date |
---|---|
JPH0260A (ja) | 1990-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7276693B2 (en) | Inspection method and apparatus using charged particle beam | |
EP0075949B1 (de) | Ionenstrahl-Bearbeitungsapparat und Methode zur Korrektur von Maskenfehlern | |
JP3441955B2 (ja) | 投射方式の荷電粒子顕微鏡および基板検査システム | |
JP4828162B2 (ja) | 電子顕微鏡応用装置および試料検査方法 | |
JPS59168652A (ja) | 素子修正方法及びその装置 | |
JP2003215067A (ja) | 荷電粒子ビームを用いた自動基板検査の装置及び方法 | |
USRE33193E (en) | Ion beam processing apparatus and method of correcting mask defects | |
JPH0428097B2 (de) | ||
US6512227B2 (en) | Method and apparatus for inspecting patterns of a semiconductor device with an electron beam | |
JPH0429052B2 (de) | ||
JP2590703B2 (ja) | イオンビーム加工装置 | |
JP3952997B2 (ja) | 半導体製造装置、および半導体検査装置 | |
JP4759146B2 (ja) | 二重ビームを備えた二次電子放射顕微鏡のための装置および方法 | |
JP2672808B2 (ja) | イオンビーム加工装置 | |
US20220299456A1 (en) | Inspection apparatus | |
JP2694264B2 (ja) | 集束イオンビーム装置 | |
JP2002251974A (ja) | 電子線式外観検査装置 | |
US7135675B1 (en) | Multi-pixel and multi-column electron emission inspector | |
JPS63170940A (ja) | Ic素子の修正方法 | |
JP2000223542A (ja) | 電子ビ―ムを用いた検査方法及び検査装置 | |
JPH1074808A (ja) | 荷電粒子線を用いた理化学装置,半導体製造及び検査装置 | |
JP2522992B2 (ja) | 集束イオンビ―ム装置 | |
JP2000030648A (ja) | 電子線装置およびその使用方法 | |
JPH0678897B2 (ja) | パタ−ン検査装置 | |
JP2020020710A (ja) | 検査装置 |